STP10N105K5
  • Share:

STMicroelectronics STP10N105K5

Manufacturer No:
STP10N105K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1050V 6A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP10N105K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is available in TO-220, TO-220FP, and TO-247 packages. It is characterized by its very low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)1050V
RDS(on) (Static Drain-Source On-Resistance)1.3 Ω (typ.)
ID (Drain Current, continuous at TC = 25 °C)6A
ID (Drain Current, continuous at TC = 100 °C)3.78A
PTOT (Total Dissipation at TC = 25 °C)130W
VGS (Gate-Source Voltage)±30V
Tj (Operating Junction Temperature)-55 to 150°C
Tstg (Storage Temperature)-55 to 150°C

Key Features

  • Industry’s lowest RDS(on)
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected gate-source diode for enhanced ESD capability

Applications

The STP10N105K5 is suitable for various switching applications where high power density and efficiency are crucial. These include but are not limited to:

  • Power supplies
  • Motor control
  • Industrial automation
  • High-voltage DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STP10N105K5?
    The maximum drain-source voltage (VDS) is 1050 V.
  2. What is the typical on-resistance of the STP10N105K5?
    The typical on-resistance (RDS(on)) is 1.3 Ω.
  3. What are the package options for the STP10N105K5?
    The device is available in TO-220, TO-220FP, and TO-247 packages.
  4. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 6 A.
  5. What is the total dissipation power at 25 °C?
    The total dissipation power (PTOT) at 25 °C is 130 W.
  6. Is the STP10N105K5 protected against avalanche?
    Yes, the device is 100% avalanche tested.
  7. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  8. What is the operating junction temperature range?
    The operating junction temperature (Tj) range is -55 to 150 °C.
  9. What is the significance of the built-in Zener diodes?
    The built-in Zener diodes enhance the ESD capability of the device and eliminate the need for external protection components.
  10. What are some typical applications for the STP10N105K5?
    Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):30V
Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
12

Please send RFQ , we will respond immediately.

Same Series
STW10N105K5
STW10N105K5
MOSFET N-CH 1050V 6A TO247
STP10N105K5
STP10N105K5
MOSFET N-CH 1050V 6A TO220

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC