STB32NM50N
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STMicroelectronics STB32NM50N

Manufacturer No:
STB32NM50N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 500V 22A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB32NM50N is a revolutionary N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device combines a vertical structure with the company's strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly suitable for the most demanding high-efficiency converters, particularly in applications requiring minimal switching losses and high thermal efficiency.

Key Specifications

Parameter Value
Part Number STB32NM50N
Marketing Status Active
Package D2PAK
Drain-Source Voltage (Vds) 500 V
Continuous Drain Current (Id) 22 A
Pulse Drain Current (Idm) 88 A
On-Resistance (Rds(on)) 0.1 Ω (typ.)
Power Dissipation (Pd) 190 W
Operating Temperature Range -55°C to 150°C
RoHS Compliance Ecopack2

Key Features

  • Low on-resistance and gate charge, making it ideal for high-efficiency converters.
  • 100% avalanche tested, ensuring robustness and reliability.
  • Low input capacitance and gate charge, reducing switching losses.
  • Low gate input resistance, enhancing control over the device.
  • Zener-protected, providing additional protection against voltage spikes.

Applications

The STB32NM50N is particularly suited for various high-efficiency power conversion applications, including:

  • Flyback converters.
  • LED lighting systems.
  • Switch-mode power supplies (SMPS).
  • Data centers and solar microinverters.
  • Industrial and automotive applications.

Q & A

  1. What is the part number of this Power MOSFET?

    The part number is STB32NM50N.

  2. What is the drain-source voltage (Vds) of the STB32NM50N?

    The drain-source voltage (Vds) is 500 V.

  3. What is the continuous drain current (Id) of the STB32NM50N?

    The continuous drain current (Id) is 22 A.

  4. What is the on-resistance (Rds(on)) of the STB32NM50N?

    The on-resistance (Rds(on)) is typically 0.1 Ω.

  5. Is the STB32NM50N 100% avalanche tested?

    Yes, the STB32NM50N is 100% avalanche tested.

  6. What package type is the STB32NM50N available in?

    The STB32NM50N is available in the D2PAK package.

  7. What are some typical applications of the STB32NM50N?

    Typical applications include flyback converters, LED lighting, SMPS, data centers, and solar microinverters.

  8. Is the STB32NM50N RoHS compliant?

    Yes, the STB32NM50N is RoHS compliant with an Ecopack2 grade.

  9. What is the operating temperature range of the STB32NM50N?

    The operating temperature range is -55°C to 150°C.

  10. Does the STB32NM50N have any additional protection features?

    Yes, it is Zener-protected, providing additional protection against voltage spikes.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1973 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP32NM50N
STP32NM50N
MOSFET N CH 500V 22A TO-220
STB32NM50N
STB32NM50N
MOSFET N CH 500V 22A D2PAK
STW32NM50N
STW32NM50N
MOSFET N CH 500V 22A TO-247

Similar Products

Part Number STB32NM50N STB30NM50N
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 11A, 10V 115mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.5 nC @ 10 V 94 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1973 pF @ 50 V 2740 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 190W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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