STD47N10F7AG
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STMicroelectronics STD47N10F7AG

Manufacturer No:
STD47N10F7AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 45A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD47N10F7AG is an automotive-grade N-channel Power MOSFET produced by STMicroelectronics. It utilizes the advanced STripFET F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching. This MOSFET is packaged in a DPAK (TO-252) package, making it suitable for a variety of high-performance applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
RDS(on) (On-State Resistance)0.0125 Ω (typ.)
ID (Drain Current)45 A
PackageDPAK (TO-252)
Gate Charge (Qg)Reduced for faster switching
Internal CapacitanceReduced for improved performance

Key Features

  • Advanced STripFET F7 technology with enhanced trench gate structure.
  • Very low on-state resistance (RDS(on)) of 0.0125 Ω (typ.).
  • Reduced internal capacitance and gate charge for faster switching.
  • Automotive-grade reliability and performance.
  • DPAK (TO-252) package for efficient heat dissipation and compact design.

Applications

  • Automotive systems: power management, motor control, and battery management.
  • Industrial power supplies and converters.
  • High-efficiency DC-DC converters.
  • Motor drives and control systems.
  • Power factor correction (PFC) circuits.

Q & A

  1. What is the maximum drain-source voltage of the STD47N10F7AG?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the typical on-state resistance of the STD47N10F7AG?
    The typical on-state resistance (RDS(on)) is 0.0125 Ω.
  3. What is the maximum drain current of the STD47N10F7AG?
    The maximum drain current (ID) is 45 A.
  4. In what package is the STD47N10F7AG available?
    The STD47N10F7AG is available in a DPAK (TO-252) package.
  5. What technology does the STD47N10F7AG use?
    The STD47N10F7AG uses the advanced STripFET F7 technology.
  6. Why is the gate charge reduced in the STD47N10F7AG?
    The gate charge is reduced to enable faster switching.
  7. What are some common applications of the STD47N10F7AG?
    Common applications include automotive systems, industrial power supplies, high-efficiency DC-DC converters, motor drives, and power factor correction (PFC) circuits.
  8. Is the STD47N10F7AG automotive-grade?
    Yes, the STD47N10F7AG is an automotive-grade component.
  9. How does the STripFET F7 technology improve performance?
    The STripFET F7 technology improves performance by reducing on-state resistance, internal capacitance, and gate charge, leading to faster and more efficient switching.
  10. What are the benefits of using a DPAK package for the STD47N10F7AG?
    The DPAK package provides efficient heat dissipation and a compact design, making it suitable for high-performance applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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