BD139-16
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STMicroelectronics BD139-16

Manufacturer No:
BD139-16
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 80V 1.5A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD139-16 is a bipolar junction transistor (BJT) manufactured by STMicroelectronics. It is part of the BD139 series, which includes NPN epitaxial planar transistors designed for general-purpose applications, particularly in audio amplifiers and drivers using complementary or quasi-complementary circuits. The BD139-16 is housed in a SOT-32 plastic package and is known for its reliability and performance in various electronic systems.

Key Specifications

Parameter Value Unit
Polarity NPN
Type Epitaxial Planar
Collector-Emitter Voltage (Vceo) 80 V
Collector Current (Ic) 1.5 A
Power Dissipation (Pd) 1.25 W
DC Current Gain (hFE) Min 100
Package Style SOT-32
Mounting Method Through Hole
Operating Temperature (Tj) 150 °C
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Cutoff Current (ICBO) 100nA

Key Features

  • High Collector Current: The BD139-16 can handle a maximum collector current of 1.5A, making it suitable for applications requiring moderate to high current handling.
  • High Collector-Emitter Voltage: With a maximum collector-emitter voltage of 80V, this transistor is robust and can handle a wide range of voltage levels.
  • Low Power Dissipation: The transistor has a power dissipation of 1.25W, which is efficient for many general-purpose applications.
  • High DC Current Gain: The minimum DC current gain (hFE) of 100 ensures reliable amplification in various circuits.
  • Through Hole Mounting: The SOT-32 package with through-hole mounting makes it easy to integrate into PCBs and other electronic assemblies.
  • Complementary Transistors: The BD139-16 is part of a complementary transistor pair, making it ideal for use in audio amplifiers and drivers using complementary or quasi-complementary circuits.

Applications

  • Audio Amplifiers and Drivers: The BD139-16 is specifically designed for use in audio amplifiers and drivers, particularly those utilizing complementary or quasi-complementary circuits.
  • General Purpose Amplification: Its robust specifications make it suitable for a wide range of general-purpose amplification tasks.
  • Power Switching: The transistor can be used in power switching applications due to its high collector current and voltage ratings.
  • Industrial and Consumer Electronics: It is commonly used in various industrial and consumer electronic devices where reliable and efficient amplification is required.

Q & A

  1. What is the maximum collector-emitter voltage of the BD139-16?

    The maximum collector-emitter voltage (Vceo) of the BD139-16 is 80V.

  2. What is the maximum collector current of the BD139-16?

    The maximum collector current (Ic) of the BD139-16 is 1.5A.

  3. What is the power dissipation of the BD139-16?

    The power dissipation (Pd) of the BD139-16 is 1.25W.

  4. What is the minimum DC current gain (hFE) of the BD139-16?

    The minimum DC current gain (hFE) of the BD139-16 is 100.

  5. What type of package does the BD139-16 use?

    The BD139-16 is housed in a SOT-32 plastic package.

  6. What is the mounting method of the BD139-16?

    The BD139-16 uses through-hole mounting.

  7. What are the typical applications of the BD139-16?

    The BD139-16 is typically used in audio amplifiers, drivers, and general-purpose amplification tasks.

  8. What is the operating temperature range of the BD139-16?

    The operating temperature (Tj) of the BD139-16 is up to 150°C.

  9. Is the BD139-16 RoHS compliant?

    Yes, the BD139-16 is RoHS compliant.

  10. What is the collector cutoff current (ICBO) of the BD139-16?

    The collector cutoff current (ICBO) of the BD139-16 is 100nA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Same Series
BD136
BD136
TRANS PNP 45V 1.5A SOT32-3
BD136-16
BD136-16
TRANS PNP 45V 1.5A SOT32
BD139-10
BD139-10
TRANS NPN 80V 1.5A SOT32
BD139-16
BD139-16
TRANS NPN 80V 1.5A SOT32-3
BD135-16
BD135-16
TRANS NPN 45V 1.5A SOT32
BD139
BD139
TRANS NPN 80V 1.5A SOT32-3

Similar Products

Part Number BD139-16 BD135-16 BD136-16 BD139-10
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Active Active
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 45 V 45 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 SOT-32 SOT-32 SOT-32

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