STD12N50M2
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STMicroelectronics STD12N50M2

Manufacturer No:
STD12N50M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 500V 10A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD12N50M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding switching applications. The MOSFET is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
Order Code STD12N50M2
VDS (Drain-Source Voltage) 500 V
RDS(on) (On-Resistance) 0.38 Ω (max), 0.325 Ω (typ.) Ω
ID (Drain Current, continuous at TC = 25 °C) 10 A
ID (Drain Current, continuous at TC = 100 °C) 7 A
IDM (Drain Current, pulsed) 40 A
PTOT (Total Power Dissipation at TC = 25 °C) 85 W
VGS (Gate-Source Voltage) ±30 V
Tj (Operating Junction Temperature Range) -55 to 150 °C
RthJC (Thermal Resistance, Junction-to-Case) 1.47 °C/W
RthJA (Thermal Resistance, Junction-to-Ambient) 50 °C/W
Coss (Output Capacitance) 33 pF pF
Qg (Total Gate Charge) 15 nC nC

Key Features

  • Extremely low gate charge for efficient switching.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested for reliability.
  • Zener-protected gate for enhanced robustness.
  • Low on-resistance and optimized switching characteristics.
  • Available in environmentally compliant ECOPACK packages.

Applications

  • Switching applications, including high-efficiency converters.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD12N50M2?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance (RDS(on)) of the STD12N50M2?

    The typical on-resistance (RDS(on)) is 0.325 Ω.

  3. What is the continuous drain current (ID) at TC = 25 °C?

    The continuous drain current (ID) at TC = 25 °C is 10 A.

  4. What is the total gate charge (Qg) of the STD12N50M2?

    The total gate charge (Qg) is 15 nC.

  5. What is the thermal resistance (RthJC) from junction to case?

    The thermal resistance (RthJC) from junction to case is 1.47 °C/W.

  6. What are the key features of the STD12N50M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected gate.

  7. In which package is the STD12N50M2 available?

    The STD12N50M2 is available in a DPAK (TO-252) package.

  8. What are the typical applications of the STD12N50M2?

    The typical applications include switching applications, power supplies, DC-DC converters, motor control, and industrial and automotive power management systems.

  9. What is the operating junction temperature range of the STD12N50M2?

    The operating junction temperature range is -55 to 150 °C.

  10. Is the STD12N50M2 environmentally compliant?

    Yes, the STD12N50M2 is available in environmentally compliant ECOPACK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD12N50M2 STD16N50M2 STD12N60M2 STD11N50M2 STD12N50DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 600 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 13A (Tc) 9A (Tc) 8A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5A, 10V 280mOhm @ 6.5A, 10V 450mOhm @ 4.5A, 10V 530mOhm @ 4A, 10V 350mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 19.5 nC @ 10 V 16 nC @ 10 V 12 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±30V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 100 V 710 pF @ 100 V 538 pF @ 100 V 395 pF @ 100 V 628 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 85W (Tc) 110W (Tc) 85W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK TO-252, (D-Pak) DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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