Overview
The STP45N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making the STP45N65M5 especially suitable for applications requiring superior power density and outstanding efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDSS (Drain-Source Breakdown Voltage) | 650 | V |
| RDS(on) (Static Drain-Source On-Resistance) | 0.067 (typ.), 0.078 (max.) | Ω |
| ID (Drain Current, continuous at TC = 25 °C) | 35 | A |
| ID (Drain Current, continuous at TC = 100 °C) | 22 | A |
| IDM (Drain Current, pulsed) | 140 | A |
| VGS (Gate-Source Voltage) | ± 25 | V |
| Tj (Max. Operating Junction Temperature) | 150 | °C |
| Tstg (Storage Temperature) | -55 to 150 | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 0.60 | °C/W |
| Rthj-pcb (Thermal Resistance Junction-PCB) | 30 | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 62.5 | °C/W |
Key Features
- Worldwide best RDS(on) * area, ensuring extremely low on-resistance.
- Higher VDSS rating and high dv/dt capability, enhancing the device's ruggedness and reliability.
- Excellent switching performance, making it suitable for high-frequency applications.
- 100% avalanche tested, ensuring robustness against transient conditions.
- Available in D2PAK, TO-220FP, and TO-220 packages, offering flexibility in design and application.
Applications
The STP45N65M5 is particularly suited for switching applications that require superior power density and outstanding efficiency. These include:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source breakdown voltage (VDSS) of the STP45N65M5?
The maximum drain-source breakdown voltage (VDSS) is 650 V.
- What is the typical static drain-source on-resistance (RDS(on)) of the STP45N65M5?
The typical static drain-source on-resistance (RDS(on)) is 0.067 Ω.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 35 A.
- What are the package options available for the STP45N65M5?
The STP45N65M5 is available in D2PAK, TO-220FP, and TO-220 packages.
- What is the maximum operating junction temperature (Tj) for the STP45N65M5?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the thermal resistance junction-case (Rthj-case) for the STP45N65M5?
The thermal resistance junction-case (Rthj-case) is 0.60 °C/W.
- Is the STP45N65M5 100% avalanche tested?
Yes, the STP45N65M5 is 100% avalanche tested.
- What are some common applications for the STP45N65M5?
Common applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and industrial and automotive power management systems.
- What is the gate-source voltage (VGS) range for the STP45N65M5?
The gate-source voltage (VGS) range is ± 25 V.
- What is the storage temperature range for the STP45N65M5?
The storage temperature range is -55 to 150 °C.
