Overview
The NTK3134NT1H is a single N-Channel MOSFET produced by onsemi, designed for various power switching and logic level applications. This device is notable for its compact SOT-723 package, which is 44% smaller and 38% thinner than the SC89 package, making it ideal for ultra-small portable electronics.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V |
| Gate-to-Source Voltage | VGS | ±8 | V |
| Continuous Drain Current (TA = 25°C) | ID | 890 mA | mA |
| Power Dissipation (TA = 25°C) | PD | 450 mW | mW |
| Pulsed Drain Current | IDM | 1.8 A | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to 150°C | °C |
| Lead Temperature for Soldering Purposes | TL | 260°C | °C |
| Gate Threshold Voltage | VGS(TH) | 0.45 to 1.2 V | V |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 890 mA) | RDS(on) | 0.20 Ω | Ω |
Key Features
- Low RDS(on): The NTK3134NT1H features a low drain-to-source on resistance, with values as low as 0.20 Ω at VGS = 4.5 V and ID = 890 mA.
- Compact Package: It is packaged in the SOT-723, which is significantly smaller and thinner than the SC89 package, making it suitable for space-constrained designs.
- Low Threshold Levels: The device operates at low logic level gate drive, with a gate threshold voltage ranging from 0.45 to 1.2 V.
- ESD Protection: The MOSFET includes built-in ESD protection.
- Environmental Compliance: The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- Load/Power Switching: Ideal for switching high current loads efficiently.
- Interface Switching: Suitable for interface switching applications where low on-resistance is crucial.
- Logic Level Shift: Can be used for logic level shifting due to its low threshold voltage.
- Battery Management: Used in battery management systems for ultra-small portable electronics.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTK3134NT1H MOSFET?
The maximum drain-to-source voltage (VDSS) is 20 V.
- What is the continuous drain current (ID) at TA = 25°C?
The continuous drain current (ID) at TA = 25°C is 890 mA.
- What is the typical drain-to-source on resistance (RDS(on)) at VGS = 4.5 V and ID = 890 mA?
The typical drain-to-source on resistance (RDS(on)) is 0.20 Ω.
- Is the NTK3134NT1H MOSFET RoHS compliant?
Yes, the NTK3134NT1H MOSFET is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the operating junction and storage temperatures for the NTK3134NT1H?
The operating junction and storage temperatures range from −55°C to 150°C.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What are some typical applications of the NTK3134NT1H MOSFET?
Typical applications include load/power switching, interface switching, logic level shift, and battery management for ultra-small portable electronics.
- What is the gate threshold voltage (VGS(TH)) range for the NTK3134NT1H?
The gate threshold voltage (VGS(TH)) ranges from 0.45 to 1.2 V.
- How does the on-resistance (RDS(on)) vary with different gate voltages?
The on-resistance (RDS(on)) varies with gate voltage, for example, 0.20 Ω at VGS = 4.5 V, 0.26 Ω at VGS = 2.5 V, and 0.56 Ω at VGS = 1.5 V.
- What is the pulsed drain current (IDM) rating for the NTK3134NT1H?
The pulsed drain current (IDM) rating is 1.8 A.
