STP60NE06-16
  • Share:

STMicroelectronics STP60NE06-16

Manufacturer No:
STP60NE06-16
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 60A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP60NE06-16 is a high-performance N-Channel Power MOSFET developed by STMicroelectronics using their unique 'Single Feature Size' strip-based process. This transistor is known for its high packing density, low on-resistance, and rugged avalanche characteristics. It is designed to offer exceptional dv/dt capability, low gate charge, and high reliability, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±20 V
Drain Current (ID) at TC = 25°C 60 A
Drain Current (ID) at TC = 100°C 42 A
Pulsed Drain Current (IDM) 240 A
Total Dissipation at TC = 25°C 150 W
Maximum Junction Temperature (Tj) 175 °C
Static Drain-Source On Resistance (RDS(on)) < 0.016 Ω
Total Gate Charge (Qg) 115 nC
Rise Time (tr) 125 ns
Output Capacitance (Coss) 580 pF

Key Features

  • Typical RDS(on) of 0.013 Ω, ensuring low on-resistance.
  • Exceptional dv/dt capability and high dv/dt ruggedness.
  • 100% avalanche tested for robustness and reliability.
  • Low gate charge for efficient switching.
  • High packing density due to the 'Single Feature Size' process.
  • Easy to use with standard level gate drive.
  • Minimum lot-to-lot variations for consistent performance.

Applications

  • DC Motor Control
  • DC-DC and DC-AC Converters
  • Synchronous Rectification
  • Power Supply Systems
  • Switching Applications

Q & A

  1. What is the maximum drain-source voltage of the STP60NE06-16 MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the maximum drain current at 25°C for the STP60NE06-16?

    The maximum drain current (ID) at 25°C is 60 A.

  3. What is the typical on-resistance (RDS(on)) of the STP60NE06-16?

    The typical on-resistance (RDS(on)) is 0.013 Ω.

  4. What is the maximum junction temperature for the STP60NE06-16?

    The maximum junction temperature (Tj) is 175°C.

  5. What are the common applications of the STP60NE06-16 MOSFET?

    Common applications include DC motor control, DC-DC and DC-AC converters, synchronous rectification, and power supply systems.

  6. What is the total gate charge (Qg) for the STP60NE06-16?

    The total gate charge (Qg) is 115 nC.

  7. What is the rise time (tr) for the STP60NE06-16?

    The rise time (tr) is 125 ns.

  8. What is the output capacitance (Coss) of the STP60NE06-16?

    The output capacitance (Coss) is 580 pF.

  9. Is the STP60NE06-16 100% avalanche tested?
  10. What package types are available for the STP60NE06-16?

    The STP60NE06-16 is available in TO-220 and TO-220FP packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
459

Please send RFQ , we will respond immediately.

Similar Products

Part Number STP60NE06-16 STP60NE06L-16
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 30A, 10V 14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V 70 nC @ 5 V
Vgs (Max) ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 25 V 4150 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO