BD139-16
  • Share:

STMicroelectronics BD139-16

Manufacturer No:
BD139-16
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 80V 1.5A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD139-16 is a bipolar junction transistor (BJT) manufactured by STMicroelectronics. It is part of the BD139 series, which includes NPN epitaxial planar transistors designed for general-purpose applications, particularly in audio amplifiers and drivers using complementary or quasi-complementary circuits. The BD139-16 is housed in a SOT-32 plastic package and is known for its reliability and performance in various electronic systems.

Key Specifications

Parameter Value Unit
Polarity NPN
Type Epitaxial Planar
Collector-Emitter Voltage (Vceo) 80 V
Collector Current (Ic) 1.5 A
Power Dissipation (Pd) 1.25 W
DC Current Gain (hFE) Min 100
Package Style SOT-32
Mounting Method Through Hole
Operating Temperature (Tj) 150 °C
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Cutoff Current (ICBO) 100nA

Key Features

  • High Collector Current: The BD139-16 can handle a maximum collector current of 1.5A, making it suitable for applications requiring moderate to high current handling.
  • High Collector-Emitter Voltage: With a maximum collector-emitter voltage of 80V, this transistor is robust and can handle a wide range of voltage levels.
  • Low Power Dissipation: The transistor has a power dissipation of 1.25W, which is efficient for many general-purpose applications.
  • High DC Current Gain: The minimum DC current gain (hFE) of 100 ensures reliable amplification in various circuits.
  • Through Hole Mounting: The SOT-32 package with through-hole mounting makes it easy to integrate into PCBs and other electronic assemblies.
  • Complementary Transistors: The BD139-16 is part of a complementary transistor pair, making it ideal for use in audio amplifiers and drivers using complementary or quasi-complementary circuits.

Applications

  • Audio Amplifiers and Drivers: The BD139-16 is specifically designed for use in audio amplifiers and drivers, particularly those utilizing complementary or quasi-complementary circuits.
  • General Purpose Amplification: Its robust specifications make it suitable for a wide range of general-purpose amplification tasks.
  • Power Switching: The transistor can be used in power switching applications due to its high collector current and voltage ratings.
  • Industrial and Consumer Electronics: It is commonly used in various industrial and consumer electronic devices where reliable and efficient amplification is required.

Q & A

  1. What is the maximum collector-emitter voltage of the BD139-16?

    The maximum collector-emitter voltage (Vceo) of the BD139-16 is 80V.

  2. What is the maximum collector current of the BD139-16?

    The maximum collector current (Ic) of the BD139-16 is 1.5A.

  3. What is the power dissipation of the BD139-16?

    The power dissipation (Pd) of the BD139-16 is 1.25W.

  4. What is the minimum DC current gain (hFE) of the BD139-16?

    The minimum DC current gain (hFE) of the BD139-16 is 100.

  5. What type of package does the BD139-16 use?

    The BD139-16 is housed in a SOT-32 plastic package.

  6. What is the mounting method of the BD139-16?

    The BD139-16 uses through-hole mounting.

  7. What are the typical applications of the BD139-16?

    The BD139-16 is typically used in audio amplifiers, drivers, and general-purpose amplification tasks.

  8. What is the operating temperature range of the BD139-16?

    The operating temperature (Tj) of the BD139-16 is up to 150°C.

  9. Is the BD139-16 RoHS compliant?

    Yes, the BD139-16 is RoHS compliant.

  10. What is the collector cutoff current (ICBO) of the BD139-16?

    The collector cutoff current (ICBO) of the BD139-16 is 100nA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
0 Remaining View Similar

In Stock

$0.53
1,789

Please send RFQ , we will respond immediately.

Same Series
BD136
BD136
TRANS PNP 45V 1.5A SOT32-3
BD136-16
BD136-16
TRANS PNP 45V 1.5A SOT32
BD139-10
BD139-10
TRANS NPN 80V 1.5A SOT32
BD139-16
BD139-16
TRANS NPN 80V 1.5A SOT32-3
BD135-16
BD135-16
TRANS NPN 45V 1.5A SOT32
BD139
BD139
TRANS NPN 80V 1.5A SOT32-3

Similar Products

Part Number BD139-16 BD135-16 BD136-16 BD139-10
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Active Active
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 45 V 45 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.25 W 1.25 W 1.25 W 1.25 W
Frequency - Transition - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 SOT-32 SOT-32 SOT-32

Related Product By Categories

MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW