STY139N65M5
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STMicroelectronics STY139N65M5

Manufacturer No:
STY139N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 130A MAX247
Delivery:
Payment:
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Product Introduction

Overview

The STY139N65M5 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-Resistance (Rds(on))0.014 Ω (typ.)
Continuous Drain Current (Id)130 A
PackageMax247
Operating Temperature Range-40°C to 150°C
Gate Charge (Qg)Low gate charge and input capacitance

Key Features

  • Extremely low on-resistance (Rds(on))
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested
  • High power and superior efficiency

Applications

The STY139N65M5 is optimized for high-power applications, including:

  • Power Factor Correction (PFC)
  • Pulse Width Modulation (PWM) topologies in hard switching applications
  • Switch Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the voltage rating of the STY139N65M5?
    The voltage rating (Vds) of the STY139N65M5 is 650 V.
  2. What is the typical on-resistance of the STY139N65M5?
    The typical on-resistance (Rds(on)) is 0.014 Ω.
  3. What is the continuous drain current of the STY139N65M5?
    The continuous drain current (Id) is 130 A.
  4. In which package is the STY139N65M5 available?
    The STY139N65M5 is available in the Max247 package.
  5. What are the key features of the STY139N65M5?
    The key features include extremely low on-resistance, low gate charge and input capacitance, excellent switching performance, and 100% avalanche testing.
  6. What are the typical applications of the STY139N65M5?
    The STY139N65M5 is typically used in Power Factor Correction (PFC), Pulse Width Modulation (PWM) topologies, Switch Mode Power Supplies (SMPS), data centers, and solar microinverters.
  7. What is the operating temperature range of the STY139N65M5?
    The operating temperature range is -40°C to 150°C.
  8. Is the STY139N65M5 RoHS compliant?
    Yes, the STY139N65M5 is RoHS compliant with an Ecopack2 grade.
  9. Where can I find additional resources and documentation for the STY139N65M5?
    Additional resources, including SPICE models, EDA symbols, and 3D models, can be found on the STMicroelectronics website.
  10. How can I purchase the STY139N65M5?
    The STY139N65M5 can be purchased directly from STMicroelectronics or through authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17mOhm @ 65A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:363 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:15600 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):625W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:MAX247™
Package / Case:TO-247-3
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