STW30N80K5
  • Share:

STMicroelectronics STW30N80K5

Manufacturer No:
STW30N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 24A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW30N80K5 is a high-performance N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its high voltage rating and low on-resistance, making it suitable for a variety of power management applications. The STW30N80K5 is housed in a TO-247 package, which provides excellent thermal dissipation and mechanical robustness.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 800 V
RDS(on) (On-Resistance) 0.15 Ω
ID (Drain Current) 24 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -150 to 175 °C
Package TO-247 -

Key Features

  • High Voltage Rating: 800 V, making it suitable for high-voltage applications.
  • Low On-Resistance: 0.15 Ω, which minimizes power losses and enhances efficiency.
  • High Drain Current: 24 A, supporting high current applications.
  • MDmesh™ K5 Technology: An innovative proprietary vertical structure that improves performance and reliability.
  • TO-247 Package: Provides excellent thermal dissipation and mechanical robustness.

Applications

  • Power Supplies: Suitable for high-voltage power supply designs, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Used in motor drive applications due to its high current and voltage handling capabilities.
  • Industrial Automation: Ideal for various industrial automation and control systems requiring high reliability and performance.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the STW30N80K5?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What is the typical on-resistance of the STW30N80K5?

    The typical on-resistance (RDS(on)) is 0.15 Ω.

  3. What is the maximum drain current of the STW30N80K5?

    The maximum drain current (ID) is 24 A.

  4. What package type is the STW30N80K5 available in?

    The STW30N80K5 is available in a TO-247 package.

  5. What technology is used in the STW30N80K5?

    The STW30N80K5 uses the MDmesh™ K5 technology.

  6. What are some typical applications of the STW30N80K5?

    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.

  7. What is the junction temperature range of the STW30N80K5?

    The junction temperature range is -150 to 175 °C.

  8. How does the MDmesh™ K5 technology benefit the STW30N80K5?

    The MDmesh™ K5 technology improves performance and reliability by using an innovative proprietary vertical structure.

  9. Is the STW30N80K5 suitable for high-current applications?
  10. What are the advantages of using the TO-247 package?

    The TO-247 package provides excellent thermal dissipation and mechanical robustness.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1530 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.74
35

Please send RFQ , we will respond immediately.

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M74HC174RM13TR
M74HC174RM13TR
STMicroelectronics
IC FF D-TYPE SNGL 6BIT 16SOP
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA