STL8N10LF3
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STMicroelectronics STL8N10LF3

Manufacturer No:
STL8N10LF3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 100V 20A PWRFLT5X6
Delivery:
Payment:
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Product Introduction

Overview

The STL8N10LF3 is a high-performance N-channel MOSFET from STMicroelectronics, part of their STripFET III family. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The STL8N10LF3 is known for its robustness and efficiency, ensuring reliable operation in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
RDS(ON) (On-Resistance)25 mΩ (typical at VGS = 10 V)
ID (Drain Current)7.8 A (continuous at TC = 25°C)
VGS(th) (Threshold Voltage)2.5 V to 4 V
TJ (Junction Temperature)-55°C to 150°C
PackagePowerFLAT 5x6

Key Features

  • Low on-resistance (RDS(ON)) of 25 mΩ, ensuring minimal power loss.
  • High current handling capability of up to 7.8 A.
  • High voltage rating of 100 V, suitable for various power applications.
  • STripFET III technology for enhanced performance and reliability.
  • PowerFLAT 5x6 package, offering a compact and efficient design.

Applications

The STL8N10LF3 is versatile and can be used in a range of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial power management, including inverters and switching circuits.
  • Consumer electronics requiring high-efficiency power switching.

Q & A

  1. What is the maximum drain-source voltage of the STL8N10LF3?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the typical on-resistance of the STL8N10LF3?
    The typical on-resistance (RDS(ON)) is 25 mΩ at VGS = 10 V.
  3. What is the maximum continuous drain current of the STL8N10LF3?
    The maximum continuous drain current (ID) is 7.8 A at TC = 25°C.
  4. What is the threshold voltage range of the STL8N10LF3?
    The threshold voltage (VGS(th)) range is 2.5 V to 4 V.
  5. What is the junction temperature range of the STL8N10LF3?
    The junction temperature (TJ) range is -55°C to 150°C.
  6. In what package is the STL8N10LF3 available?
    The STL8N10LF3 is available in the PowerFLAT 5x6 package.
  7. What technology does the STL8N10LF3 use?
    The STL8N10LF3 uses STripFET III technology.
  8. What are some common applications of the STL8N10LF3?
    Common applications include power supplies, motor control, automotive systems, industrial power management, and consumer electronics.
  9. Where can I find detailed specifications for the STL8N10LF3?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors.
  10. Is the STL8N10LF3 suitable for high-power applications?
    Yes, the STL8N10LF3 is designed for high-power applications due to its low on-resistance and high current handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:970 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):4.3W (Ta), 70W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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