STD86N3LH5
  • Share:

STMicroelectronics STD86N3LH5

Manufacturer No:
STD86N3LH5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 80A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD86N3LH5 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ H5 technology. This device is designed to achieve very low on-state resistance and high current handling capabilities, making it suitable for a variety of power management applications. The MOSFET is optimized for high efficiency and reliability, ensuring robust performance in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)55 A
IDM (Pulse Drain Current)320 A
RDS(on) (On-State Resistance)Typically 1.5 mΩ at VGS = 10 V
PD (Power Dissipation)70 W
PackageDPAK (TO-252)
ComplianceRoHS Directive 2011/65/EU compliant

Key Features

  • Low on-state resistance (RDS(on)) for high efficiency
  • High current handling capability with ID up to 55 A and IDM up to 320 A
  • 100% Rg and UIS tested for reliability
  • STripFET™ H5 technology for enhanced performance
  • Compliant with RoHS Directive 2011/65/EU for environmental sustainability

Applications

The STD86N3LH5 is suitable for various power management applications, including but not limited to:

  • DC-DC converters
  • Power supplies
  • Motor control systems
  • Automotive systems
  • Industrial power management

Q & A

  1. What is the maximum drain-source voltage of the STD86N3LH5?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the STD86N3LH5?
    The continuous drain current (ID) is 55 A.
  3. What is the typical on-state resistance of the STD86N3LH5?
    The typical on-state resistance (RDS(on)) is 1.5 mΩ at VGS = 10 V.
  4. Is the STD86N3LH5 RoHS compliant?
    Yes, the STD86N3LH5 is compliant with the RoHS Directive 2011/65/EU.
  5. What is the package type of the STD86N3LH5?
    The package type is DPAK (TO-252).
  6. What technology is used in the STD86N3LH5?
    The STD86N3LH5 uses STMicroelectronics' STripFET™ H5 technology.
  7. What are some common applications for the STD86N3LH5?
    Common applications include DC-DC converters, power supplies, motor control systems, automotive systems, and industrial power management.
  8. What is the pulse drain current rating of the STD86N3LH5?
    The pulse drain current (IDM) is up to 320 A.
  9. What is the power dissipation rating of the STD86N3LH5?
    The power dissipation (PD) is 70 W.
  10. Has the STD86N3LH5 been tested for reliability?
    Yes, the STD86N3LH5 has been 100% Rg and UIS tested for reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.50
371

Please send RFQ , we will respond immediately.

Similar Products

Part Number STD86N3LH5 STD85N3LH5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 40A, 10V 5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V 14 nC @ 5 V
Vgs (Max) ±20V ±22V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V 1850 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 70W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
TEA3718SDP
TEA3718SDP
STMicroelectronics
IC MOTOR DRVR BIPOLAR 16POWERDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223