Overview
The STP62NS04Z is a high-performance N-channel clamped MOSFET produced by STMicroelectronics. This device is fabricated using ST's advanced MESH OVERLAY™ process, which is based on a novel strip layout. This technology enhances the MOSFET's ruggedness and suitability for harsh operating conditions, particularly in automotive and other demanding environments.
The STP62NS04Z is housed in a TO-220 package and is known for its low capacitance, low gate charge, and high current handling capabilities. It is 100% avalanche tested and features a maximum junction temperature of 175°C, making it a reliable choice for various switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 33 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 62 | A |
| Continuous Drain Current (ID) at TC = 100°C | 37.5 | A |
| Pulsed Drain Current (IDM) | 248 | A |
| Total Dissipation at TC = 25°C (PTOT) | 110 | W |
| On-State Resistance (RDS(on)) | 12.5 mΩ (typ), 15 mΩ (max) | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
| Maximum Junction Temperature (TJ) | 175 | °C |
| Thermal Resistance Junction-to-Case (Rthj-c) | 1.36 | °C/W |
| Thermal Resistance Junction-to-Ambient (Rthj-a) | 62.5 | °C/W |
Key Features
- 100% avalanche tested for enhanced reliability.
- Low capacitance and gate charge, reducing switching losses.
- Maximum junction temperature of 175°C for high-temperature applications.
- Clamped MOSFET technology using ST's MESH OVERLAY™ process for improved ruggedness.
- High current handling capability with a continuous drain current of 62 A at 25°C.
- Pulsed drain current up to 248 A, suitable for high-power applications.
- Low on-state resistance (RDS(on)) of 12.5 mΩ (typ), 15 mΩ (max).
- ESD protection with a rating of 8 V (HBM - C = 100 pF, R = 1.5 kΩ).
Applications
The STP62NS04Z is particularly suited for switching applications in harsh environments, such as:
- Automotive systems, including power management and motor control.
- Industrial power supplies and converters.
- High-power DC-DC converters.
- Motor drives and control systems.
- Any application requiring high current handling and ruggedness.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP62NS04Z?
The maximum drain-source voltage (VDS) is 33 V.
- What is the continuous drain current (ID) at 25°C for the STP62NS04Z?
The continuous drain current (ID) at 25°C is 62 A.
- What is the maximum junction temperature (TJ) of the STP62NS04Z?
The maximum junction temperature (TJ) is 175°C.
- What is the on-state resistance (RDS(on)) of the STP62NS04Z?
The on-state resistance (RDS(on)) is typically 12.5 mΩ and a maximum of 15 mΩ.
- What is the thermal resistance junction-to-case (Rthj-c) of the STP62NS04Z?
The thermal resistance junction-to-case (Rthj-c) is 1.36 °C/W.
- Is the STP62NS04Z 100% avalanche tested?
Yes, the STP62NS04Z is 100% avalanche tested.
- What is the package type of the STP62NS04Z?
The package type is TO-220.
- What are the typical applications of the STP62NS04Z?
The STP62NS04Z is typically used in automotive systems, industrial power supplies, high-power DC-DC converters, and motor drives.
- What is the pulsed drain current (IDM) of the STP62NS04Z?
The pulsed drain current (IDM) is up to 248 A.
- Does the STP62NS04Z have ESD protection?
Yes, it has ESD protection with a rating of 8 V (HBM - C = 100 pF, R = 1.5 kΩ).
