STP10N105K5
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STMicroelectronics STP10N105K5

Manufacturer No:
STP10N105K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1050V 6A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP10N105K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is available in TO-220, TO-220FP, and TO-247 packages. It is characterized by its very low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)1050V
RDS(on) (Static Drain-Source On-Resistance)1.3 Ω (typ.)
ID (Drain Current, continuous at TC = 25 °C)6A
ID (Drain Current, continuous at TC = 100 °C)3.78A
PTOT (Total Dissipation at TC = 25 °C)130W
VGS (Gate-Source Voltage)±30V
Tj (Operating Junction Temperature)-55 to 150°C
Tstg (Storage Temperature)-55 to 150°C

Key Features

  • Industry’s lowest RDS(on)
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected gate-source diode for enhanced ESD capability

Applications

The STP10N105K5 is suitable for various switching applications where high power density and efficiency are crucial. These include but are not limited to:

  • Power supplies
  • Motor control
  • Industrial automation
  • High-voltage DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the STP10N105K5?
    The maximum drain-source voltage (VDS) is 1050 V.
  2. What is the typical on-resistance of the STP10N105K5?
    The typical on-resistance (RDS(on)) is 1.3 Ω.
  3. What are the package options for the STP10N105K5?
    The device is available in TO-220, TO-220FP, and TO-247 packages.
  4. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 6 A.
  5. What is the total dissipation power at 25 °C?
    The total dissipation power (PTOT) at 25 °C is 130 W.
  6. Is the STP10N105K5 protected against avalanche?
    Yes, the device is 100% avalanche tested.
  7. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  8. What is the operating junction temperature range?
    The operating junction temperature (Tj) range is -55 to 150 °C.
  9. What is the significance of the built-in Zener diodes?
    The built-in Zener diodes enhance the ESD capability of the device and eliminate the need for external protection components.
  10. What are some typical applications for the STP10N105K5?
    Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):30V
Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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