Overview
The STD25NF20 is an automotive-grade N-channel enhancement mode Power MOSFET produced by STMicroelectronics. This device benefits from STMicroelectronics' unique “single feature size“ strip-based process, which enhances manufacturing reproducibility and results in a transistor with high packing density, low on-resistance, rugged avalanche characteristics, and low gate charge. It is designed for automotive applications and is AEC-Q101 qualified, making it suitable for demanding environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 200 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Continuous drain current (ID) at TC = 25 °C | 18 | A |
| Continuous drain current (ID) at TC = 100 °C | 11 | A |
| Pulsed drain current (IDM) | 72 | A |
| Total dissipation at TC = 25 °C (PTOT) | 110 | W |
| Thermal resistance junction-case (Rthj-case) | 1.38 | °C/W |
| Thermal resistance junction-pcb (Rthj-pcb) | 50 | °C/W |
| Static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 10 A | 0.10 - 0.125 | Ω |
| Gate threshold voltage (VGS(th)) | 2 - 4 | V |
| Total gate charge (Qg) at VDD = 160 V, ID = 20 A, VGS = 10 V | 28 - 39 | nC |
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- Extremely low gate charge
- Exceptional dv/dt capability
- Low gate input resistance
- 100% avalanche tested
Applications
The STD25NF20 is primarily used in switching applications within the automotive sector. Its robust design and compliance with automotive standards make it suitable for a variety of automotive systems that require high reliability and performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD25NF20?
The maximum drain-source voltage (VDS) is 200 V.
- What is the continuous drain current (ID) at 25 °C for the STD25NF20?
The continuous drain current (ID) at 25 °C is 18 A.
- Is the STD25NF20 AEC-Q101 qualified?
Yes, the STD25NF20 is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the typical on-resistance (RDS(on)) of the STD25NF20?
The typical on-resistance (RDS(on)) is 0.10 Ω at VGS = 10 V and ID = 10 A.
- What is the total gate charge (Qg) of the STD25NF20?
The total gate charge (Qg) is 28 - 39 nC at VDD = 160 V, ID = 20 A, and VGS = 10 V.
- What is the thermal resistance junction-case (Rthj-case) of the STD25NF20?
The thermal resistance junction-case (Rthj-case) is 1.38 °C/W.
- What package type is the STD25NF20 available in?
The STD25NF20 is available in a DPAK (TO-252) package.
- What are the key features of the STD25NF20?
The key features include extremely low gate charge, exceptional dv/dt capability, low gate input resistance, and 100% avalanche testing.
- What are the typical applications of the STD25NF20?
The STD25NF20 is typically used in switching applications within the automotive sector.
- What is the storage temperature range for the STD25NF20?
The storage temperature range is -55 to 175 °C.
