BSS84XHZGG2CR
  • Share:

Rohm Semiconductor BSS84XHZGG2CR

Manufacturer No:
BSS84XHZGG2CR
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 230MA DFN1010-3W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84XHZGG2CR is an ultra-compact, AEC-Q101 qualified, P-channel MOSFET designed by ROHM Semiconductor. This small signal MOSFET is optimized for automotive applications, ensuring high reliability and performance under extreme conditions. It features ROHM’s original Wettable Flank formation technology, which enhances solder quality and facilitates automatic optical inspection (AOI) for superior mounting reliability. The device is particularly suited for high-density applications such as automotive ECUs and ADAS camera modules, where miniaturization and high heat dissipation are critical.

Key Specifications

Parameter Value
Package Code DFN1010-3W
Number of Terminals 3
Polarity Pch
Drain-Source Voltage (VDSS) [V] -60
Drain Current (ID) [A] -0.23
Drain-Source ON Resistance (RDS(on)) [Ω] @ VGS=4.5V (Typ.) 3.5
Drain-Source ON Resistance (RDS(on)) [Ω] @ VGS=10V (Typ.) 2.8
Power Dissipation (PD) [W] 1
Drive Voltage [V] -4.5
Mounting Style Surface Mount
Storage Temperature (Min.) [°C] -55
Storage Temperature (Max.) [°C] 150
Package Size [mm] 1.0x1.0 (t=0.45)
Common Standard AEC-Q101 (Automotive Grade)

Key Features

  • Leadless ultra-small and exposed drain pad for excellent thermal conduction in a SMD plastic package (1.0×1.0×0.4mm)
  • Side wettable flanks for automated optical solder inspection (AOI), with tin-plated 100% solderable side pads guaranteeing a minimum of 125µm
  • AEC-Q101 qualified for automotive-grade reliability
  • -4.5V drive voltage
  • Ultra-compact design with high heat dissipation, achieving the same performance as larger packages (e.g., SOT-23) but in a smaller 1.0×1.0mm package, reducing mounting area by approximately 85%

Applications

  • Autonomous driving control ECUs
  • Car infotainment systems
  • Engine control ECUs
  • Drive recorders
  • ADAS (Advanced Driver Assistance Systems) applications
  • Switching and reverse connection protection applications

Q & A

  1. What is the BSS84XHZGG2CR MOSFET used for?

    The BSS84XHZGG2CR is used in various automotive applications, including autonomous driving control ECUs, car infotainment systems, engine control ECUs, drive recorders, and ADAS applications.

  2. What is the package type of the BSS84XHZGG2CR?

    The package type is DFN1010-3W.

  3. What is the drain-source voltage (VDSS) of the BSS84XHZGG2CR?

    The drain-source voltage (VDSS) is -60V.

  4. What is the continuous drain current (ID) of the BSS84XHZGG2CR?

    The continuous drain current (ID) is -0.23A.

  5. What is the power dissipation (PD) of the BSS84XHZGG2CR?

    The power dissipation (PD) is 1W.

  6. Is the BSS84XHZGG2CR AEC-Q101 qualified?

    Yes, the BSS84XHZGG2CR is AEC-Q101 qualified, ensuring automotive-grade reliability.

  7. What is the drive voltage of the BSS84XHZGG2CR?

    The drive voltage is -4.5V.

  8. What are the key features of the BSS84XHZGG2CR's package design?

    The package features leadless ultra-small design, exposed drain pad for thermal conduction, and side wettable flanks for AOI.

  9. How does the BSS84XHZGG2CR achieve high heat dissipation?

    The device achieves high heat dissipation through its bottom electrode structure, improving heat dissipation by up to 65% compared to larger packages like SOT-23.

  10. What is the storage temperature range for the BSS84XHZGG2CR?

    The storage temperature range is from -55°C to 150°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010-3W
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.60
1,037

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

BAV70HMT116
BAV70HMT116
Rohm Semiconductor
BAV70HM IS HIGH RELIABILITY AND
BAW56LT116
BAW56LT116
Rohm Semiconductor
DIODE GENERAL PURPOSE SMD
RB751S-40SPTE61
RB751S-40SPTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
BZX84C11VLFHT116
BZX84C11VLFHT116
Rohm Semiconductor
DIODE ZENER 11V 250MW SSD3
BZX84C30VLT116
BZX84C30VLT116
Rohm Semiconductor
DIODE ZENER 30V 250MW SSD3
BZX84B12VLT116
BZX84B12VLT116
Rohm Semiconductor
DIODE ZENER 12V 250MW SSD3
BZX84C12VLYT116
BZX84C12VLYT116
Rohm Semiconductor
250MW, 12V, SOT-23, ZENER DIODE
BCX17HZGT116
BCX17HZGT116
Rohm Semiconductor
TRANS PNP 45V 0.5A SST3
BC858BWT106
BC858BWT106
Rohm Semiconductor
TRANS PNP 30V 0.1A UMT3
BCW70T116
BCW70T116
Rohm Semiconductor
TRANS PNP 45V 0.1A SST3
LM324FJ-GE2
LM324FJ-GE2
Rohm Semiconductor
GROUND SENSE OPERATIONAL AMPLIFI
LM358F-E2
LM358F-E2
Rohm Semiconductor
IC OPAMP GP 2 CIRCUIT 8SOP