STW30N80K5
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STMicroelectronics STW30N80K5

Manufacturer No:
STW30N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 24A TO247-3
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The STW30N80K5 is a high-performance N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its high voltage rating and low on-resistance, making it suitable for a variety of power management applications. The STW30N80K5 is housed in a TO-247 package, which provides excellent thermal dissipation and mechanical robustness.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-Resistance) 0.15 Ω
ID (Drain Current) 24 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package TO-247 -

Key Features

  • High Voltage Rating: 800 V, making it suitable for high-voltage applications.
  • Low On-Resistance: 0.15 Ω, which minimizes power losses and enhances efficiency.
  • High Drain Current: 24 A, supporting high current applications.
  • MDmesh™ K5 Technology: An innovative proprietary vertical structure that improves performance and reliability.
  • TO-247 Package: Provides excellent thermal dissipation and mechanical robustness.

Applications

  • Power Supplies: Suitable for high-voltage power supply designs, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Used in motor drive applications due to its high current and voltage handling capabilities.
  • Industrial Automation: Ideal for various industrial automation and control systems requiring high reliability and performance.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the STW30N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance of the STW30N80K5?

    The typical on-resistance (RDS(on)) is 0.15 Ω.

  3. What is the maximum drain current of the STW30N80K5?

    The maximum drain current (ID) is 24 A.

  4. What package type is the STW30N80K5 available in?

    The STW30N80K5 is available in a TO-247 package.

  5. What technology is used in the STW30N80K5?

    The STW30N80K5 uses the MDmesh™ K5 technology.

  6. What are some typical applications of the STW30N80K5?

    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.

  7. What is the junction temperature range of the STW30N80K5?

    The junction temperature range is -150 to 175 °C.

  8. How does the MDmesh™ K5 technology benefit the STW30N80K5?

    The MDmesh™ K5 technology improves performance and reliability by using an innovative proprietary vertical structure.

  9. Is the STW30N80K5 suitable for high-current applications?
  10. What are the advantages of using the TO-247 package?

    The TO-247 package provides excellent thermal dissipation and mechanical robustness.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1530 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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