STP45N65M5
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STMicroelectronics STP45N65M5

Manufacturer No:
STP45N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 35A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP45N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making the STP45N65M5 especially suitable for applications requiring superior power density and outstanding efficiency.

Key Specifications

Parameter Value Unit
VDSS (Drain-Source Breakdown Voltage) 650 V
RDS(on) (Static Drain-Source On-Resistance) 0.067 (typ.), 0.078 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 35 A
ID (Drain Current, continuous at TC = 100 °C) 22 A
IDM (Drain Current, pulsed) 140 A
VGS (Gate-Source Voltage) ± 25 V
Tj (Max. Operating Junction Temperature) 150 °C
Tstg (Storage Temperature) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 0.60 °C/W
Rthj-pcb (Thermal Resistance Junction-PCB) 30 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W

Key Features

  • Worldwide best RDS(on) * area, ensuring extremely low on-resistance.
  • Higher VDSS rating and high dv/dt capability, enhancing the device's ruggedness and reliability.
  • Excellent switching performance, making it suitable for high-frequency applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Available in D2PAK, TO-220FP, and TO-220 packages, offering flexibility in design and application.

Applications

The STP45N65M5 is particularly suited for switching applications that require superior power density and outstanding efficiency. These include:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source breakdown voltage (VDSS) of the STP45N65M5?

    The maximum drain-source breakdown voltage (VDSS) is 650 V.

  2. What is the typical static drain-source on-resistance (RDS(on)) of the STP45N65M5?

    The typical static drain-source on-resistance (RDS(on)) is 0.067 Ω.

  3. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 35 A.

  4. What are the package options available for the STP45N65M5?

    The STP45N65M5 is available in D2PAK, TO-220FP, and TO-220 packages.

  5. What is the maximum operating junction temperature (Tj) for the STP45N65M5?

    The maximum operating junction temperature (Tj) is 150 °C.

  6. What is the thermal resistance junction-case (Rthj-case) for the STP45N65M5?

    The thermal resistance junction-case (Rthj-case) is 0.60 °C/W.

  7. Is the STP45N65M5 100% avalanche tested?

    Yes, the STP45N65M5 is 100% avalanche tested.

  8. What are some common applications for the STP45N65M5?

    Common applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and industrial and automotive power management systems.

  9. What is the gate-source voltage (VGS) range for the STP45N65M5?

    The gate-source voltage (VGS) range is ± 25 V.

  10. What is the storage temperature range for the STP45N65M5?

    The storage temperature range is -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:78mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3375 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB45N65M5
STB45N65M5
MOSFET N CH 650V 35A D2PAK
STF45N65M5
STF45N65M5
MOSFET N-CH 650V 35A TO220FP

Similar Products

Part Number STP45N65M5 STP35N65M5 STP42N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 27A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 19.5A, 10V 98mOhm @ 13.5A, 10V 79mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 83 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3375 pF @ 100 V 3750 pF @ 100 V 4650 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 210W (Tc) 160W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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