STD86N3LH5
  • Share:

STMicroelectronics STD86N3LH5

Manufacturer No:
STD86N3LH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 80A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD86N3LH5 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ H5 technology. This device is designed to achieve very low on-state resistance and high current handling capabilities, making it suitable for a variety of power management applications. The MOSFET is optimized for high efficiency and reliability, ensuring robust performance in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)55 A
IDM (Pulse Drain Current)320 A
RDS(on) (On-State Resistance)Typically 1.5 mΩ at VGS = 10 V
PD (Power Dissipation)70 W
PackageDPAK (TO-252)
ComplianceRoHS Directive 2011/65/EU compliant

Key Features

  • Low on-state resistance (RDS(on)) for high efficiency
  • High current handling capability with ID up to 55 A and IDM up to 320 A
  • 100% Rg and UIS tested for reliability
  • STripFET™ H5 technology for enhanced performance
  • Compliant with RoHS Directive 2011/65/EU for environmental sustainability

Applications

The STD86N3LH5 is suitable for various power management applications, including but not limited to:

  • DC-DC converters
  • Power supplies
  • Motor control systems
  • Automotive systems
  • Industrial power management

Q & A

  1. What is the maximum drain-source voltage of the STD86N3LH5?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the STD86N3LH5?
    The continuous drain current (ID) is 55 A.
  3. What is the typical on-state resistance of the STD86N3LH5?
    The typical on-state resistance (RDS(on)) is 1.5 mΩ at VGS = 10 V.
  4. Is the STD86N3LH5 RoHS compliant?
    Yes, the STD86N3LH5 is compliant with the RoHS Directive 2011/65/EU.
  5. What is the package type of the STD86N3LH5?
    The package type is DPAK (TO-252).
  6. What technology is used in the STD86N3LH5?
    The STD86N3LH5 uses STMicroelectronics' STripFET™ H5 technology.
  7. What are some common applications for the STD86N3LH5?
    Common applications include DC-DC converters, power supplies, motor control systems, automotive systems, and industrial power management.
  8. What is the pulse drain current rating of the STD86N3LH5?
    The pulse drain current (IDM) is up to 320 A.
  9. What is the power dissipation rating of the STD86N3LH5?
    The power dissipation (PD) is 70 W.
  10. Has the STD86N3LH5 been tested for reliability?
    Yes, the STD86N3LH5 has been 100% Rg and UIS tested for reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.50
371

Please send RFQ , we will respond immediately.

Similar Products

Part Number STD86N3LH5 STD85N3LH5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 40A, 10V 5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V 14 nC @ 5 V
Vgs (Max) ±20V ±22V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V 1850 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 70W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STM32G474MET6
STM32G474MET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 80LQFP
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24