BDW93C
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STMicroelectronics BDW93C

Manufacturer No:
BDW93C
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN DARL 100V 12A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDW93C is a silicon Epitaxial-Base NPN power transistor manufactured by STMicroelectronics. It is configured in a monolithic Darlington arrangement and is housed in a Jedec TO-220 plastic package. This transistor is designed for use in power linear and switching applications, offering high current gain and robust thermal performance. The BDW93C has a complementary PNP type, the BDW94C, and another PNP variant, the BDW94B.

Key Specifications

ParameterValueUnit
Collector-Base Voltage (VCBO)80V
Collector-Emitter Voltage (VCEO)80V
Collector Current (IC)12A
Collector Peak Current (ICM)15A
Base Current (IB)0.2A
Total Dissipation at Tc ≤ 25°C (Ptot)80W
Storage Temperature (Tstg)-65 to 150°C
Max. Operating Junction Temperature (Tj)150°C
Thermal Resistance Junction-case (Rthj-case)1.56°C/W
Collector Cut-off Current (ICBO)5µA
Collector-Emitter Saturation Voltage (VCE(sat))2-3V
Base-Emitter Saturation Voltage (VBE(sat))2.5-4V
DC Current Gain (hFE)1000-750

Key Features

  • Monolithic Darlington configuration for high current gain.
  • High collector current and peak current capabilities.
  • Robust thermal performance with a maximum junction temperature of 150°C.
  • Integrated antiparallel collector-emitter diode.
  • Housed in a Jedec TO-220 plastic package for ease of mounting and thermal management.

Applications

The BDW93C is suitable for various power linear and switching applications, including:

  • Industrial equipment.
  • Power supplies.
  • Motor control systems.
  • Audio amplifiers and other high-power audio equipment.

Q & A

  1. What is the BDW93C transistor? The BDW93C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration.
  2. What package type does the BDW93C use? The BDW93C is housed in a Jedec TO-220 plastic package.
  3. What are the maximum collector and base currents for the BDW93C? The maximum collector current is 12 A, and the maximum base current is 0.2 A.
  4. What is the maximum operating junction temperature for the BDW93C? The maximum operating junction temperature is 150°C.
  5. What are some common applications for the BDW93C? Common applications include industrial equipment, power supplies, motor control systems, and audio amplifiers.
  6. Does the BDW93C have a complementary PNP type? Yes, the complementary PNP type is the BDW94C.
  7. What is the thermal resistance junction-case for the BDW93C? The thermal resistance junction-case is 1.56 °C/W.
  8. What is the collector-emitter saturation voltage for the BDW93C? The collector-emitter saturation voltage ranges from 2 to 3 V.
  9. Is the BDW93C suitable for high-power applications? Yes, it is designed for high-power linear and switching applications.
  10. Where can I find detailed specifications for the BDW93C? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component databases.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):12 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 5A, 3V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number BDW93C BDW94C BDW83C BDW93 BDW93A
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 12 A 12 A 15 A 12 A 12 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 45 V 60 V
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A 3V @ 100mA, 10A 4V @ 150mA, 15A 3V @ 100mA, 10A 3V @ 100mA, 10A
Current - Collector Cutoff (Max) 1mA 1mA 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 5A, 3V 750 @ 5A, 3V 750 @ 6A, 3V 750 @ 5A, 3V 750 @ 5A, 3V
Power - Max 80 W 80 W 130 W 80 W 80 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-247-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-247-3 TO-220-3 TO-220-3

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