CSD16340Q3
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Texas Instruments CSD16340Q3

Manufacturer No:
CSD16340Q3
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 21A/60A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD16340Q3 is a high-performance N-channel MOSFET field-effect transistor manufactured by Texas Instruments. It is designed in a compact VSON-CLIP-8 package, making it suitable for space-constrained applications. This component is widely used in industries such as automotive electronics, smart home devices, network communication, and medical electronics due to its robust performance and reliability. Its market positioning targets engineers and designers seeking efficient power management solutions with high current handling capabilities.

Key Specifications

ParameterValueUnitNotes
FET TypeN-channel--
Drain-Source Voltage (Vdss)25V-
Drain Current (Id)21A-
Drain-Source On-Resistance (RDS On)4.5-
Gate-Source Voltage (Vgs)See datasheetV-
Gate Charge (Qg)See datasheetnC-
Reverse Recovery TimeSee datasheetns-
Maximum Power Dissipation3W-
Configuration TypeSee datasheet--
Operating Temperature RangeSee datasheet°C-
Mounting TypeSurface Mount--

Key Features

  • High current handling capability with a drain current of 21A.
  • Low drain-source on-resistance (RDS On) of 4.5mΩ for efficient power management.
  • Compact VSON-CLIP-8 package ideal for space-constrained designs.
  • Robust performance in a wide range of applications, including automotive and industrial electronics.

Applications

The CSD16340Q3 is widely used in various fields, including:

  • Automotive Electronics: Power management in vehicle systems.
  • Smart Home Devices: Efficient power control in IoT devices.
  • Network Communication: High-performance switching in communication equipment.
  • Medical Electronics: Reliable power solutions in medical devices.

Q & A

1. What is the maximum drain-source voltage for the CSD16340Q3?

The maximum drain-source voltage (Vdss) is 25V.

2. What is the typical drain current (Id) rating?

The typical drain current rating is 21A.

3. What is the package type of the CSD16340Q3?

It is available in a VSON-CLIP-8 package.

4. What is the drain-source on-resistance (RDS On)?

The drain-source on-resistance is 4.5mΩ.

5. Is the CSD16340Q3 suitable for automotive applications?

Yes, it is widely used in automotive electronics for power management.

6. What is the maximum power dissipation of this MOSFET?

The maximum power dissipation is 3W.

7. Can this component be used in smart home devices?

Yes, it is ideal for efficient power control in IoT and smart home applications.

8. What is the operating temperature range?

Refer to the datasheet for the specific operating temperature range.

9. Is the CSD16340Q3 a surface-mount component?

Yes, it is designed for surface-mount applications.

10. Where can I find detailed specifications for the CSD16340Q3?

Detailed specifications are available in the official Texas Instruments datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 8V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 12.5 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD16340Q3 CSD16340Q3T
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V 2.5V, 8V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 8V 4.5mOhm @ 20A, 8V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 4.5 V 9.2 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 12.5 V 1350 pF @ 12.5 V
FET Feature - -
Power Dissipation (Max) 3W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN

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