CSD17309Q3
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Texas Instruments CSD17309Q3

Manufacturer No:
CSD17309Q3
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 20A/60A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD17309Q3 is a high-performance N-channel MOSFET produced by Texas Instruments, designed for power management applications. This component is part of the NexFET™ Power MOSFET series, which is renowned for its efficiency and reliability. The CSD17309Q3 is particularly targeted at applications requiring high-speed switching and low power losses, making it ideal for use in portable electronics, power supplies, and motor control systems. Its compact DFN (Dual Flat No-Lead) package and advanced silicon technology ensure superior thermal performance and reduced on-resistance, setting it apart in the competitive MOSFET market.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)24A
On-Resistance (RDS(on))5.3At VGS = 4.5V
Gate-Source Voltage (VGS)±12V
Power Dissipation (PD)2.2W
Operating Temperature Range-55 to 150°C
PackageDFN-6 (3x3)

Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
  • High-Speed Switching: Optimized for applications requiring fast switching performance.
  • Compact DFN Package: Saves board space and improves thermal management.
  • Robust Thermal Performance: Ensures reliability under high-power conditions.
  • Wide Operating Temperature Range: Suitable for diverse environmental conditions.

Applications

The CSD17309Q3 is widely used in various applications, including:

  • Portable Electronics: Power management in smartphones, tablets, and laptops.
  • Power Supplies: DC-DC converters and voltage regulators.
  • Motor Control: Efficient driving of motors in consumer and industrial systems.
  • Automotive Electronics: Power distribution and control in automotive systems.

Q & A

1. What is the maximum drain-source voltage of the CSD17309Q3?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 5.3mΩ at VGS = 4.5V.

3. Can the CSD17309Q3 be used in high-temperature environments?

Yes, it operates reliably within a temperature range of -55°C to 150°C.

4. What package does the CSD17309Q3 use?

It is available in a DFN-6 (3x3) package.

5. Is this MOSFET suitable for motor control applications?

Yes, its high-speed switching and low on-resistance make it ideal for motor control.

6. What is the continuous drain current rating?

The continuous drain current (ID) is 24A.

7. How does the CSD17309Q3 improve efficiency in power supplies?

Its low on-resistance and high-speed switching reduce power losses, enhancing overall efficiency.

8. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±12V.

9. Can this MOSFET be used in automotive applications?

Yes, it is suitable for automotive power distribution and control systems.

10. What are the key advantages of the DFN package?

The DFN package offers compact size, improved thermal performance, and reduced board space requirements.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:5.4mOhm @ 18A, 8V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD17309Q3 CSD17304Q3 CSD17308Q3
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 60A (Tc) 15A (Ta), 56A (Tc) 14A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V 3V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 18A, 8V 7.5mOhm @ 17A, 8V 10.3mOhm @ 10A, 8V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.8V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 6.6 nC @ 4.5 V 5.1 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 15 V 955 pF @ 15 V 700 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.8W (Ta) 2.7W (Ta) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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