Overview
The BDW94C is a PNP epitaxial silicon power Darlington transistor manufactured by STMicroelectronics. It is designed for use in power linear and switching applications. This transistor is part of a complementary pair, with the BDW93C being its NPN counterpart. The BDW94C is housed in a TO-220 plastic package, making it suitable for a variety of industrial and power management applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 100 | V |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector Current (IC) | 12 | A |
| Collector Peak Current (ICM) | 15 | A |
| Base Current (IB) | 0.2 | A |
| Total Power Dissipation at Tc ≤ 25°C (Ptot) | 80 | W |
| Maximum Operating Junction Temperature (Tj) | 150 | °C |
| Storage Temperature (Tstg) | -65 to 150 | °C |
| Thermal Resistance Junction-case (Rthj-case) | 1.56 | °C/W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2-3 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | 2.5-4 | V |
| DC Current Gain (hFE) | 1000-750-100 |
Key Features
- Monolithic Darlington configuration for high current gain.
- Integrated antiparallel collector-emitter diode for protection.
- Designed for general-purpose amplifier and low-speed switching applications.
- High collector-emitter sustaining voltage (VCEO(sus)) of up to 100 V.
- Low collector-emitter saturation voltage (VCE(sat)) of up to 3 V.
- Built-in base-emitter shunt resistor.
- TO-220 plastic package for easy mounting and heat dissipation.
Applications
- Power linear and switching applications in industrial equipment.
- General-purpose amplifiers.
- Low-speed switching circuits.
- Power management systems requiring high current handling.
- Automotive and industrial control systems.
Q & A
- What is the maximum collector current of the BDW94C transistor?
The maximum collector current (IC) of the BDW94C transistor is 12 A, with a peak current (ICM) of 15 A.
- What is the maximum operating junction temperature for the BDW94C?
The maximum operating junction temperature (Tj) for the BDW94C is 150°C.
- What is the thermal resistance junction-case (Rthj-case) of the BDW94C?
The thermal resistance junction-case (Rthj-case) of the BDW94C is 1.56°C/W.
- What are the typical applications of the BDW94C transistor?
The BDW94C transistor is typically used in power linear and switching applications, general-purpose amplifiers, and low-speed switching circuits.
- What is the package type of the BDW94C transistor?
The BDW94C transistor is housed in a TO-220 plastic package.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BDW94C?
The collector-emitter saturation voltage (VCE(sat)) of the BDW94C is up to 3 V.
- What is the base-emitter saturation voltage (VBE(sat)) of the BDW94C?
The base-emitter saturation voltage (VBE(sat)) of the BDW94C is up to 4 V.
- What is the DC current gain (hFE) of the BDW94C transistor?
The DC current gain (hFE) of the BDW94C transistor ranges from 1000 to 100, depending on the collector current.
- Is the BDW94C transistor suitable for high-speed switching applications?
No, the BDW94C transistor is more suited for low-speed switching and general-purpose amplifier applications.
- What is the complementary NPN transistor to the BDW94C?
The complementary NPN transistor to the BDW94C is the BDW93C.
