BSS84XHZGG2CR
  • Share:

Rohm Semiconductor BSS84XHZGG2CR

Manufacturer No:
BSS84XHZGG2CR
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 230MA DFN1010-3W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84XHZGG2CR is an ultra-compact, AEC-Q101 qualified, P-channel MOSFET designed by ROHM Semiconductor. This small signal MOSFET is optimized for automotive applications, ensuring high reliability and performance under extreme conditions. It features ROHM’s original Wettable Flank formation technology, which enhances solder quality and facilitates automatic optical inspection (AOI) for superior mounting reliability. The device is particularly suited for high-density applications such as automotive ECUs and ADAS camera modules, where miniaturization and high heat dissipation are critical.

Key Specifications

Parameter Value
Package Code DFN1010-3W
Number of Terminals 3
Polarity Pch
Drain-Source Voltage (VDSS) [V] -60
Drain Current (ID) [A] -0.23
Drain-Source ON Resistance (RDS(on)) [Ω] @ VGS=4.5V (Typ.) 3.5
Drain-Source ON Resistance (RDS(on)) [Ω] @ VGS=10V (Typ.) 2.8
Power Dissipation (PD) [W] 1
Drive Voltage [V] -4.5
Mounting Style Surface Mount
Storage Temperature (Min.) [°C] -55
Storage Temperature (Max.) [°C] 150
Package Size [mm] 1.0x1.0 (t=0.45)
Common Standard AEC-Q101 (Automotive Grade)

Key Features

  • Leadless ultra-small and exposed drain pad for excellent thermal conduction in a SMD plastic package (1.0×1.0×0.4mm)
  • Side wettable flanks for automated optical solder inspection (AOI), with tin-plated 100% solderable side pads guaranteeing a minimum of 125µm
  • AEC-Q101 qualified for automotive-grade reliability
  • -4.5V drive voltage
  • Ultra-compact design with high heat dissipation, achieving the same performance as larger packages (e.g., SOT-23) but in a smaller 1.0×1.0mm package, reducing mounting area by approximately 85%

Applications

  • Autonomous driving control ECUs
  • Car infotainment systems
  • Engine control ECUs
  • Drive recorders
  • ADAS (Advanced Driver Assistance Systems) applications
  • Switching and reverse connection protection applications

Q & A

  1. What is the BSS84XHZGG2CR MOSFET used for?

    The BSS84XHZGG2CR is used in various automotive applications, including autonomous driving control ECUs, car infotainment systems, engine control ECUs, drive recorders, and ADAS applications.

  2. What is the package type of the BSS84XHZGG2CR?

    The package type is DFN1010-3W.

  3. What is the drain-source voltage (VDSS) of the BSS84XHZGG2CR?

    The drain-source voltage (VDSS) is -60V.

  4. What is the continuous drain current (ID) of the BSS84XHZGG2CR?

    The continuous drain current (ID) is -0.23A.

  5. What is the power dissipation (PD) of the BSS84XHZGG2CR?

    The power dissipation (PD) is 1W.

  6. Is the BSS84XHZGG2CR AEC-Q101 qualified?

    Yes, the BSS84XHZGG2CR is AEC-Q101 qualified, ensuring automotive-grade reliability.

  7. What is the drive voltage of the BSS84XHZGG2CR?

    The drive voltage is -4.5V.

  8. What are the key features of the BSS84XHZGG2CR's package design?

    The package features leadless ultra-small design, exposed drain pad for thermal conduction, and side wettable flanks for AOI.

  9. How does the BSS84XHZGG2CR achieve high heat dissipation?

    The device achieves high heat dissipation through its bottom electrode structure, improving heat dissipation by up to 65% compared to larger packages like SOT-23.

  10. What is the storage temperature range for the BSS84XHZGG2CR?

    The storage temperature range is from -55°C to 150°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010-3W
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.60
1,037

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

MMBZ15VALT116
MMBZ15VALT116
Rohm Semiconductor
TVS DIODE 12VWM 21VC SOT23
BAT54SHYFHT116
BAT54SHYFHT116
Rohm Semiconductor
30V, 200MA, SOT-23, SERIES CONNE
BAV99HYT116
BAV99HYT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA
BAV70HMT116
BAV70HMT116
Rohm Semiconductor
BAV70HM IS HIGH RELIABILITY AND
RB751V-40TE-17
RB751V-40TE-17
Rohm Semiconductor
DIODE SCHOTTKY 30V 30MA UMD2
BZX84C3V0LYFHT116
BZX84C3V0LYFHT116
Rohm Semiconductor
250MW, 3V, SOT-23, AUTOMOTIVE ZE
BZX84C5V1LYT116
BZX84C5V1LYT116
Rohm Semiconductor
250MW, 5.1V, SOT-23, ZENER DIODE
BZX84B16VLYT116
BZX84B16VLYT116
Rohm Semiconductor
250MW, 16V, SOT-23, ZENER DIODE
BZX84C6V2LT116
BZX84C6V2LT116
Rohm Semiconductor
DIODE ZENER 6.2V 250MW SSD3
BZX84B10VLFHT116
BZX84B10VLFHT116
Rohm Semiconductor
DIODE ZENER 10V 250MW SSD3
BZX84C33VLYFHT116
BZX84C33VLYFHT116
Rohm Semiconductor
250MW, 33V, SOT-23, AUTOMOTIVE Z
BC858BHZGT116
BC858BHZGT116
Rohm Semiconductor
TRANS PNP 30V 0.1A SST3