BDW93C
  • Share:

STMicroelectronics BDW93C

Manufacturer No:
BDW93C
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 100V 12A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDW93C is a silicon Epitaxial-Base NPN power transistor manufactured by STMicroelectronics. It is configured in a monolithic Darlington arrangement and is housed in a Jedec TO-220 plastic package. This transistor is designed for use in power linear and switching applications, offering high current gain and robust thermal performance. The BDW93C has a complementary PNP type, the BDW94C, and another PNP variant, the BDW94B.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)80V
Collector-Emitter Voltage (VCEO)80V
Collector Current (IC)12A
Collector Peak Current (ICM)15A
Base Current (IB)0.2A
Total Dissipation at Tc ≤ 25°C (Ptot)80W
Storage Temperature (Tstg)-65 to 150°C
Max. Operating Junction Temperature (Tj)150°C
Thermal Resistance Junction-case (Rthj-case)1.56°C/W
Collector Cut-off Current (ICBO)5µA
Collector-Emitter Saturation Voltage (VCE(sat))2-3V
Base-Emitter Saturation Voltage (VBE(sat))2.5-4V
DC Current Gain (hFE)1000-750

Key Features

  • Monolithic Darlington configuration for high current gain.
  • High collector current and peak current capabilities.
  • Robust thermal performance with a maximum junction temperature of 150°C.
  • Integrated antiparallel collector-emitter diode.
  • Housed in a Jedec TO-220 plastic package for ease of mounting and thermal management.

Applications

The BDW93C is suitable for various power linear and switching applications, including:

  • Industrial equipment.
  • Power supplies.
  • Motor control systems.
  • Audio amplifiers and other high-power audio equipment.

Q & A

  1. What is the BDW93C transistor? The BDW93C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration.
  2. What package type does the BDW93C use? The BDW93C is housed in a Jedec TO-220 plastic package.
  3. What are the maximum collector and base currents for the BDW93C? The maximum collector current is 12 A, and the maximum base current is 0.2 A.
  4. What is the maximum operating junction temperature for the BDW93C? The maximum operating junction temperature is 150°C.
  5. What are some common applications for the BDW93C? Common applications include industrial equipment, power supplies, motor control systems, and audio amplifiers.
  6. Does the BDW93C have a complementary PNP type? Yes, the complementary PNP type is the BDW94C.
  7. What is the thermal resistance junction-case for the BDW93C? The thermal resistance junction-case is 1.56 °C/W.
  8. What is the collector-emitter saturation voltage for the BDW93C? The collector-emitter saturation voltage ranges from 2 to 3 V.
  9. Is the BDW93C suitable for high-power applications? Yes, it is designed for high-power linear and switching applications.
  10. Where can I find detailed specifications for the BDW93C? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component databases.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):12 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 5A, 3V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$0.93
131

Please send RFQ , we will respond immediately.

Similar Products

Part Number BDW93C BDW94C BDW83C BDW93 BDW93A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 12 A 12 A 15 A 12 A 12 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A 3V @ 100mA, 10A 4V @ 150mA, 15A 3V @ 100mA, 10A 3V @ 100mA, 10A
Current - Collector Cutoff (Max) 1mA 1mA 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 5A, 3V 750 @ 5A, 3V 750 @ 6A, 3V 750 @ 5A, 3V 750 @ 5A, 3V
Power - Max 80 W 80 W 130 W 80 W 80 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-247-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-247-3 TO-220-3 TO-220-3

Related Product By Categories

MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BC857BW_R1_00001
BC857BW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BFS19,235
BFS19,235
Nexperia USA Inc.
TRANS NPN 20V 0.03A TO236AB
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW