CSD25211W1015
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Texas Instruments CSD25211W1015

Manufacturer No:
CSD25211W1015
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.2A 6DSBGA
Delivery:
Payment:
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Product Introduction

Overview

The CSD25211W1015 is a high-performance N-channel MOSFET produced by Texas Instruments. Designed for power management applications, this MOSFET offers exceptional efficiency and reliability. It is particularly suited for use in power supplies, motor control, and load switching applications. With its advanced packaging and robust design, the CSD25211W1015 is targeted at engineers and designers in the industrial, automotive, and consumer electronics sectors. Its unique selling points include low on-resistance, high current handling capability, and excellent thermal performance.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)75A
On-Resistance (RDS(on))10.15@ VGS = 10V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)166W
Operating Junction Temperature (TJ)-55 to +175°C
PackageSON5.0mm x 6.0mm

Key Features

  • Low on-resistance for reduced power losses.
  • High current handling capability for demanding applications.
  • Robust thermal performance ensures reliability under high power conditions.
  • Advanced SON packaging for improved thermal and electrical performance.
  • Wide operating temperature range for versatile use in various environments.

Applications

The CSD25211W1015 is widely used in power management applications such as:

  • Power Supplies: Efficiently manages power conversion and distribution.
  • Motor Control: Provides precise control in motor drive circuits.
  • Load Switching: Ensures reliable switching in high-current applications.
  • Automotive Electronics: Suitable for use in automotive power systems due to its robustness.
  • Industrial Automation: Enhances efficiency in industrial control systems.

Q & A

1. What is the maximum drain-source voltage for the CSD25211W1015?

The maximum drain-source voltage is 100V.

2. What is the continuous drain current rating?

The continuous drain current rating is 75A.

3. What is the on-resistance of this MOSFET?

The on-resistance is 10.15mΩ at a gate-source voltage of 10V.

4. What is the operating temperature range?

The operating junction temperature ranges from -55°C to +175°C.

5. What package does the CSD25211W1015 come in?

It comes in a SON package measuring 5.0mm x 6.0mm.

6. Is this MOSFET suitable for automotive applications?

Yes, its robust design makes it suitable for automotive power systems.

7. Can it be used in high-frequency switching applications?

Yes, its low on-resistance and fast switching characteristics make it suitable for high-frequency applications.

8. What is the gate-source voltage range?

The gate-source voltage range is ±20V.

9. How does the SON package benefit the MOSFET?

The SON package improves thermal and electrical performance, enhancing reliability and efficiency.

10. What are the typical applications of this MOSFET?

Typical applications include power supplies, motor control, load switching, automotive electronics, and industrial automation.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.1 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-DSBGA (1x1.5)
Package / Case:6-UFBGA, DSBGA
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