Overview
The STD140N6F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device features an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it ideal for high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STD140N6F7 | |
| VDS (Drain-source voltage) | 60 | V |
| VGS (Gate-source voltage) | ±20 | V |
| ID (Continuous drain current at Tcase = 25 °C) | 80 | A |
| IDM (Pulsed drain current) | 320 | A |
| PTOT (Total power dissipation at Tcase = 25 °C) | 134 | W |
| RDS(on) (Static drain-source on-resistance at VGS = 10 V, ID = 40 A) | 3.1 (typ.), 3.8 (max.) | mΩ |
| EAS (Single pulse avalanche energy) | 200 | mJ |
| Tstg (Storage temperature range) | -55 to 175 | °C |
| Tj (Operating junction temperature range) | -55 to 175 | °C |
| Package | DPAK (TO-252) |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 3.1 mΩ and a maximum value of 3.8 mΩ at VGS = 10 V and ID = 40 A.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness.
- Enhanced trench gate structure for reduced internal capacitance and gate charge, enabling faster switching times.
Applications
- Switching applications, including power supplies, DC-DC converters, and motor control systems.
- High-performance power management systems requiring low on-state resistance and fast switching times.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD140N6F7?
The maximum drain-source voltage (VDS) is 60 V.
- What is the typical on-state resistance (RDS(on)) of the STD140N6F7?
The typical on-state resistance (RDS(on)) is 3.1 mΩ at VGS = 10 V and ID = 40 A.
- What is the maximum continuous drain current (ID) of the STD140N6F7 at Tcase = 25 °C?
The maximum continuous drain current (ID) is 80 A at Tcase = 25 °C.
- What is the package type of the STD140N6F7?
The package type is DPAK (TO-252).
- What are the key features of the STD140N6F7?
The key features include among the lowest RDS(on) on the market, excellent FoM, low Crss/Ciss ratio for EMI immunity, high avalanche ruggedness, and an enhanced trench gate structure.
- What are the typical applications of the STD140N6F7?
The typical applications include switching applications such as power supplies, DC-DC converters, and motor control systems.
- What is the storage temperature range of the STD140N6F7?
The storage temperature range is -55 to 175 °C.
- What is the single pulse avalanche energy (EAS) of the STD140N6F7?
The single pulse avalanche energy (EAS) is 200 mJ.
- What is the thermal resistance junction-pcb (Rthj-pcb) of the STD140N6F7?
The thermal resistance junction-pcb (Rthj-pcb) is 50 °C/W when mounted on an FR-4 board.
- How does the STD140N6F7 improve EMI immunity?
The STD140N6F7 improves EMI immunity through its low Crss/Ciss ratio.
