STP15N65M5
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STMicroelectronics STP15N65M5

Manufacturer No:
STP15N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N CH 650V 11A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP15N65M5 is an N-channel MDmesh™ V Power MOSFET produced by STMicroelectronics. This device is based on an innovative proprietary vertical process technology combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This combination results in extremely low on-resistance, making the STP15N65M5 especially suitable for applications requiring superior power density and outstanding efficiency.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VBRDSS) 650 V
Gate-Source Voltage (VGS) ±25 V
Continuous Drain Current (ID) at TC = 25°C 11 A
Continuous Drain Current (ID) at TC = 100°C 6.9 A
Pulsed Drain Current (IDM) 44 A
Static Drain-Source On-Resistance (RDS(on)) 0.308 (typ.), 0.34 (max.) Ω
Gate Threshold Voltage (VGS(th)) 3-5 V
Total Dissipation at TC = 25°C 85 W
Max. Operating Junction Temperature (Tj) 150 °C
Thermal Resistance Junction-Case (Rthj-case) 5 (TO-220FP), 1.47 (I2PAKFP) °C/W

Key Features

  • Worldwide best RDS(on) * area, ensuring low on-resistance and high efficiency.
  • Higher VDSS rating and high dv/dt capability, suitable for high-voltage applications.
  • Excellent switching performance, making it ideal for switching applications.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Available in TO-220, TO-220FP, and I2PAKFP packages, offering flexibility in design.

Applications

The STP15N65M5 is designed for various switching applications where high power density and efficiency are crucial. These include:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source breakdown voltage of the STP15N65M5?

    The maximum drain-source breakdown voltage (VBRDSS) is 650 V.

  2. What is the typical on-resistance of the STP15N65M5?

    The typical static drain-source on-resistance (RDS(on)) is 0.308 Ω.

  3. What are the available package types for the STP15N65M5?

    The STP15N65M5 is available in TO-220, TO-220FP, and I2PAKFP packages.

  4. What is the maximum continuous drain current at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 11 A.

  5. What is the maximum operating junction temperature?

    The maximum operating junction temperature (Tj) is 150°C.

  6. Is the STP15N65M5 100% avalanche tested?
  7. What is the thermal resistance junction-case for the TO-220FP package?

    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 5°C/W.

  8. What are some typical applications for the STP15N65M5?

    Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching circuits.

  9. What is the gate-source voltage range for the STP15N65M5?

    The gate-source voltage (VGS) range is ±25 V.

  10. What is the total dissipation at TC = 25°C?

    The total dissipation at TC = 25°C is 85 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:340mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:810 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STFI15N65M5
STFI15N65M5
MOSFET N CH 650V 11A I2PAKFP
STF15N65M5
STF15N65M5
MOSFET N-CH 650V 11A TO220FP

Similar Products

Part Number STP15N65M5 STP16N65M5 STP18N65M5 STP11N65M5 STP12N65M5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 12A (Tc) 15A (Tc) 9A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 5.5A, 10V 299mOhm @ 6A, 10V 220mOhm @ 7.5A, 10V 480mOhm @ 4.5A, 10V 430mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 45 nC @ 10 V 31 nC @ 10 V 17 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 100 V 1250 pF @ 100 V 1240 pF @ 100 V 644 pF @ 100 V 900 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 125W (Tc) 90W (Tc) 110W (Tc) 85W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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