Overview
The STP200N3LL is an N-channel Power MOSFET manufactured by STMicroelectronics. This device is characterized by its very low on-resistance (RDS(on)) and is available in a TO-220 package. It is part of the STripFET H6 family, known for its high performance and reliability in various applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Maximum Drain-Source Voltage (VDS) | 30 | V |
Maximum Gate-Source Voltage (VGS) | 20 | V |
Maximum Drain Current (ID) | 120 | A |
Maximum Junction Temperature (Tj) | 175 | °C |
On-State Resistance (RDS(on)) | 2.15 mΩ (typ.) | Ω |
Total Gate Charge (Qg) | 53 nC | C |
Output Capacitance (Coss) | 640 pF | F |
Rise Time (tr) | 183 ns | s |
Maximum Power Dissipation (Pd) | 176.5 W | W |
Package | TO-220 |
Key Features
- Very low on-resistance (RDS(on))
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
The STP200N3LL is primarily used in switching applications due to its high current handling capability and low on-resistance. It is suitable for a wide range of industrial and automotive applications where high power and efficiency are required.
Q & A
- What is the maximum drain-source voltage of the STP200N3LL?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical on-state resistance of the STP200N3LL?
The typical on-state resistance (RDS(on)) is 2.15 mΩ.
- What is the maximum drain current of the STP200N3LL?
The maximum drain current (ID) is 120 A.
- What is the maximum junction temperature of the STP200N3LL?
The maximum junction temperature (Tj) is 175 °C.
- What package type is the STP200N3LL available in?
The STP200N3LL is available in a TO-220 package.
- What are the key features of the STP200N3LL?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- What are the typical applications of the STP200N3LL?
The STP200N3LL is typically used in switching applications, including industrial and automotive sectors.
- What is the total gate charge of the STP200N3LL?
The total gate charge (Qg) is 53 nC.
- What is the output capacitance of the STP200N3LL?
The output capacitance (Coss) is 640 pF.
- What is the rise time of the STP200N3LL?
The rise time (tr) is 183 ns.
- What is the maximum power dissipation of the STP200N3LL?
The maximum power dissipation (Pd) is 176.5 W.