Overview
The STH13N120K5-2AG is a high-performance N-Channel MOSFET produced by STMicroelectronics. This device is designed to offer exceptional electrical characteristics, making it suitable for a variety of high-power applications. It is AEC-Q101 qualified, ensuring its reliability and performance in automotive and industrial environments. The MOSFET features ultra-low on-resistance (RDS(on)) and gate charge, along with an excellent figure of merit (FoM), which enhances its efficiency and switching performance.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 1200 V |
| Continuous Drain Current (Id) | 12 A |
| Power Dissipation (Pd) | 250 W |
| On-Resistance (RDS(on)) | 690 mΩ @ 6 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | 5 V @ 100 μA |
| Package Type | H2PAK-2 |
| Avalanche Testing | 100% avalanche tested |
Key Features
- AEC-Q101 qualified for automotive applications
- Industry's lowest RDS(on) x area, enhancing efficiency and performance
- Industry's best figure of merit (FoM)
- Ultra-low gate charge for fast switching times
- 100% avalanche tested for reliability
Applications
The STH13N120K5-2AG MOSFET is suitable for various high-power applications, including:
- Automotive systems (e.g., electric vehicles, hybrid vehicles)
- Industrial power supplies and motor drives
- Renewable energy systems (e.g., solar, wind power)
- High-efficiency power conversion systems
Q & A
- What is the voltage rating of the STH13N120K5-2AG MOSFET?
The voltage rating (Vds) of the STH13N120K5-2AG MOSFET is 1200 V. - What is the continuous drain current of this MOSFET?
The continuous drain current (Id) is 12 A. - What is the power dissipation of the STH13N120K5-2AG?
The power dissipation (Pd) is 250 W. - What is the on-resistance (RDS(on)) of this MOSFET?
The on-resistance (RDS(on)) is 690 mΩ @ 6 A, 10 V. - Is the STH13N120K5-2AG AEC-Q101 qualified?
Yes, the STH13N120K5-2AG is AEC-Q101 qualified. - What is the package type of this MOSFET?
The package type is H2PAK-2. - Has the STH13N120K5-2AG been avalanche tested?
Yes, it has been 100% avalanche tested. - What are some key features of the STH13N120K5-2AG?
Key features include ultra-low RDS(on) x area, best FoM, ultra-low gate charge, and 100% avalanche testing. - In which applications is the STH13N120K5-2AG commonly used?
Common applications include automotive systems, industrial power supplies, renewable energy systems, and high-efficiency power conversion systems. - Where can I find detailed specifications for the STH13N120K5-2AG?
Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser Electronics.
