SCTWA60N120G2-4
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STMicroelectronics SCTWA60N120G2-4

Manufacturer No:
SCTWA60N120G2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SILICON CARBIDE POWER MOSFET 120
Delivery:
Payment:
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Product Introduction

Overview

The SCTWA60N120G2-4 is a silicon carbide (SiC) power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is designed to offer an optimum trade-off between conduction and switching losses, making it highly efficient for various high-power applications. The SCTWA60N120G2-4 features remarkably low on-resistance per unit area and excellent switching performance, with switching losses that are almost independent of junction temperature.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1200 V
ID (Continuous Drain Current)35 A
RDS(on) (On-Resistance)Low on-resistance per unit area
PackageTO-247-4
Technology2nd generation SiC MOSFET
Temperature Range-40°C to 150°C (Junction Temperature)

Key Features

  • Advanced 2nd generation SiC MOSFET technology for high efficiency and reliability.
  • Low on-resistance per unit area, reducing conduction losses.
  • Excellent switching performance with minimal variation of switching losses across different junction temperatures.
  • Automotive-grade, suitable for high-reliability applications.
  • TO-247-4 package for robust and reliable mounting.

Applications

The SCTWA60N120G2-4 is particularly suited for high-power density applications in both industrial and automotive sectors. Some specific use cases include:

  • Electric vehicles and hybrid electric vehicles.
  • Industrial power supplies and converters.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-efficiency motor drives.

Q & A

  1. What is the maximum drain-source voltage of the SCTWA60N120G2-4?
    The maximum drain-source voltage is 1200 V.
  2. What is the continuous drain current rating of the SCTWA60N120G2-4?
    The continuous drain current rating is 35 A.
  3. What package type is used for the SCTWA60N120G2-4?
    The package type is TO-247-4.
  4. What technology is used in the SCTWA60N120G2-4?
    The device uses ST’s advanced 2nd generation SiC MOSFET technology.
  5. What are the key benefits of using the SCTWA60N120G2-4?
    The key benefits include low on-resistance, excellent switching performance, and high reliability.
  6. What are some typical applications for the SCTWA60N120G2-4?
    Typical applications include electric vehicles, industrial power supplies, renewable energy systems, and high-efficiency motor drives.
  7. Is the SCTWA60N120G2-4 suitable for automotive applications?
    Yes, it is automotive-grade and suitable for high-reliability automotive applications.
  8. What is the operating temperature range for the SCTWA60N120G2-4?
    The operating temperature range is -40°C to 150°C (junction temperature).
  9. How does the SCTWA60N120G2-4 handle switching losses?
    The switching losses are almost independent of junction temperature.
  10. Where can I find more detailed specifications and datasheets for the SCTWA60N120G2-4?
    You can find detailed specifications and datasheets on STMicroelectronics’ official website, as well as on distributor websites like Digi-Key and LCSC.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1969 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):388W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
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