STD85N10F7AG
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STMicroelectronics STD85N10F7AG

Manufacturer No:
STD85N10F7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 70A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD85N10F7AG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. This device utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This technology results in very low on-state resistance, making the MOSFET highly efficient for various power management applications. The STD85N10F7AG is packaged in a DPAK (TO-252) package, which is suitable for high-power applications requiring good thermal dissipation.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-State Resistance) 0.0085 Ω
ID (Continuous Drain Current) 70 A
Ptot (Total Power Dissipation) 85 W
TJ (Junction Temperature) -40 to 175 °C
Package DPAK (TO-252) -

Key Features

  • Utilizes STripFET™ F7 technology with an enhanced trench gate structure for very low on-state resistance.
  • High continuous drain current of 70 A.
  • High total power dissipation of 85 W.
  • A wide junction temperature range from -40°C to 175°C.
  • Automotive-grade, making it suitable for demanding automotive applications.
  • DPAK (TO-252) package for good thermal dissipation and high power handling.

Applications

  • Automotive systems, including power steering, power windows, and fuel pumps.
  • Industrial power supplies and motor control systems.
  • High-power DC-DC converters and switch-mode power supplies.
  • Electric vehicle (EV) and hybrid electric vehicle (HEV) systems.
  • General-purpose power switching applications requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage of the STD85N10F7AG?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the STD85N10F7AG?

    The typical on-state resistance (RDS(on)) is 0.0085 Ω.

  3. What is the continuous drain current rating of the STD85N10F7AG?

    The continuous drain current (ID) is 70 A.

  4. What is the total power dissipation of the STD85N10F7AG?

    The total power dissipation (Ptot) is 85 W.

  5. What is the junction temperature range of the STD85N10F7AG?

    The junction temperature range is from -40°C to 175°C.

  6. In what package is the STD85N10F7AG available?

    The STD85N10F7AG is available in a DPAK (TO-252) package.

  7. Is the STD85N10F7AG suitable for automotive applications?
  8. What are some common applications of the STD85N10F7AG?
  9. What technology does the STD85N10F7AG use?
  10. Why is the STD85N10F7AG efficient for power management?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$2.36
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