STB76NF75
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STMicroelectronics STB76NF75

Manufacturer No:
STB76NF75
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 80A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB76NF75 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, known for its advanced technology and high efficiency. This MOSFET is designed to meet the demands of high-power applications, offering low on-resistance and high current handling capabilities.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 75 V
RDS(on) (On-Resistance) 0.0095 Ω
ID (Drain Current) 80 A
Ptot (Total Power Dissipation) Varies with package and conditions W
TJ (Junction Temperature) -55 to 150 °C
Package D2PAK

Key Features

  • Low On-Resistance: The STB76NF75 features a low on-resistance of 0.0095 Ω, which minimizes energy losses and improves overall efficiency.
  • High Current Capability: It can handle a high drain current of up to 80 A, making it suitable for high-power applications.
  • Advanced Technology: Utilizes STMicroelectronics' STripFET II technology, which enhances performance and reliability.
  • High Junction Temperature: The MOSFET can operate over a wide junction temperature range from -55°C to 150°C.
  • Compact Package: Available in the D2PAK package, which is compact and suitable for various applications where space is limited.

Applications

  • Power Supplies: Suitable for use in high-efficiency power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Ideal for motor control applications due to its high current handling and low on-resistance.
  • Industrial Automation: Used in various industrial automation systems where high power and efficiency are required.
  • Automotive Systems: Can be used in automotive systems that demand high reliability and performance.
  • Renewable Energy Systems: Suitable for use in solar and wind power systems to optimize energy conversion efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STB76NF75?

    The maximum drain-source voltage (VDS) is 75 V.

  2. What is the typical on-resistance of the STB76NF75?

    The typical on-resistance (RDS(on)) is 0.0095 Ω.

  3. What is the maximum drain current of the STB76NF75?

    The maximum drain current (ID) is 80 A.

  4. In what package is the STB76NF75 available?

    The STB76NF75 is available in the D2PAK package.

  5. What is the junction temperature range of the STB76NF75?

    The junction temperature range is from -55°C to 150°C.

  6. What technology does the STB76NF75 use?

    The STB76NF75 uses STMicroelectronics' STripFET II technology.

  7. Is the STB76NF75 suitable for high-power applications?

    Yes, it is designed for high-power applications due to its low on-resistance and high current handling capabilities.

  8. Can the STB76NF75 be used in automotive systems?

    Yes, it can be used in automotive systems that require high reliability and performance.

  9. What are some common applications of the STB76NF75?

    Common applications include power supplies, motor control, industrial automation, and renewable energy systems.

  10. Where can I find detailed specifications for the STB76NF75?

    Detailed specifications can be found on the official STMicroelectronics website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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