BD139-10
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STMicroelectronics BD139-10

Manufacturer No:
BD139-10
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 80V 1.5A SOT32
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BD139-10 is an NPN epitaxial planar transistor produced by STMicroelectronics. It is part of the BD135 to BD140 series, which includes complementary PNP types such as the BD136 and BD140. These transistors are designed for use in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits. They are mounted in the SOT-32 plastic package, making them suitable for a variety of general-purpose applications.

Key Specifications

Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 80 V
VCEO Collector-emitter voltage (IB = 0) 80 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 1.5 A
ICM Collector peak current 3 A
IB Base current 0.5 A
PTOT Total dissipation at Tc ≤ 25 °C 12.5 W
PTOT Total dissipation at Tamb ≤ 25 °C 1.25 W
Tstg Storage temperature -65 to 150 °C
Tj Max. operating junction temperature 150 °C
Rthj-case Thermal resistance junction-case 10 °C/W
Rthj-amb Thermal resistance junction-ambient 100 °C/W
VCEO(sus) Collector-emitter sustaining voltage (IB=0) 80 V
VCE(sat) Collector-emitter saturation voltage 0.5 V
VBE Base-emitter voltage 1 V
hFE DC current gain 25 to 250

Key Features

  • Epitaxial planar transistor in SOT-32 plastic package
  • Designed for audio amplifiers and drivers using complementary or quasi-complementary circuits
  • High DC current gain (hFE) with pre-selected groups (e.g., 63 to 160 for BD139-10)
  • High collector-emitter voltage (VCEO) of up to 80 V
  • Collector current (IC) up to 1.5 A and peak current (ICM) up to 3 A
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.5 V
  • ECOPACK® lead-free second level interconnect for environmental compliance

Applications

  • Audio amplifiers
  • Drivers in complementary or quasi-complementary circuits
  • General-purpose applications requiring medium power linear and switching operations

Q & A

  1. What is the BD139-10 transistor used for? The BD139-10 is used in audio amplifiers and drivers, particularly in complementary or quasi-complementary circuits.
  2. What is the package type of the BD139-10? The BD139-10 is mounted in the SOT-32 plastic package.
  3. What is the maximum collector-emitter voltage (VCEO) of the BD139-10? The maximum VCEO is 80 V.
  4. What is the maximum collector current (IC) of the BD139-10? The maximum IC is 1.5 A.
  5. What is the thermal resistance junction-case (Rthj-case) of the BD139-10? The Rthj-case is 10 °C/W.
  6. Is the BD139-10 RoHS compliant? Yes, the BD139-10 is RoHS compliant with an ECOPACK1 grade.
  7. What is the operating temperature range of the BD139-10? The operating temperature range is from -65 °C to 150 °C.
  8. What is the maximum base current (IB) of the BD139-10? The maximum IB is 0.5 A.
  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BD139-10? The VCE(sat) is 0.5 V.
  10. What are the DC current gain (hFE) groups for the BD139-10? The hFE groups range from 63 to 160 for the BD139-10.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:1.25 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32
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Same Series
BD136
BD136
TRANS PNP 45V 1.5A SOT32-3
BD136-16
BD136-16
TRANS PNP 45V 1.5A SOT32
BD139-10
BD139-10
TRANS NPN 80V 1.5A SOT32
BD139-16
BD139-16
TRANS NPN 80V 1.5A SOT32-3
BD135-16
BD135-16
TRANS NPN 45V 1.5A SOT32
BD139
BD139
TRANS NPN 80V 1.5A SOT32-3

Similar Products

Part Number BD139-10 BD139-16
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 1.25 W 1.25 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32 SOT-32-3

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