STW30N80K5
  • Share:

STMicroelectronics STW30N80K5

Manufacturer No:
STW30N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 24A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW30N80K5 is a high-performance N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its high voltage rating and low on-resistance, making it suitable for a variety of power management applications. The STW30N80K5 is housed in a TO-247 package, which provides excellent thermal dissipation and mechanical robustness.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-Resistance) 0.15 Ω
ID (Drain Current) 24 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package TO-247 -

Key Features

  • High Voltage Rating: 800 V, making it suitable for high-voltage applications.
  • Low On-Resistance: 0.15 Ω, which minimizes power losses and enhances efficiency.
  • High Drain Current: 24 A, supporting high current applications.
  • MDmesh™ K5 Technology: An innovative proprietary vertical structure that improves performance and reliability.
  • TO-247 Package: Provides excellent thermal dissipation and mechanical robustness.

Applications

  • Power Supplies: Suitable for high-voltage power supply designs, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Used in motor drive applications due to its high current and voltage handling capabilities.
  • Industrial Automation: Ideal for various industrial automation and control systems requiring high reliability and performance.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the STW30N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance of the STW30N80K5?

    The typical on-resistance (RDS(on)) is 0.15 Ω.

  3. What is the maximum drain current of the STW30N80K5?

    The maximum drain current (ID) is 24 A.

  4. What package type is the STW30N80K5 available in?

    The STW30N80K5 is available in a TO-247 package.

  5. What technology is used in the STW30N80K5?

    The STW30N80K5 uses the MDmesh™ K5 technology.

  6. What are some typical applications of the STW30N80K5?

    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.

  7. What is the junction temperature range of the STW30N80K5?

    The junction temperature range is -150 to 175 °C.

  8. How does the MDmesh™ K5 technology benefit the STW30N80K5?

    The MDmesh™ K5 technology improves performance and reliability by using an innovative proprietary vertical structure.

  9. Is the STW30N80K5 suitable for high-current applications?
  10. What are the advantages of using the TO-247 package?

    The TO-247 package provides excellent thermal dissipation and mechanical robustness.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1530 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.74
35

Please send RFQ , we will respond immediately.

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT