STP200N3LL
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STMicroelectronics STP200N3LL

Manufacturer No:
STP200N3LL
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 30V 120A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP200N3LL is an N-channel Power MOSFET manufactured by STMicroelectronics. This device is characterized by its very low on-resistance (RDS(on)) and is available in a TO-220 package. It is part of the STripFET H6 family, known for its high performance and reliability in various applications.

Key Specifications

Parameter Value Unit
Maximum Drain-Source Voltage (VDS) 30 V
Maximum Gate-Source Voltage (VGS) 20 V
Maximum Drain Current (ID) 120 A
Maximum Junction Temperature (Tj) 175 °C
On-State Resistance (RDS(on)) 2.15 mΩ (typ.) Ω
Total Gate Charge (Qg) 53 nC C
Output Capacitance (Coss) 640 pF F
Rise Time (tr) 183 ns s
Maximum Power Dissipation (Pd) 176.5 W W
Package TO-220

Key Features

  • Very low on-resistance (RDS(on))
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

The STP200N3LL is primarily used in switching applications due to its high current handling capability and low on-resistance. It is suitable for a wide range of industrial and automotive applications where high power and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the STP200N3LL?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the typical on-state resistance of the STP200N3LL?

    The typical on-state resistance (RDS(on)) is 2.15 mΩ.

  3. What is the maximum drain current of the STP200N3LL?

    The maximum drain current (ID) is 120 A.

  4. What is the maximum junction temperature of the STP200N3LL?

    The maximum junction temperature (Tj) is 175 °C.

  5. What package type is the STP200N3LL available in?

    The STP200N3LL is available in a TO-220 package.

  6. What are the key features of the STP200N3LL?

    The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.

  7. What are the typical applications of the STP200N3LL?

    The STP200N3LL is typically used in switching applications, including industrial and automotive sectors.

  8. What is the total gate charge of the STP200N3LL?

    The total gate charge (Qg) is 53 nC.

  9. What is the output capacitance of the STP200N3LL?

    The output capacitance (Coss) is 640 pF.

  10. What is the rise time of the STP200N3LL?

    The rise time (tr) is 183 ns.

  11. What is the maximum power dissipation of the STP200N3LL?

    The maximum power dissipation (Pd) is 176.5 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):176.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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