Overview
The 2N7002-13-F-79 is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This component is designed to offer high performance and efficiency, making it suitable for a wide range of electronic applications. With its low on-state resistance, low gate threshold voltage, and fast switching speed, the 2N7002-13-F-79 is ideal for high-efficiency power management and other demanding applications. The MOSFET is packaged in a small surface-mount SOT-23-3 package, which is fully RoHS compliant and lead-free, ensuring environmental sustainability and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 170 mA (Ta), 210 mA (Vgs = 10V) | mA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | V |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V | Ohm |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 0.23 nC @ 4.5 V | nC |
| Vgs (Max) | ±20V | V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | pF |
| Power Dissipation (Max) | 370 mW (Ta) | mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | °C |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Key Features
- Low On-Resistance: The 2N7002-13-F-79 features a low on-state resistance, which enhances its efficiency in power management applications.
- Low Gate Threshold Voltage: With a gate threshold voltage of 1.0 to 2.5V, this MOSFET is easy to drive and control.
- Low Input Capacitance: The low input capacitance of 50 pF at 25V reduces the switching time and improves overall performance.
- Fast Switching Speed: The fast switching speed makes this MOSFET suitable for high-frequency applications.
- Small Surface-Mount Package: The SOT-23-3 package is compact and ideal for space-constrained designs.
- RoHS Compliant and Lead-Free: The component is fully RoHS compliant and lead-free, ensuring environmental sustainability and compliance with regulatory standards.
Applications
- Motor Control: The 2N7002-13-F-79 is suitable for motor control applications due to its high efficiency and fast switching capabilities.
- Power Management Functions: It is ideal for various power management functions, including voltage regulation and power switching.
- General Switching Applications: The MOSFET can be used in a variety of general switching applications where low on-resistance and fast switching are required).
Q & A
- What is the drain to source voltage (Vdss) of the 2N7002-13-F-79?
The drain to source voltage (Vdss) is 60V).
- What is the continuous drain current (Id) at 25°C?
The continuous drain current (Id) at 25°C is 170 mA (Ta) and up to 210 mA with Vgs = 10V).
- What is the gate threshold voltage (Vgs(th))?
The gate threshold voltage (Vgs(th)) is 1.0 to 2.5V).
- What is the maximum power dissipation?
The maximum power dissipation is 370 mW (Ta)).
- What is the operating temperature range?
The operating temperature range is -55°C to 150°C (TJ)).
- Is the 2N7002-13-F-79 RoHS compliant?
Yes, the 2N7002-13-F-79 is fully RoHS compliant and lead-free).
- What is the package type of the 2N7002-13-F-79?
The package type is SOT-23-3).
- What are some typical applications of the 2N7002-13-F-79?
Typical applications include motor control, power management functions, and general switching applications).
- What is the input capacitance (Ciss) of the 2N7002-13-F-79?
The input capacitance (Ciss) is 50 pF at 25V).
- Is the 2N7002-13-F-79 suitable for high-frequency applications?
Yes, the 2N7002-13-F-79 is suitable for high-frequency applications due to its fast switching speed).
