STP220N6F7
  • Share:

STMicroelectronics STP220N6F7

Manufacturer No:
STP220N6F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 120A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP220N6F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is designed to offer very low on-resistance and high avalanche ruggedness, making it suitable for a wide range of power management applications. The STP220N6F7 is housed in a TO-220 package, providing a robust and reliable solution for high-power requirements.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-Resistance) 2.1 Ω
ID (Continuous Drain Current) 120 A
Ptot (Total Power Dissipation) W
TJ (Junction Temperature) -55 to 150 °C
Package TO-220

Key Features

  • Advanced STripFET™ F7 Technology: Offers very low on-resistance and enhanced trench gate structure for improved performance.
  • High Avalanche Ruggedness: Ensures the device can withstand high energy pulses in avalanche conditions.
  • High Continuous Drain Current: Supports up to 120 A, making it suitable for high-power applications.
  • Wide Junction Temperature Range: Operates from -55°C to 150°C, enhancing reliability in various environmental conditions.
  • Robust TO-220 Package: Provides a reliable and compact solution for power management needs.

Applications

  • Power Supplies: Suitable for high-power DC-DC converters and switching power supplies.
  • Motor Control: Used in motor drive applications due to its high current handling and low on-resistance.
  • Industrial Automation: Ideal for various industrial automation systems requiring high reliability and performance.
  • Automotive Systems: Can be used in automotive applications such as battery management and power distribution.
  • Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage of the STP220N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance of the STP220N6F7?

    The typical on-resistance (RDS(on)) is 2.1 Ω.

  3. What is the continuous drain current rating of the STP220N6F7?

    The continuous drain current (ID) is 120 A.

  4. In what package is the STP220N6F7 available?

    The STP220N6F7 is available in a TO-220 package.

  5. What is the junction temperature range of the STP220N6F7?

    The junction temperature range is from -55°C to 150°C.

  6. What technology does the STP220N6F7 use?

    The STP220N6F7 uses the advanced STripFET™ F7 technology.

  7. Is the STP220N6F7 suitable for high-power applications?

    Yes, it is suitable for high-power applications due to its high current handling and low on-resistance.

  8. Can the STP220N6F7 be used in automotive systems?

    Yes, it can be used in automotive systems for applications such as battery management and power distribution.

  9. What are some common applications of the STP220N6F7?

    Common applications include power supplies, motor control, industrial automation, and renewable energy systems.

  10. Does the STP220N6F7 have high avalanche ruggedness?

    Yes, the STP220N6F7 has high avalanche ruggedness, making it capable of withstanding high energy pulses in avalanche conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):237W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.52
84

Please send RFQ , we will respond immediately.

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F723ZET6
STM32F723ZET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON