Overview
The TPS1120DR, produced by Texas Instruments, is a dual p-channel enhancement-mode MOSFET designed for low-voltage portable battery-management systems. It is optimized using the Texas Instruments LinBiCMOS process for 3-V or 5-V power distribution. This device is particularly suited for applications where maximizing battery life is crucial. The TPS1120DR features two independent p-channel MOSFETs with a low on-resistance (rDS(on)) of 0.18 Ω at VGS = -10 V, making it ideal for high-side switching in battery-powered systems. The device also includes built-in ESD protection up to 2 kV per MIL-STD-883C, Method 3015, and is TTL and CMOS compatible.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Package Type | 8-SOIC (D) | |
| Number of Pins | 8 | |
| Operating Temperature Range | -40°C to 150°C | °C |
| Gate-to-Source Threshold Voltage (VGS(th)) | -1.5 V Max | V |
| On-Resistance (rDS(on)) | 0.18 Ω at VGS = -10 V | Ω |
| Continuous Drain Current (ID) | -1.17 A | A |
| Turn-On Delay Time | 4.5 ns | ns |
| Turn-Off Delay Time | 13 ns | ns |
| ESD Protection | Up to 2 kV per MIL-STD-883C, Method 3015 | |
| Gate Charge (Qg) | 5.45 nC at VGS = 10 V | nC |
| Power Dissipation | 840 mW | mW |
Key Features
- Low on-resistance (rDS(on)) of 0.18 Ω at VGS = -10 V
- 3-V compatible and requires no external VCC
- TTL and CMOS compatible inputs
- ESD protection up to 2 kV per MIL-STD-883C, Method 3015
- Logic level gate and enhancement mode operation
- Surface mount package with gold contact plating
Applications
The TPS1120DR is designed for use in various low-voltage portable battery-management systems, including:
- Notebook computers
- Personal digital assistants (PDAs)
- Cellular telephones
- Bar-code scanners
- PCMCIA cards
These applications benefit from the device's low on-resistance, ESD protection, and compatibility with TTL and CMOS logic levels.
Q & A
- What is the primary application of the TPS1120DR?
The TPS1120DR is primarily used in low-voltage portable battery-management systems to maximize battery life.
- What is the on-resistance (rDS(on)) of the TPS1120DR?
The on-resistance (rDS(on)) is 0.18 Ω at VGS = -10 V.
- Is the TPS1120DR compatible with TTL and CMOS logic levels?
- What level of ESD protection does the TPS1120DR offer?
The TPS1120DR offers ESD protection up to 2 kV per MIL-STD-883C, Method 3015.
- What is the operating temperature range of the TPS1120DR?
The operating temperature range is -40°C to 150°C.
- How many independent MOSFETs does the TPS1120DR contain?
The TPS1120DR contains two independent p-channel enhancement-mode MOSFETs.
- What is the gate-to-source threshold voltage (VGS(th)) of the TPS1120DR?
The gate-to-source threshold voltage (VGS(th)) is -1.5 V Max.
- What is the continuous drain current (ID) rating of the TPS1120DR?
The continuous drain current (ID) rating is -1.17 A.
- What is the turn-on and turn-off delay time of the TPS1120DR?
The turn-on delay time is 4.5 ns, and the turn-off delay time is 13 ns.
- Is the TPS1120DR RoHS compliant?
