STP220N6F7
  • Share:

STMicroelectronics STP220N6F7

Manufacturer No:
STP220N6F7
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 120A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP220N6F7 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced STripFET™ F7 technology. This device is designed to offer very low on-resistance and high avalanche ruggedness, making it suitable for a wide range of power management applications. The STP220N6F7 is housed in a TO-220 package, providing a robust and reliable solution for high-power requirements.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
RDS(on) (On-Resistance) 2.1 Ω
ID (Continuous Drain Current) 120 A
Ptot (Total Power Dissipation) W
TJ (Junction Temperature) -55 to 150 °C
Package TO-220

Key Features

  • Advanced STripFET™ F7 Technology: Offers very low on-resistance and enhanced trench gate structure for improved performance.
  • High Avalanche Ruggedness: Ensures the device can withstand high energy pulses in avalanche conditions.
  • High Continuous Drain Current: Supports up to 120 A, making it suitable for high-power applications.
  • Wide Junction Temperature Range: Operates from -55°C to 150°C, enhancing reliability in various environmental conditions.
  • Robust TO-220 Package: Provides a reliable and compact solution for power management needs.

Applications

  • Power Supplies: Suitable for high-power DC-DC converters and switching power supplies.
  • Motor Control: Used in motor drive applications due to its high current handling and low on-resistance.
  • Industrial Automation: Ideal for various industrial automation systems requiring high reliability and performance.
  • Automotive Systems: Can be used in automotive applications such as battery management and power distribution.
  • Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage of the STP220N6F7?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance of the STP220N6F7?

    The typical on-resistance (RDS(on)) is 2.1 Ω.

  3. What is the continuous drain current rating of the STP220N6F7?

    The continuous drain current (ID) is 120 A.

  4. In what package is the STP220N6F7 available?

    The STP220N6F7 is available in a TO-220 package.

  5. What is the junction temperature range of the STP220N6F7?

    The junction temperature range is from -55°C to 150°C.

  6. What technology does the STP220N6F7 use?

    The STP220N6F7 uses the advanced STripFET™ F7 technology.

  7. Is the STP220N6F7 suitable for high-power applications?

    Yes, it is suitable for high-power applications due to its high current handling and low on-resistance.

  8. Can the STP220N6F7 be used in automotive systems?

    Yes, it can be used in automotive systems for applications such as battery management and power distribution.

  9. What are some common applications of the STP220N6F7?

    Common applications include power supplies, motor control, industrial automation, and renewable energy systems.

  10. Does the STP220N6F7 have high avalanche ruggedness?

    Yes, the STP220N6F7 has high avalanche ruggedness, making it capable of withstanding high energy pulses in avalanche conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):237W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.52
84

Please send RFQ , we will respond immediately.

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3
L7809ACD2T-TR
L7809ACD2T-TR
STMicroelectronics
IC REG LINEAR 9V 1.5A D2PAK
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA