Overview
The STP270N8F7 is an N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET F7 technology. This component is designed for high-performance applications requiring low on-state resistance and efficient switching. Although the specific model STP270N8F7W is listed as obsolete, the STP270N8F7 remains a viable option with similar specifications. The device is available in TO-220, H²PAK-2, and H²PAK-6 packages, catering to various design needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 180 | A |
| Pulsed Drain Current (IDM) | 720 | A |
| Total Power Dissipation at TC = 25 °C | 315 | W |
| Operating Junction Temperature Range | -55 to 175 | °C |
| Static Drain-Source On-Resistance (RDS(on)) for TO-220 | 0.0021 - 0.0025 | Ω |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.48 | °C/W |
Key Features
- Utilizes STripFET F7 technology with an enhanced trench gate structure for very low on-state resistance.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness for reliability in harsh conditions.
- Fast and efficient switching due to reduced internal capacitance and gate charge.
Applications
The STP270N8F7 is suitable for a variety of switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Aerospace and automotive systems requiring high reliability and performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP270N8F7?
The maximum drain-source voltage (VDS) is 80 V. - What are the typical and maximum values of the static drain-source on-resistance (RDS(on)) for the TO-220 package?
The typical value is 0.0021 Ω, and the maximum value is 0.0025 Ω. - What is the continuous drain current (ID) rating at 25 °C?
The continuous drain current (ID) is 180 A. - What is the thermal resistance, junction-to-case (RthJC), for the H²PAK-2 and H²PAK-6 packages?
The thermal resistance, junction-to-case (RthJC), is 0.48 °C/W. - What are the key benefits of using STripFET F7 technology in the STP270N8F7?
The key benefits include very low on-state resistance, reduced internal capacitance, and faster switching times. - What is the operating junction temperature range for the STP270N8F7?
The operating junction temperature range is -55 to 175 °C. - What is the total power dissipation at 25 °C for the STP270N8F7?
The total power dissipation at 25 °C is 315 W. - What are some common applications for the STP270N8F7?
Common applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits. - Is the STP270N8F7 available in different packages?
Yes, it is available in TO-220, H²PAK-2, and H²PAK-6 packages. - What is the significance of the low Crss/Ciss ratio in the STP270N8F7?
The low Crss/Ciss ratio improves EMI immunity, making the device more robust in noisy environments.
