STL8N6LF6AG
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STMicroelectronics STL8N6LF6AG

Manufacturer No:
STL8N6LF6AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 32A POWERFLAT
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STL8N6LF6AG is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, enhancing its performance and efficiency. It is designed for high-power applications and is particularly suited for automotive and industrial uses due to its robust specifications and reliability.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Drain Current) 32 A
RDS(on) (On-State Resistance) 21
PD(Tc) (Power Dissipation at Tc) 55 W
PD(Ta) (Power Dissipation at Ta) 4.8 W
Package PowerFLAT™ (5x6)
Qualification AEC-Q101

Key Features

  • Advanced STripFET™ F6 technology with a new trench gate structure for improved performance and efficiency.
  • High drain current capability of 32 A.
  • Low on-state resistance of 21 mΩ.
  • High power dissipation of up to 55 W at Tc.
  • Compact PowerFLAT™ (5x6) package for efficient thermal management.
  • AEC-Q101 qualified, making it suitable for automotive applications.

Applications

  • Automotive systems, including power steering, fuel pumps, and battery management.
  • Industrial power supplies and motor control systems.
  • High-power switching applications requiring low on-state resistance and high current handling.
  • Power management in electric vehicles and hybrid vehicles.

Q & A

  1. What is the maximum drain-source voltage of the STL8N6LF6AG?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-state resistance of the STL8N6LF6AG?

    The typical on-state resistance (RDS(on)) is 21 mΩ.

  3. What is the maximum drain current of the STL8N6LF6AG?

    The maximum drain current (ID) is 32 A.

  4. What package type is used for the STL8N6LF6AG?

    The STL8N6LF6AG is packaged in a PowerFLAT™ (5x6) package.

  5. Is the STL8N6LF6AG qualified for automotive use?

    Yes, the STL8N6LF6AG is AEC-Q101 qualified, making it suitable for automotive applications.

  6. What is the power dissipation capability of the STL8N6LF6AG at Tc?

    The power dissipation capability at Tc is up to 55 W.

  7. What technology is used in the STL8N6LF6AG?

    The STL8N6LF6AG uses the advanced STripFET™ F6 technology.

  8. What are some common applications for the STL8N6LF6AG?

    Common applications include automotive systems, industrial power supplies, and high-power switching applications.

  9. How does the STL8N6LF6AG manage thermal issues?

    The PowerFLAT™ (5x6) package helps in efficient thermal management.

  10. What is the power dissipation capability of the STL8N6LF6AG at Ta?

    The power dissipation capability at Ta is up to 4.8 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1340 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.8W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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