STP200N3LL
  • Share:

STMicroelectronics STP200N3LL

Manufacturer No:
STP200N3LL
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 30V 120A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP200N3LL is an N-channel Power MOSFET manufactured by STMicroelectronics. This device is characterized by its very low on-resistance (RDS(on)) and is available in a TO-220 package. It is part of the STripFET H6 family, known for its high performance and reliability in various applications.

Key Specifications

Parameter Value Unit
Maximum Drain-Source Voltage (VDS) 30 V
Maximum Gate-Source Voltage (VGS) 20 V
Maximum Drain Current (ID) 120 A
Maximum Junction Temperature (Tj) 175 °C
On-State Resistance (RDS(on)) 2.15 mΩ (typ.) Ω
Total Gate Charge (Qg) 53 nC C
Output Capacitance (Coss) 640 pF F
Rise Time (tr) 183 ns s
Maximum Power Dissipation (Pd) 176.5 W W
Package TO-220

Key Features

  • Very low on-resistance (RDS(on))
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

The STP200N3LL is primarily used in switching applications due to its high current handling capability and low on-resistance. It is suitable for a wide range of industrial and automotive applications where high power and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the STP200N3LL?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the typical on-state resistance of the STP200N3LL?

    The typical on-state resistance (RDS(on)) is 2.15 mΩ.

  3. What is the maximum drain current of the STP200N3LL?

    The maximum drain current (ID) is 120 A.

  4. What is the maximum junction temperature of the STP200N3LL?

    The maximum junction temperature (Tj) is 175 °C.

  5. What package type is the STP200N3LL available in?

    The STP200N3LL is available in a TO-220 package.

  6. What are the key features of the STP200N3LL?

    The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.

  7. What are the typical applications of the STP200N3LL?

    The STP200N3LL is typically used in switching applications, including industrial and automotive sectors.

  8. What is the total gate charge of the STP200N3LL?

    The total gate charge (Qg) is 53 nC.

  9. What is the output capacitance of the STP200N3LL?

    The output capacitance (Coss) is 640 pF.

  10. What is the rise time of the STP200N3LL?

    The rise time (tr) is 183 ns.

  11. What is the maximum power dissipation of the STP200N3LL?

    The maximum power dissipation (Pd) is 176.5 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):176.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.65
151

Please send RFQ , we will respond immediately.

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F215ZET6TR
STM32F215ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
ST2129BQTR
ST2129BQTR
STMicroelectronics
IC TRNSLTR BIDIRECTIONAL 8QFN
M27C2001-10F1
M27C2001-10F1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32CDIP
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA