CSD16340Q3T
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Texas Instruments CSD16340Q3T

Manufacturer No:
CSD16340Q3T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 60A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD16340Q3T is a high-performance, 40 V N-channel NexFET™ power MOSFET produced by Texas Instruments. Designed for applications requiring high efficiency and reliability, this component is part of the NexFET™ family, known for its low on-resistance and fast switching capabilities. It is widely used in power management and conversion systems, targeting industries such as automotive, industrial, and consumer electronics. Its compact package and robust performance make it a competitive choice for modern electronic designs.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40VMaximum voltage rating
Continuous Drain Current (ID)100AAt 25°C
On-Resistance (RDS(on))1.6At VGS = 10 V
Gate-Source Voltage (VGS)±20VMaximum rating
Power Dissipation (PD)250WAt 25°C
PackageSON 5x6-Compact surface-mount package

Key Features

  • Low on-resistance for reduced power losses.
  • Fast switching performance for high-frequency applications.
  • Robust thermal performance with a low thermal resistance.
  • Compact SON 5x6 package for space-constrained designs.
  • Designed for high reliability in demanding environments.

Applications

The CSD16340Q3T is ideal for a variety of applications, including:

  • Automotive: Used in electric vehicle power systems, motor control, and battery management.
  • Industrial: Suitable for power supplies, motor drives, and robotics.
  • Consumer Electronics: Applied in high-efficiency power converters and portable devices.
Its high efficiency and reliability make it a preferred choice for modern power management solutions.

Q & A

1. What is the maximum drain-source voltage of the CSD16340Q3T?

The maximum drain-source voltage is 40 V.

2. What is the continuous drain current rating?

The continuous drain current is rated at 100 A at 25°C.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 1.6 mΩ at a gate-source voltage of 10 V.

4. What package does the CSD16340Q3T use?

It comes in a SON 5x6 package.

5. What are the key applications of this component?

It is used in automotive, industrial, and consumer electronics applications.

6. What is the maximum gate-source voltage?

The maximum gate-source voltage is ±20 V.

7. How does the CSD16340Q3T perform in high-frequency applications?

It offers fast switching performance, making it suitable for high-frequency designs.

8. What is the power dissipation rating?

The power dissipation is rated at 250 W at 25°C.

9. Is this MOSFET suitable for automotive applications?

Yes, it is widely used in automotive power systems and motor control.

10. What makes the CSD16340Q3T competitive in the market?

Its low on-resistance, fast switching, and compact package make it a competitive choice for modern designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 12.5 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD16340Q3T CSD16340Q3
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 2.5V, 8V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 8V 4.5mOhm @ 20A, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 4.5 V 9.2 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 12.5 V 1350 pF @ 12.5 V
FET Feature - -
Power Dissipation (Max) 3W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN

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