Overview
The IPB072N15N3GATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, part of their OptiMOS™ series. This device is notable for its significant reduction in RDS(on) by 40% and an improvement in the figure of merit (FOM) by 45% compared to its competitors. This enhancement allows for more efficient designs, such as transitioning from leaded packages to surface-mount devices (SMD) or replacing multiple older parts with a single OptiMOS™ component.
Key Specifications
| Parameter | Symbol | Conditions | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VBR(DSS) | VGS = 0 V, ID = 250 µA | V | 150 | - | - |
| Drain-Source On Resistance | RDS(on) | VGS = 10 V, ID = 50 A | mΩ | - | 2.1 | - |
| Gate Threshold Voltage | VGS(th) | VDS = 10 V, ID = 250 µA | V | 2.5 | 3.5 | 4.5 |
| Continuous Drain Current | ID | TC = 25°C | A | - | 100 | - |
| Package Type | - | - | - | D2PAK (TO-263-3) | - | - |
Key Features
- Excellent Switching Performance: Optimized for high-speed switching applications.
- World’s Lowest RDS(on): Achieves a significant reduction in on-resistance.
- Very Low Qg and Qgd: Minimizes gate charge and reduces switching losses.
- Excellent Gate Charge x RDS(on) Product (FOM): Enhances overall efficiency and performance.
- RoHS Compliant and Halogen-Free: Environmentally friendly and compliant with regulatory standards.
- MSL1 Rated: Ensures reliability and ease of handling.
- Increased Efficiency and Power Density: Reduces the need for paralleling and minimizes board space consumption.
- Easy-to-Design Products: Simplifies the design process for various applications.
Applications
- Synchronous Rectification for AC-DC SMPS
- Motor Control for 48 V – 80 V Systems (e.g., domestic vehicles, power tools, trucks)
- Isolated DC-DC Converters (telecom and datacom systems)
- Or-ing Switches and Circuit Breakers in 48 V Systems
- Class D Audio Amplifiers
- Uninterruptable Power Supplies (UPS)
Q & A
- What is the drain-source breakdown voltage of the IPB072N15N3GATMA1?
The drain-source breakdown voltage is 150 V.
- What is the typical RDS(on) of this MOSFET?
The typical RDS(on) is 2.1 mΩ at VGS = 10 V and ID = 50 A.
- What is the gate threshold voltage range for this device?
The gate threshold voltage range is from 2.5 V to 4.5 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current rating is 100 A.
- What package type is the IPB072N15N3GATMA1 available in?
The device is available in the D2PAK (TO-263-3) package.
- Is the IPB072N15N3GATMA1 RoHS compliant and halogen-free?
Yes, it is RoHS compliant and halogen-free.
- What are some of the key applications for this MOSFET?
Key applications include synchronous rectification for AC-DC SMPS, motor control for 48 V – 80 V systems, isolated DC-DC converters, or-ing switches and circuit breakers in 48 V systems, Class D audio amplifiers, and uninterruptable power supplies (UPS).
- How does the IPB072N15N3GATMA1 improve design efficiency?
It improves design efficiency by reducing the need for paralleling, minimizing board space consumption, and simplifying the design process.
- What are the benefits of using the IPB072N15N3GATMA1 in terms of environmental impact?
The device is environmentally friendly due to its RoHS compliance and halogen-free construction.
- How does the IPB072N15N3GATMA1 enhance power density?
It enhances power density by reducing the on-resistance and minimizing the need for paralleling, thus allowing for more compact designs.
