MMBF170-7
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Diodes Incorporated MMBF170-7

Manufacturer No:
MMBF170-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 500MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The MMBF170 is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications and is fully compliant with RoHS and other environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage VDGR 60 V
Gate-Source Voltage (Continuous) VGSS ±20 V
Continuous Drain Current ID 200 mA
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 800 mA
Gate Threshold Voltage VGS(th) 0.8 - 3.0 V
Static Drain-Source On-Resistance RDS(ON) 2.2 - 5.3 Ω
Input Capacitance Ciss 22 - 40 pF
Output Capacitance Coss 11 - 30 pF
Reverse Transfer Capacitance Crss 2 - 5 pF
Turn-On Delay Time tD(on) 10 ns
Turn-Off Delay Time tD(off) 10 ns
Package SOT23
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Key Features

  • Low On-Resistance: Minimized on-state resistance for high-efficiency power management.
  • Low Gate Threshold Voltage: Ensures easy switching and control.
  • Low Input Capacitance: Reduces the impact on high-frequency operations.
  • Fast Switching Speed: Optimized for fast turn-on and turn-off times.
  • Low Input/Output Leakage: Minimizes power loss during operation.
  • Totally Lead-Free & Fully RoHS Compliant: Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3).
  • Halogen and Antimony Free: Defined as “Green” devices with <900ppm bromine, <900ppm chlorine, and <1000ppm antimony compounds.
  • Automotive-Compliant Version Available: MMBF170Q for automotive applications.
  • High Reliability: Qualified to JEDEC standards for high reliability.

Applications

  • Motor Controls: Suitable for small servo motor control and other motor control applications.
  • Power Management Functions: Ideal for high-efficiency power-management applications.
  • Gate Drivers: Can be used as power MOSFET gate drivers.
  • Switching Applications: Applicable in various low voltage, low current switching scenarios.

Q & A

  1. What is the maximum drain-source voltage of the MMBF170?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current rating of the MMBF170?

    The continuous drain current (ID) is 200mA.

  3. What is the gate threshold voltage range of the MMBF170?

    The gate threshold voltage (VGS(th)) ranges from 0.8V to 3.0V.

  4. What is the typical on-resistance of the MMBF170?

    The static drain-source on-resistance (RDS(ON)) is typically between 2.2Ω and 5.3Ω.

  5. Is the MMBF170 RoHS compliant?

    Yes, the MMBF170 is fully RoHS compliant and lead-free.

  6. What is the operating temperature range of the MMBF170?

    The operating and storage temperature range is -55°C to +150°C.

  7. What are the typical applications of the MMBF170?

    Typical applications include motor controls, power management functions, gate drivers, and other low voltage, low current switching applications.

  8. What is the package type of the MMBF170?

    The MMBF170 comes in a SOT23 package.

  9. Is there an automotive-compliant version of the MMBF170?

    Yes, an automotive-compliant version is available under the part number MMBF170Q.

  10. What are the key benefits of the MMBF170's high cell density DMOS technology?

    The high cell density DMOS technology provides low on-state resistance, rugged and reliable performance, and fast switching speeds.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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