STP15N65M5
  • Share:

STMicroelectronics STP15N65M5

Manufacturer No:
STP15N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 650V 11A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP15N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making the STP15N65M5 especially suitable for applications requiring superior power density and outstanding efficiency.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VBRDSS) 650 V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current (ID) at TC = 25°C 11 A
Continuous Drain Current (ID) at TC = 100°C 6.9 A
Pulsed Drain Current (IDM) 44 A
Static Drain-Source On-Resistance (RDS(on)) 0.308 (typ.), 0.34 (max.) Ω
Gate Threshold Voltage (VGS(th)) 3-5 V
Total Dissipation at TC = 25°C 85 W
Max. Operating Junction Temperature (Tj) 150 °C
Thermal Resistance Junction-Case (Rthj-case) 5 (TO-220FP), 1.47 (I2PAKFP) °C/W

Key Features

  • Worldwide best RDS(on) * area, ensuring low on-resistance and high efficiency.
  • Higher VDSS rating and high dv/dt capability, suitable for high-voltage applications.
  • Excellent switching performance, making it ideal for switching applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Available in TO-220, TO-220FP, and I2PAKFP packages, offering flexibility in design.

Applications

The STP15N65M5 is designed for various switching applications where high power density and efficiency are crucial. These include:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source breakdown voltage of the STP15N65M5?

    The maximum drain-source breakdown voltage (VBRDSS) is 650 V.

  2. What is the typical on-resistance of the STP15N65M5?

    The typical static drain-source on-resistance (RDS(on)) is 0.308 Ω.

  3. What are the available package types for the STP15N65M5?

    The STP15N65M5 is available in TO-220, TO-220FP, and I2PAKFP packages.

  4. What is the maximum continuous drain current at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 11 A.

  5. What is the maximum operating junction temperature?

    The maximum operating junction temperature (Tj) is 150°C.

  6. Is the STP15N65M5 100% avalanche tested?
  7. What is the thermal resistance junction-case for the TO-220FP package?

    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 5°C/W.

  8. What are some typical applications for the STP15N65M5?

    Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  9. What is the gate-source voltage range for the STP15N65M5?

    The gate-source voltage (VGS) range is ±25 V.

  10. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 85 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:340mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.89
72

Please send RFQ , we will respond immediately.

Same Series
STFI15N65M5
STFI15N65M5
MOSFET N CH 650V 11A I2PAKFP
STF15N65M5
STF15N65M5
MOSFET N-CH 650V 11A TO220FP

Similar Products

Part Number STP15N65M5 STP16N65M5 STP18N65M5 STP11N65M5 STP12N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 12A (Tc) 15A (Tc) 9A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 220mOhm @ 7.5A, 10V 480mOhm @ 4.5A, 10V 430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 45 nC @ 10 V 31 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 100 V 1250 pF @ 100 V 1240 pF @ 100 V 644 pF @ 100 V 900 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 125W (Tc) 90W (Tc) 110W (Tc) 85W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA