STD18NF03L
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STMicroelectronics STD18NF03L

Manufacturer No:
STD18NF03L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 17A DPAK
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STD18NF03L is a high-performance N-Channel Power MOSFET developed by STMicroelectronics using their advanced STripFET II process. This technology is designed to minimize input capacitance and gate charge, enhancing the device's switching performance and efficiency. The MOSFET is packaged in a DPAK (TO-252) surface mount package, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current at Tc)17 A
RDS(on) (On-State Resistance)0.038 Ω (typical)
PD (Power Dissipation at Tc)30 W
PackageDPAK (TO-252)

Key Features

  • Low on-state resistance (RDS(on)) of 0.038 Ω (typical), reducing power losses.
  • High continuous drain current (ID) of 17 A at Tc.
  • Advanced STripFET II technology for improved switching performance and reduced gate charge.
  • Compact DPAK (TO-252) package for efficient heat dissipation and space-saving designs.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Aerospace and defense applications requiring high reliability.
  • Automotive systems, including battery management and power distribution.

Q & A

  1. What is the maximum drain-source voltage of the STD18NF03L?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-state resistance of the STD18NF03L?
    The typical on-state resistance (RDS(on)) is 0.038 Ω.
  3. What is the continuous drain current rating of the STD18NF03L at Tc?
    The continuous drain current (ID) at Tc is 17 A.
  4. What package type is the STD18NF03L available in?
    The STD18NF03L is available in a DPAK (TO-252) surface mount package.
  5. What technology is used in the STD18NF03L?
    The STD18NF03L uses STMicroelectronics' advanced STripFET II process.
  6. What are some common applications for the STD18NF03L?
    Common applications include power supplies, motor control systems, industrial automation, aerospace, and automotive systems.
  7. What is the power dissipation rating of the STD18NF03L at Tc?
    The power dissipation rating (PD) at Tc is 30 W.
  8. Where can I find detailed specifications for the STD18NF03L?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website, Digi-Key, and other electronic component distributors.
  9. Is the STD18NF03L suitable for high-frequency switching applications?
    Yes, the STD18NF03L is suitable for high-frequency switching applications due to its low gate charge and on-state resistance.
  10. What are the benefits of using the STripFET II technology in the STD18NF03L?
    The STripFET II technology reduces input capacitance and gate charge, enhancing switching performance and efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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