STP10N105K5
  • Share:

STMicroelectronics STP10N105K5

Manufacturer No:
STP10N105K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1050V 6A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP10N105K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is available in TO-220, TO-220FP, and TO-247 packages. It is characterized by its very low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)1050V
RDS(on) (Static Drain-Source On-Resistance)1.3 Ω (typ.)
ID (Drain Current, continuous at TC = 25 °C)6A
ID (Drain Current, continuous at TC = 100 °C)3.78A
PTOT (Total Dissipation at TC = 25 °C)130W
VGS (Gate-Source Voltage)±30V
Tj (Operating Junction Temperature)-55 to 150°C
Tstg (Storage Temperature)-55 to 150°C

Key Features

  • Industry’s lowest RDS(on)
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected gate-source diode for enhanced ESD capability

Applications

The STP10N105K5 is suitable for various switching applications where high power density and efficiency are crucial. These include but are not limited to:

  • Power supplies
  • Motor control
  • Industrial automation
  • High-voltage DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STP10N105K5?
    The maximum drain-source voltage (VDS) is 1050 V.
  2. What is the typical on-resistance of the STP10N105K5?
    The typical on-resistance (RDS(on)) is 1.3 Ω.
  3. What are the package options for the STP10N105K5?
    The device is available in TO-220, TO-220FP, and TO-247 packages.
  4. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 6 A.
  5. What is the total dissipation power at 25 °C?
    The total dissipation power (PTOT) at 25 °C is 130 W.
  6. Is the STP10N105K5 protected against avalanche?
    Yes, the device is 100% avalanche tested.
  7. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  8. What is the operating junction temperature range?
    The operating junction temperature (Tj) range is -55 to 150 °C.
  9. What is the significance of the built-in Zener diodes?
    The built-in Zener diodes enhance the ESD capability of the device and eliminate the need for external protection components.
  10. What are some typical applications for the STP10N105K5?
    Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):30V
Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
12

Please send RFQ , we will respond immediately.

Same Series
STW10N105K5
STW10N105K5
MOSFET N-CH 1050V 6A TO247
STP10N105K5
STP10N105K5
MOSFET N-CH 1050V 6A TO220

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VIPER27LDTR
VIPER27LDTR
STMicroelectronics
IC OFFLINE SWITCH FLYBACK 16SO
MC34063ABD
MC34063ABD
STMicroelectronics
IC REG BUCK BST ADJ 1.5A 8SO
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN