Overview
The STF10P6F6 is a P-channel Power MOSFET developed by STMicroelectronics using the STripFET F6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) across all available packages. The STF10P6F6 is part of a family of MOSFETs that include the STD10P6F6, STP10P6F6, and STU10P6F6, each available in different packages such as DPAK, TO-220FP, TO-220, and IPAK.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | -60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Drain Current (continuous) at TC = 25 °C (ID) | -10 | A |
| Drain Current (continuous) at TC = 100 °C (ID) | -7.2 | A |
| Drain Current (pulsed) (IDM) | -40 | A |
| Total Power Dissipation at TC = 25 °C (PTOT) | 30 | W |
| On-Resistance (RDS(on)) max | 0.16 | Ω |
| Package | TO-220FP |
Key Features
- Very low on-resistance (RDS(on))
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
The STF10P6F6 is primarily used in switching applications due to its low on-resistance and high avalanche ruggedness, making it suitable for high-efficiency power management and control systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STF10P6F6?
The maximum drain-source voltage (VDS) is -60 V.
- What is the typical on-resistance (RDS(on)) of the STF10P6F6?
The typical on-resistance (RDS(on)) is 0.13 Ω, with a maximum of 0.16 Ω.
- What are the available packages for the STF10P6F6?
The STF10P6F6 is available in the TO-220FP package, while other variants are available in DPAK, TO-220, and IPAK packages.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is -10 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is -40 A.
- What is the total power dissipation (PTOT) at TC = 25 °C?
The total power dissipation (PTOT) at TC = 25 °C is 30 W.
- What are the key features of the STF10P6F6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- In what types of applications is the STF10P6F6 typically used?
The STF10P6F6 is typically used in switching applications.
- What technology is used in the STF10P6F6?
The STF10P6F6 is developed using the STripFET F6 technology with a new trench gate structure.
- What is the gate-source voltage (VGS) range?
The gate-source voltage (VGS) range is ±20 V.
