Overview
The STL22N65M5 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh M5 vertical process technology combined with the PowerMESH horizontal layout. This device is designed to offer extremely low on-resistance, making it highly suitable for applications that require high power and superior efficiency.
It is packaged in a PowerFLAT 8x8 HV package, which is a surface-mount technology (SMT) package, and is known for its low gate charge and input capacitance, as well as excellent switching performance. The STL22N65M5 is 100% avalanche tested, ensuring robustness and reliability in various operating conditions.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ TJmax | 710 | V |
| RDS(on) max. | 210 mΩ | mΩ |
| ID (continuous) at TC = 25 °C | 15 | A |
| ID (continuous) at TC = 100 °C | 9.5 | A |
| IDM (pulsed) | 60 | A |
| PTOT (total power dissipation) at TC = 25 °C | 110 | W |
| VGS (gate-source voltage) | ±25 | V |
| Tstg (storage temperature range) | -55 to 150 | °C |
| Tj (operating junction temperature range) | -55 to 150 | °C |
| RthJA (thermal resistance, junction-to-case) | 1.14 | °C/W |
| RthJB (thermal resistance, junction-to-board) | 45 | °C/W |
| IAR (avalanche current, repetitive or not repetitive) | 4 | A |
| EAS (single pulse avalanche energy) | 270 | mJ |
| Coss (output capacitance) | 38 | pF |
| Crss (reverse transfer capacitance) | 3.7 | pF |
| Qg (total gate charge) | 36 | nC |
Key Features
- Extremely low RDS(on) of 210 mΩ, ensuring high efficiency and low power losses.
- Low gate charge and input capacitance, which enhances switching performance.
- Excellent switching characteristics, including fast rise and fall times.
- 100% avalanche tested, providing robustness against transient conditions.
- High maximum drain current of 15 A and maximum drain-source voltage of 710 V.
- Surface-mount technology (SMT) in a PowerFLAT 8x8 HV package, suitable for compact designs.
Applications
- Switching applications, such as power supplies, DC-DC converters, and motor control systems.
- High-power electronic devices requiring efficient and reliable power management.
- Aerospace and automotive systems where high voltage and current handling are necessary.
- Industrial control systems and automation equipment.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL22N65M5?
The maximum drain-source voltage (VDS) is 710 V.
- What is the typical on-resistance (RDS(on)) of the STL22N65M5?
The typical on-resistance (RDS(on)) is 210 mΩ.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 15 A.
- What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage (VGS) is ±25 V.
- What is the thermal resistance from junction to case (RthJA)?
The thermal resistance from junction to case (RthJA) is 1.14 °C/W.
- What is the package type of the STL22N65M5?
The package type is PowerFLAT 8x8 HV, which is a surface-mount technology (SMT) package.
- Is the STL22N65M5 100% avalanche tested?
Yes, the STL22N65M5 is 100% avalanche tested.
- What are the typical applications of the STL22N65M5?
The STL22N65M5 is typically used in switching applications, power supplies, DC-DC converters, motor control systems, and other high-power electronic devices.
- What is the maximum storage temperature range for the STL22N65M5?
The maximum storage temperature range is -55 to 150 °C.
- What is the output capacitance (Coss) of the STL22N65M5?
The output capacitance (Coss) is 38 pF.
