Overview
The STD10P6F6 is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device is characterized by its very low on-resistance (RDS(on)) and is available in various packages including DPAK, TO-220FP, TO-220, and IPAK. The STD10P6F6 is designed to offer high performance and reliability in a range of switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | -60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | -10 | A |
| Continuous Drain Current (ID) at TC = 100°C | -7.2 | A |
| Pulsed Drain Current (IDM) | -40 | A |
| Total Dissipation at TC = 25°C | 35 (DPAK), 20 (IPAK), 30 (TO-220FP and TO-220) | W |
| On-Resistance (RDS(on)) | 0.16 Ω (max) | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 4.29 (DPAK), 7.5 (IPAK), 5 (TO-220FP and TO-220) | °C/W |
| Maximum Operating Junction Temperature (Tj) | 175 | °C |
Key Features
- Very Low On-Resistance (RDS(on)): The STD10P6F6 features a very low on-resistance, making it highly efficient in switching applications.
- Very Low Gate Charge: This MOSFET has a low gate charge, which reduces the power required for gate drive and enhances switching performance.
- High Avalanche Ruggedness: The device is designed to withstand high avalanche energy, ensuring robustness and reliability in demanding applications.
- Low Gate Drive Power Loss: The low gate charge and on-resistance contribute to reduced power loss during gate drive, making it energy-efficient.
Applications
The STD10P6F6 is suitable for a variety of switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- Automotive and industrial power management systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STD10P6F6?
The maximum drain-source voltage (VDS) is -60 V.
- What are the available package types for the STD10P6F6?
The STD10P6F6 is available in DPAK, TO-220FP, TO-220, and IPAK packages.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is -10 A.
- What is the maximum operating junction temperature (Tj) of the STD10P6F6?
The maximum operating junction temperature (Tj) is 175°C.
- What is the typical on-resistance (RDS(on)) of the STD10P6F6?
The typical on-resistance (RDS(on)) is 0.13 Ω.
- What are the key features of the STD10P6F6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- In what types of applications is the STD10P6F6 commonly used?
The STD10P6F6 is commonly used in switching applications such as power supplies, motor control, high-frequency switching circuits, and automotive and industrial power management systems.
- What is the thermal resistance junction-case (Rthj-case) for the DPAK package?
The thermal resistance junction-case (Rthj-case) for the DPAK package is 4.29 °C/W.
- What is the single pulse avalanche energy (EAS) of the STD10P6F6?
The single pulse avalanche energy (EAS) is 80 mJ.
- Is the STD10P6F6 available in environmentally compliant packages?
Yes, the STD10P6F6 is available in ECOPACK® packages, which meet various environmental compliance standards.
