STH320N4F6-6
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STMicroelectronics STH320N4F6-6

Manufacturer No:
STH320N4F6-6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 200A H2PAK-6
Delivery:
Payment:
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Product Introduction

Overview

The STH320N4F6-6 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the 6th generation of STripFET™ F6 technology. This device features a new trench gate structure and DeepGATE™ technology, enhancing its electrical characteristics and reliability. The STH320N4F6-6 is designed to meet the demands of high-power applications, offering low on-resistance and high current handling capabilities.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
RDS(on) (On-Resistance) 1.1
ID (Continuous Drain Current) 200 A
Ptot (Total Power Dissipation) - -
TJ (Junction Temperature) -55 to 150 °C
Package H2PAK-6 -

Key Features

  • Low on-resistance (RDS(on)) of 1.1 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current (ID) of 200 A, suitable for high-power applications.
  • STripFET™ F6 technology with DeepGATE™ structure for enhanced performance and reliability.
  • H2PAK-6 package, providing good thermal dissipation and mechanical robustness.
  • Wide junction temperature range (-55°C to 150°C), ensuring operation in various environmental conditions.

Applications

  • High-power DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power factor correction (PFC) circuits.
  • Industrial power systems and automation.
  • Automotive and aerospace power management systems.

Q & A

  1. What is the drain-source voltage rating of the STH320N4F6-6?

    The drain-source voltage (VDS) rating is 40 V.

  2. What is the typical on-resistance of the STH320N4F6-6?

    The typical on-resistance (RDS(on)) is 1.1 mΩ.

  3. What is the maximum continuous drain current of the STH320N4F6-6?

    The maximum continuous drain current (ID) is 200 A.

  4. What technology is used in the STH320N4F6-6?

    The STH320N4F6-6 uses STMicroelectronics' 6th generation STripFET™ F6 technology with DeepGATE™ structure.

  5. What is the package type of the STH320N4F6-6?

    The package type is H2PAK-6.

  6. What are the typical applications of the STH320N4F6-6?

    Typical applications include high-power DC-DC converters, motor control systems, power factor correction circuits, industrial power systems, and automotive/aerospace power management.

  7. What is the junction temperature range of the STH320N4F6-6?

    The junction temperature range is -55°C to 150°C.

  8. Why is the STH320N4F6-6 suitable for high-power applications?

    It is suitable due to its low on-resistance, high continuous drain current, and robust package design.

  9. Can the STH320N4F6-6 be used in automotive applications?
  10. What are the benefits of using STripFET™ F6 technology in the STH320N4F6-6?

    The benefits include improved electrical characteristics, lower power losses, and enhanced reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13800 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-6
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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In Stock

$3.18
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Same Series
STH320N4F6-2
STH320N4F6-2
MOSFET N-CH 40V 200A H2PAK

Similar Products

Part Number STH320N4F6-6 STH320N4F6-2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 80A, 10V 1.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 15 V 13800 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package H2PAK-6 H²PAK
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab) Variant

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