STL22N65M5
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STMicroelectronics STL22N65M5

Manufacturer No:
STL22N65M5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 15A PWRFLAT HV
Delivery:
Payment:
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Product Introduction

Overview

The STL22N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency.

It is packaged in a PowerFLAT 8x8 HV package, which is a surface-mount technology (SMT) package, and is known for its low gate charge and input capacitance, as well as excellent switching performance. The STL22N65M5 is 100% avalanche tested, ensuring robustness and reliability in various operating conditions.

Key Specifications

Parameter Value Unit
VDS @ TJmax 710 V
RDS(on) max. 210 mΩ
ID (continuous) at TC = 25 °C 15 A
ID (continuous) at TC = 100 °C 9.5 A
IDM (pulsed) 60 A
PTOT (total power dissipation) at TC = 25 °C 110 W
VGS (gate-source voltage) ±25 V
Tstg (storage temperature range) -55 to 150 °C
Tj (operating junction temperature range) -55 to 150 °C
RthJA (thermal resistance, junction-to-case) 1.14 °C/W
RthJB (thermal resistance, junction-to-board) 45 °C/W
IAR (avalanche current, repetitive or not repetitive) 4 A
EAS (single pulse avalanche energy) 270 mJ
Coss (output capacitance) 38 pF
Crss (reverse transfer capacitance) 3.7 pF
Qg (total gate charge) 36 nC

Key Features

  • Extremely low RDS(on) of 210 mΩ, ensuring high efficiency and low power losses.
  • Low gate charge and input capacitance, which enhances switching performance.
  • Excellent switching characteristics, including fast rise and fall times.
  • 100% avalanche tested, providing robustness against transient conditions.
  • High maximum drain current of 15 A and maximum drain-source voltage of 710 V.
  • Surface-mount technology (SMT) in a PowerFLAT 8x8 HV package, suitable for compact designs.

Applications

  • Switching applications, such as power supplies, DC-DC converters, and motor control systems.
  • High-power electronic devices requiring efficient and reliable power management.
  • Aerospace and automotive systems where high voltage and current handling are necessary.
  • Industrial control systems and automation equipment.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL22N65M5?

    The maximum drain-source voltage (VDS) is 710 V.

  2. What is the typical on-resistance (RDS(on)) of the STL22N65M5?

    The typical on-resistance (RDS(on)) is 210 mΩ.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 15 A.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±25 V.

  5. What is the thermal resistance from junction to case (RthJA)?

    The thermal resistance from junction to case (RthJA) is 1.14 °C/W.

  6. What is the package type of the STL22N65M5?

    The package type is PowerFLAT 8x8 HV, which is a surface-mount technology (SMT) package.

  7. Is the STL22N65M5 100% avalanche tested?

    Yes, the STL22N65M5 is 100% avalanche tested.

  8. What are the typical applications of the STL22N65M5?

    The STL22N65M5 is typically used in switching applications, power supplies, DC-DC converters, motor control systems, and other high-power electronic devices.

  9. What is the maximum storage temperature range for the STL22N65M5?

    The maximum storage temperature range is -55 to 150 °C.

  10. What is the output capacitance (Coss) of the STL22N65M5?

    The output capacitance (Coss) is 38 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:210mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1345 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):2.8W (Ta), 110W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
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