STH185N10F3-6
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STMicroelectronics STH185N10F3-6

Manufacturer No:
STH185N10F3-6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 180A H2PAK-6
Delivery:
Payment:
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Product Introduction

Overview

The STH185N10F3-6 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET F3 series and is known for its high current handling and low on-resistance. It is packaged in a H2PAK-6 configuration, making it suitable for high-power applications in the automotive and industrial sectors.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)180 A
On-Resistance (Rds(on))3.9 mΩ (typical)
Power Dissipation (Pd)315 W (at Tc)
PackageH2PAK-6

Key Features

  • Automotive-grade reliability and robustness
  • High current handling capability of up to 180 A
  • Low on-resistance of 3.9 mΩ (typical)
  • High power dissipation of 315 W at Tc
  • H2PAK-6 package for efficient heat dissipation and high power density

Applications

The STH185N10F3-6 is designed for use in high-power applications, particularly in the automotive sector. It is suitable for:

  • Electric vehicle (EV) and hybrid electric vehicle (HEV) systems
  • Automotive power conversion and motor control systems
  • High-power industrial applications such as power supplies and motor drives

Q & A

  1. What is the voltage rating of the STH185N10F3-6 MOSFET?
    The voltage rating (Vds) of the STH185N10F3-6 is 100 V.
  2. What is the continuous drain current of the STH185N10F3-6?
    The continuous drain current (Id) is 180 A.
  3. What is the typical on-resistance of the STH185N10F3-6?
    The typical on-resistance (Rds(on)) is 3.9 mΩ.
  4. In what package is the STH185N10F3-6 available?
    The STH185N10F3-6 is available in a H2PAK-6 package.
  5. What are the primary applications of the STH185N10F3-6?
    The primary applications include electric vehicle (EV) and hybrid electric vehicle (HEV) systems, automotive power conversion and motor control systems, and high-power industrial applications.
  6. Is the STH185N10F3-6 still in production?
    No, the STH185N10F3-6 is no longer in production and is considered obsolete.
  7. Where can I find substitutes for the STH185N10F3-6?
    You can find substitutes on distributors' websites such as Digi-Key, Mouser, or by consulting the manufacturer's recommendations.
  8. What is the power dissipation capability of the STH185N10F3-6?
    The power dissipation capability is 315 W at Tc.
  9. Why is the H2PAK-6 package used for the STH185N10F3-6?
    The H2PAK-6 package is used for its efficient heat dissipation and high power density.
  10. Is the STH185N10F3-6 automotive-grade?
    Yes, the STH185N10F3-6 is an automotive-grade MOSFET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6665 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):315W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2PAK-6
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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Similar Products

Part Number STH185N10F3-6 STH180N10F3-6 STH185N10F3-2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 180A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V 4.5mOhm @ 60A, 10V 4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V 114.6 nC @ 10 V 114.6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6665 pF @ 25 V 6665 pF @ 25 V 6665 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 315W (Tc) 315W (Tc) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package H2PAK-6 H2PAK-6 H2Pak-2
Package / Case TO-263-7, D²Pak (6 Leads + Tab) TO-263-7, D²Pak (6 Leads + Tab) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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