STB37N60DM2AG
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STMicroelectronics STB37N60DM2AG

Manufacturer No:
STB37N60DM2AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 28A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB37N60DM2AG is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh™ DM2 fast recovery diode series. This device is designed to meet the demands of high-efficiency converters and is particularly suited for bridge topologies and ZVS (Zero Voltage Switching) phase-shift converters. It is AEC-Q101 qualified, making it suitable for automotive applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 28 A
RDS(on) (On-Resistance) 0.094 Ω
VGS(th) (Threshold Voltage) 2-4 V
Qrr (Recovery Charge) Very Low -
trr (Recovery Time) Very Low -
Package D2PAK -
Operating Temperature Range -40 to 150 °C

Key Features

  • Designed for automotive applications and AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance (RDS(on)).
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

Applications

  • High-efficiency converters.
  • Bridge topologies.
  • ZVS (Zero Voltage Switching) phase-shift converters.
  • Automotive applications.
  • SMPS (Switch-Mode Power Supplies).
  • Data centers and solar microinverters.

Q & A

  1. What is the maximum drain-source voltage of the STB37N60DM2AG?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STB37N60DM2AG?

    The typical on-resistance (RDS(on)) is 0.094 Ω.

  3. Is the STB37N60DM2AG suitable for automotive applications?
  4. What package type is the STB37N60DM2AG available in?

    The STB37N60DM2AG is available in a D2PAK package.

  5. What are the key features of the STB37N60DM2AG?

    Key features include fast-recovery body diode, extremely low gate charge and input capacitance, low on-resistance, 100% avalanche tested, high dv/dt ruggedness, and Zener protection.

  6. What are some common applications of the STB37N60DM2AG?

    Common applications include high-efficiency converters, bridge topologies, ZVS phase-shift converters, automotive applications, SMPS, and data centers and solar microinverters.

  7. What is the operating temperature range of the STB37N60DM2AG?

    The operating temperature range is -40 to 150°C.

  8. Does the STB37N60DM2AG have any special protection features?
  9. What is the significance of the MDmesh™ DM2 series?

    The MDmesh™ DM2 series is known for its fast recovery diode and low recovery charge and time, making it ideal for high-efficiency applications.

  10. Where can I find more detailed specifications and resources for the STB37N60DM2AG?

    You can find detailed specifications and resources on the STMicroelectronics official website and through distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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