CSD17309Q3
  • Share:

Texas Instruments CSD17309Q3

Manufacturer No:
CSD17309Q3
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 20A/60A 8VSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CSD17309Q3 is a high-performance N-channel MOSFET produced by Texas Instruments, designed for power management applications. This component is part of the NexFET™ Power MOSFET series, which is renowned for its efficiency and reliability. The CSD17309Q3 is particularly targeted at applications requiring high-speed switching and low power losses, making it ideal for use in portable electronics, power supplies, and motor control systems. Its compact DFN (Dual Flat No-Lead) package and advanced silicon technology ensure superior thermal performance and reduced on-resistance, setting it apart in the competitive MOSFET market.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)30V
Continuous Drain Current (ID)24A
On-Resistance (RDS(on))5.3At VGS = 4.5V
Gate-Source Voltage (VGS)±12V
Power Dissipation (PD)2.2W
Operating Temperature Range-55 to 150°C
PackageDFN-6 (3x3)

Key Features

  • Low On-Resistance: Minimizes conduction losses, enhancing efficiency.
  • High-Speed Switching: Optimized for applications requiring fast switching performance.
  • Compact DFN Package: Saves board space and improves thermal management.
  • Robust Thermal Performance: Ensures reliability under high-power conditions.
  • Wide Operating Temperature Range: Suitable for diverse environmental conditions.

Applications

The CSD17309Q3 is widely used in various applications, including:

  • Portable Electronics: Power management in smartphones, tablets, and laptops.
  • Power Supplies: DC-DC converters and voltage regulators.
  • Motor Control: Efficient driving of motors in consumer and industrial systems.
  • Automotive Electronics: Power distribution and control in automotive systems.

Q & A

1. What is the maximum drain-source voltage of the CSD17309Q3?

The maximum drain-source voltage (VDS) is 30V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance (RDS(on)) is 5.3mΩ at VGS = 4.5V.

3. Can the CSD17309Q3 be used in high-temperature environments?

Yes, it operates reliably within a temperature range of -55°C to 150°C.

4. What package does the CSD17309Q3 use?

It is available in a DFN-6 (3x3) package.

5. Is this MOSFET suitable for motor control applications?

Yes, its high-speed switching and low on-resistance make it ideal for motor control.

6. What is the continuous drain current rating?

The continuous drain current (ID) is 24A.

7. How does the CSD17309Q3 improve efficiency in power supplies?

Its low on-resistance and high-speed switching reduce power losses, enhancing overall efficiency.

8. What is the gate-source voltage range?

The gate-source voltage (VGS) range is ±12V.

9. Can this MOSFET be used in automotive applications?

Yes, it is suitable for automotive power distribution and control systems.

10. What are the key advantages of the DFN package?

The DFN package offers compact size, improved thermal performance, and reduced board space requirements.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:5.4mOhm @ 18A, 8V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.22
313

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number CSD17309Q3 CSD17304Q3 CSD17308Q3
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 60A (Tc) 15A (Ta), 56A (Tc) 14A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V 3V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 18A, 8V 7.5mOhm @ 17A, 8V 10.3mOhm @ 10A, 8V
Vgs(th) (Max) @ Id 1.7V @ 250µA 1.8V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 6.6 nC @ 4.5 V 5.1 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 15 V 955 pF @ 15 V 700 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.8W (Ta) 2.7W (Ta) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

TLV2548QDWRG4
TLV2548QDWRG4
Texas Instruments
IC ADC 12BIT SAR 20SOIC
THVD2450DGKR
THVD2450DGKR
Texas Instruments
IC TRANSCEIVER HALF 1/1 8VSSOP
LM6134AIMX/NOPB
LM6134AIMX/NOPB
Texas Instruments
IC OPAMP GP 4 CIRCUIT 14SOIC
INA239AQDGSRQ1
INA239AQDGSRQ1
Texas Instruments
IC OPAMP GP 1 CIRCUIT 10VSSOP
SN74HC132DRE4
SN74HC132DRE4
Texas Instruments
IC GATE NAND 4CH 2-INP 14SOIC
SN74LS151NE4
SN74LS151NE4
Texas Instruments
SN74LS151 8-LINE TO 1-LINE DATA
UCC27284QDRQ1
UCC27284QDRQ1
Texas Instruments
AUTOMOTIVE 3-A, 120-V HALF BRIDG
UCD9081RHBT
UCD9081RHBT
Texas Instruments
IC SUPERVISOR 8 CHANNEL 32VQFN
LM4050BIM3X-2.5
LM4050BIM3X-2.5
Texas Instruments
IC VREF SHUNT 0.2% SOT23-3
LP2985IM5-3.1/NOPB
LP2985IM5-3.1/NOPB
Texas Instruments
IC REG LINEAR 3.1V 150MA SOT23-5
DLP4500AFQE
DLP4500AFQE
Texas Instruments
IC DIG MICROMIRROR DEVICE 80LCCC
CC2640R2LRHBR
CC2640R2LRHBR
Texas Instruments
SIMPLELINK BLUETOOTH 5.1 LOW ENE