STL285N4F7AG
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STMicroelectronics STL285N4F7AG

Manufacturer No:
STL285N4F7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL285N4F7AG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. It utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, making the MOSFET highly efficient for various high-power applications. The device is packaged in a PowerFLAT 5x6 package, which is designed to optimize thermal performance and reduce the overall size of the component.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 40 V
RDS(on) (On-State Resistance) 0.9 mΩ (typ.)
ID (Drain Current) 120 A
Ptot (Total Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -40°C to 175°C
Package PowerFLAT 5x6

Key Features

  • Enhanced trench gate structure using STripFET™ F7 technology for very low on-state resistance.
  • High drain current capability of up to 120 A.
  • Automotive-grade qualification, suitable for harsh automotive environments.
  • PowerFLAT 5x6 package for improved thermal performance and reduced size.
  • Low thermal resistance and high power density.

Applications

  • Automotive systems: power steering, power windows, fuel pumps, and other high-power applications.
  • Industrial power supplies and motor control systems.
  • High-efficiency DC-DC converters.
  • Power management in electric vehicles and hybrid vehicles.

Q & A

  1. What is the typical on-state resistance of the STL285N4F7AG?

    The typical on-state resistance (RDS(on)) is 0.9 mΩ.

  2. What is the maximum drain current of the STL285N4F7AG?

    The maximum drain current (ID) is 120 A.

  3. What is the drain-source voltage rating of the STL285N4F7AG?

    The drain-source voltage (VDS) rating is 40 V.

  4. In what package is the STL285N4F7AG available?

    The STL285N4F7AG is available in a PowerFLAT 5x6 package.

  5. What is the junction temperature range for the STL285N4F7AG?

    The junction temperature range is -40°C to 175°C.

  6. Is the STL285N4F7AG suitable for automotive applications?
  7. What technology does the STL285N4F7AG use?
  8. What are some common applications for the STL285N4F7AG?
  9. How does the PowerFLAT 5x6 package benefit the STL285N4F7AG?
  10. What is the significance of low on-state resistance in the STL285N4F7AG?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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