Overview
The STU7NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters.
The STU7NM60N is part of STMicroelectronics' extensive portfolio of power MOSFETs, which cater to a wide range of industrial and automotive applications. The device is available in the IPAK (TO-251) package, offering high electrical and thermal efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at TC = 25°C | 5 | A |
| Continuous Drain Current (ID) at TC = 100°C | 3 | A |
| Pulsed Drain Current (IDM) | 20 | A |
| Total Dissipation at TC = 25°C | 45 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.84 Ω (typ.), 0.9 Ω (max.) | Ω |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 2.78 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Avalanche Current (IAS) | 2 | A |
| Single Pulse Avalanche Energy (EAS) | 119 | mJ |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High dv/dt capability and excellent avalanche characteristics
- Vertical structure combined with strip layout for low on-resistance and gate charge
Applications
The STU7NM60N is designed for high-efficiency switching applications, including but not limited to:
- Switch-mode power supplies (SMPS)
- Data centers
- Solar microinverters
- Industrial and automotive power conversion systems
Q & A
- What is the maximum drain-source voltage of the STU7NM60N? The maximum drain-source voltage is 600 V.
- What is the continuous drain current at 25°C and 100°C? The continuous drain current is 5 A at 25°C and 3 A at 100°C.
- What is the typical on-resistance of the STU7NM60N? The typical on-resistance is 0.84 Ω.
- What are the key features of the STU7NM60N? Key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.
- In which package is the STU7NM60N available? The STU7NM60N is available in the IPAK (TO-251) package.
- What are the thermal resistance values for the STU7NM60N? The thermal resistance junction-case is 2.78 °C/W, and the thermal resistance junction-ambient is 62.5 °C/W.
- What is the avalanche current and single pulse avalanche energy of the STU7NM60N? The avalanche current is 2 A, and the single pulse avalanche energy is 119 mJ.
- What are the typical applications of the STU7NM60N? Typical applications include SMPS, data centers, solar microinverters, and industrial and automotive power conversion systems.
- What technology is used in the STU7NM60N? The STU7NM60N uses the second generation of MDmesh technology.
- Is the STU7NM60N RoHS compliant? Yes, the STU7NM60N is RoHS compliant with an Ecopack2 grade.
