SCTWA60N120G2-4
  • Share:

STMicroelectronics SCTWA60N120G2-4

Manufacturer No:
SCTWA60N120G2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SILICON CARBIDE POWER MOSFET 120
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SCTWA60N120G2-4 is a silicon carbide (SiC) power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is designed to offer an optimum trade-off between conduction and switching losses, making it highly efficient for various high-power applications. The SCTWA60N120G2-4 features remarkably low on-resistance per unit area and excellent switching performance, with switching losses that are almost independent of junction temperature.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1200 V
ID (Continuous Drain Current)35 A
RDS(on) (On-Resistance)Low on-resistance per unit area
PackageTO-247-4
Technology2nd generation SiC MOSFET
Temperature Range-40°C to 150°C (Junction Temperature)

Key Features

  • Advanced 2nd generation SiC MOSFET technology for high efficiency and reliability.
  • Low on-resistance per unit area, reducing conduction losses.
  • Excellent switching performance with minimal variation of switching losses across different junction temperatures.
  • Automotive-grade, suitable for high-reliability applications.
  • TO-247-4 package for robust and reliable mounting.

Applications

The SCTWA60N120G2-4 is particularly suited for high-power density applications in both industrial and automotive sectors. Some specific use cases include:

  • Electric vehicles and hybrid electric vehicles.
  • Industrial power supplies and converters.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-efficiency motor drives.

Q & A

  1. What is the maximum drain-source voltage of the SCTWA60N120G2-4?
    The maximum drain-source voltage is 1200 V.
  2. What is the continuous drain current rating of the SCTWA60N120G2-4?
    The continuous drain current rating is 35 A.
  3. What package type is used for the SCTWA60N120G2-4?
    The package type is TO-247-4.
  4. What technology is used in the SCTWA60N120G2-4?
    The device uses ST’s advanced 2nd generation SiC MOSFET technology.
  5. What are the key benefits of using the SCTWA60N120G2-4?
    The key benefits include low on-resistance, excellent switching performance, and high reliability.
  6. What are some typical applications for the SCTWA60N120G2-4?
    Typical applications include electric vehicles, industrial power supplies, renewable energy systems, and high-efficiency motor drives.
  7. Is the SCTWA60N120G2-4 suitable for automotive applications?
    Yes, it is automotive-grade and suitable for high-reliability automotive applications.
  8. What is the operating temperature range for the SCTWA60N120G2-4?
    The operating temperature range is -40°C to 150°C (junction temperature).
  9. How does the SCTWA60N120G2-4 handle switching losses?
    The switching losses are almost independent of junction temperature.
  10. Where can I find more detailed specifications and datasheets for the SCTWA60N120G2-4?
    You can find detailed specifications and datasheets on STMicroelectronics’ official website, as well as on distributor websites like Digi-Key and LCSC.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 18 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1969 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):388W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
0 Remaining View Similar

In Stock

$32.24
19

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP