Overview
The SCTWA90N65G2V-4 is a high-performance silicon carbide (SiC) Power MOSFET developed by STMicroelectronics. This device leverages ST's advanced and innovative 2nd generation SiC MOSFET technology, offering superior efficiency and reliability in various power applications. The SCTWA90N65G2V-4 is housed in an HiP247-4 package, which is designed to provide excellent thermal performance and ease of use in high-power systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 650 | V |
| ID (Drain Current) | 119 | A |
| RDS(on) (On-Resistance) | 18 | mΩ |
| Ptot (Total Power Dissipation) | - | - |
| TJ (Junction Temperature) | -150 to 175 | °C |
| Package | HiP247-4 | - |
Key Features
- High Voltage and Current Capability: The SCTWA90N65G2V-4 operates at 650 V with a drain current of 119 A, making it suitable for high-power applications.
- Low On-Resistance: With a typical on-resistance of 18 mΩ, this MOSFET minimizes power losses and enhances system efficiency.
- Advanced SiC Technology: Utilizes ST's 2nd generation SiC MOSFET technology, ensuring high reliability and performance.
- HiP247-4 Package: The package design provides excellent thermal management and ease of use in high-power systems.
- Wide Junction Temperature Range: Operates from -150°C to 175°C, making it versatile for various environmental conditions.
Applications
- Power Supplies: Suitable for high-power DC-DC converters and power supplies due to its high voltage and current handling capabilities.
- Motor Drives: Ideal for motor drive applications requiring high efficiency and reliability.
- Renewable Energy Systems: Can be used in solar and wind power systems to improve overall system efficiency.
- Electric Vehicles: Applicable in electric vehicle charging systems and onboard power electronics.
- Industrial Power Systems: Used in various industrial power systems where high power density and efficiency are required.
Q & A
- What is the maximum drain-source voltage of the SCTWA90N65G2V-4?
The maximum drain-source voltage is 650 V.
- What is the typical on-resistance of the SCTWA90N65G2V-4?
The typical on-resistance is 18 mΩ.
- What package is the SCTWA90N65G2V-4 available in?
The device is housed in an HiP247-4 package.
- What is the maximum drain current of the SCTWA90N65G2V-4?
The maximum drain current is 119 A.
- What is the junction temperature range of the SCTWA90N65G2V-4?
The junction temperature range is from -150°C to 175°C.
- What technology is used in the SCTWA90N65G2V-4?
The device uses ST's 2nd generation SiC MOSFET technology.
- In which applications is the SCTWA90N65G2V-4 commonly used?
It is commonly used in power supplies, motor drives, renewable energy systems, electric vehicles, and industrial power systems.
- Why is the HiP247-4 package beneficial for this MOSFET?
The HiP247-4 package provides excellent thermal management and ease of use in high-power systems.
- How does the SCTWA90N65G2V-4 improve system efficiency?
It improves system efficiency through its low on-resistance and high voltage and current handling capabilities.
- Is the SCTWA90N65G2V-4 suitable for high-power DC-DC converters?
Yes, it is suitable for high-power DC-DC converters due to its high voltage and current handling capabilities.
