STY145N65M5
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STMicroelectronics STY145N65M5

Manufacturer No:
STY145N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 138A MAX247
Delivery:
Payment:
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Product Introduction

Overview

The STY145N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications requiring high power and efficiency. The MOSFET is packaged in a Max247 through-hole package, ensuring robust and reliable performance in various industrial and power management applications.

Key Specifications

SpecificationValue
BrandSTMicroelectronics
Channel TypeN-Channel
Maximum Continuous Drain Current138 A
Maximum Drain Source Voltage650 V
SeriesMDmesh
Package TypeMax247
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance15 mΩ
Channel ModeEnhancement
Maximum Gate Threshold Voltage5 V
Minimum Gate Threshold Voltage3 V
Maximum Power Dissipation625 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-25 V, +25 V
Number of Elements per Chip1
Maximum Operating Temperature+150 °C
Length15.9 mm
Width5.3 mm
Height20.3 mm
Typical Gate Charge @ Vgs414 nC @ 10 V
Transistor MaterialSilicon (Si)
Forward Diode Voltage1.5 V

Key Features

  • Extremely low on-resistance (15 mΩ) for high efficiency and power handling.
  • High maximum continuous drain current (138 A) and maximum drain source voltage (650 V).
  • MDmesh™ M5 innovative vertical process technology combined with PowerMESH™ horizontal layout for enhanced performance.
  • Enhancement mode operation for precise control.
  • Through-hole Max247 package for robust and reliable mounting.
  • Rohs compliant and Ecopack2 certified for environmental sustainability.

Applications

The STY145N65M5 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management and control systems.
  • Renewable energy systems such as solar and wind power.
  • Automotive systems requiring high power and efficiency.

Q & A

  1. What is the maximum continuous drain current of the STY145N65M5?
    The maximum continuous drain current is 138 A.
  2. What is the maximum drain source voltage of the STY145N65M5?
    The maximum drain source voltage is 650 V.
  3. What is the on-resistance of the STY145N65M5?
    The on-resistance is 15 mΩ.
  4. What is the maximum operating temperature of the STY145N65M5?
    The maximum operating temperature is +150 °C.
  5. Is the STY145N65M5 RoHS compliant?
    Yes, the STY145N65M5 is RoHS compliant and Ecopack2 certified.
  6. What is the package type of the STY145N65M5?
    The package type is Max247 through-hole.
  7. What is the typical gate charge at Vgs=10V for the STY145N65M5?
    The typical gate charge is 414 nC at Vgs=10V.
  8. What are the minimum and maximum gate threshold voltages of the STY145N65M5?
    The minimum gate threshold voltage is 3 V, and the maximum is 5 V.
  9. What is the maximum power dissipation of the STY145N65M5?
    The maximum power dissipation is 625 W.
  10. What technology is used in the STY145N65M5?
    The STY145N65M5 uses MDmesh™ M5 innovative vertical process technology combined with PowerMESH™ horizontal layout.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:138A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 69A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:414 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:18500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):625W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:MAX247™
Package / Case:TO-247-3
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