CSD17309Q3
  • Share:

Texas Instruments CSD17309Q3

Manufacturer No:
CSD17309Q3
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 20A/60A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17309Q3 is a high-performance N-channel MOSFET produced by Texas Instruments, designed for power management applications. This component is part of the NexFET™ Power MOSFET series, which is renowned for its efficiency and reliability. The CSD17309Q3 is particularly targeted at applications requiring high-speed switching and low power losses, making it ideal for use in portable electronics, power supplies, and motor control systems. Its compact DFN (Dual Flat No-Lead) package and advanced silicon technology ensure superior thermal performance and reduced on-resistance, setting it apart in the competitive MOSFET market.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)24A
On-Resistance (RDS(on))5.3At VGS = 4.5V
Gate-Source Voltage (VGS)±12V
Power Dissipation (PD)2.2W
Operating Temperature Range-55 to 150°C
PackageDFN-6 (3x3)

Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
  • High-Speed Switching: Optimized for applications requiring fast switching performance.
  • Compact DFN Package: Saves board space and improves thermal management.
  • Robust Thermal Performance: Ensures reliability under high-power conditions.
  • Wide Operating Temperature Range: Suitable for diverse environmental conditions.

Applications

The CSD17309Q3 is widely used in various applications, including:

  • Portable Electronics: Power management in smartphones, tablets, and laptops.
  • Power Supplies: DC-DC converters and voltage regulators.
  • Motor Control: Efficient driving of motors in consumer and industrial systems.
  • Automotive Electronics: Power distribution and control in automotive systems.

Q & A

1. What is the maximum drain-source voltage of the CSD17309Q3?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 5.3mΩ at VGS = 4.5V.

3. Can the CSD17309Q3 be used in high-temperature environments?

Yes, it operates reliably within a temperature range of -55°C to 150°C.

4. What package does the CSD17309Q3 use?

It is available in a DFN-6 (3x3) package.

5. Is this MOSFET suitable for motor control applications?

Yes, its high-speed switching and low on-resistance make it ideal for motor control.

6. What is the continuous drain current rating?

The continuous drain current (ID) is 24A.

7. How does the CSD17309Q3 improve efficiency in power supplies?

Its low on-resistance and high-speed switching reduce power losses, enhancing overall efficiency.

8. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±12V.

9. Can this MOSFET be used in automotive applications?

Yes, it is suitable for automotive power distribution and control systems.

10. What are the key advantages of the DFN package?

The DFN package offers compact size, improved thermal performance, and reduced board space requirements.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:5.4mOhm @ 18A, 8V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.22
313

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD17309Q3 CSD17304Q3 CSD17308Q3
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 60A (Tc) 15A (Ta), 56A (Tc) 14A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V 3V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 18A, 8V 7.5mOhm @ 17A, 8V 10.3mOhm @ 10A, 8V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.8V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 6.6 nC @ 4.5 V 5.1 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 15 V 955 pF @ 15 V 700 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.8W (Ta) 2.7W (Ta) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

ADS7822E/2K5
ADS7822E/2K5
Texas Instruments
IC ADC 12BIT SAR 8VSSOP
SN65LVDS32PW
SN65LVDS32PW
Texas Instruments
IC RECEIVER 0/4 16TSSOP
DS90LV048ATMTCX/NOPB
DS90LV048ATMTCX/NOPB
Texas Instruments
IC RECEIVER 0/4 16TSSOP
SN65LVDS32DG4
SN65LVDS32DG4
Texas Instruments
IC RECEIVER 0/4 16SOIC
SN65LVPE501RGER
SN65LVPE501RGER
Texas Instruments
IC REDRIVER PCIE 2CH 24VQFN
TLV2316IDR
TLV2316IDR
Texas Instruments
IC CMOS 2 CIRCUIT 8SOIC
LMV324Q3MT/NOPB
LMV324Q3MT/NOPB
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14TSSOP
TLC072IDGNR
TLC072IDGNR
Texas Instruments
IC OPAMP GP 2 CIRCUIT 8HVSSOP
LMV710M5X
LMV710M5X
Texas Instruments
IC OPAMP GP 1 CIRCUIT SOT23-5
CD4056BME4
CD4056BME4
Texas Instruments
IC DRVR 7 SEGMENT 1 DIGIT 16SOIC
LM5109ASD/NOPB
LM5109ASD/NOPB
Texas Instruments
IC GATE DRVR HALF-BRIDGE 8WSON
TPS22965QWDSGTQ1
TPS22965QWDSGTQ1
Texas Instruments
IC PWR SWITCH N-CHAN 1:1 8WSON