BSS84WAHZGT106
  • Share:

Rohm Semiconductor BSS84WAHZGT106

Manufacturer No:
BSS84WAHZGT106
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
PCH -60V -0.21A, SOT-323, SMALL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84WAHZGT106 is a high-reliability, automotive-grade Power MOSFET produced by Rohm Semiconductor. This single P-channel MOSFET is housed in the industry-favorite SOT-323 package and includes an ESD protection diode. It is designed for use in switching circuits and high-side load switch, relay driver applications. The device is qualified to the AEC-Q101 standard, ensuring its suitability for demanding automotive environments.

Key Specifications

ParameterValue
Package CodeSOT-323 (JEITA Package: SC-70)
Number of Terminals3
PolarityP-channel
Drain-Source Voltage (VDSS)-60 V
Drain Current (ID)-0.21 A
RDS(on) @ VGS=4.5V (Typ.)3.5 Ω
RDS(on) @ VGS=10V (Typ.)2.8 Ω
Power Dissipation (PD)0.3 W
Mounting StyleSurface Mount
Storage Temperature Range-55°C to 150°C
Package Size2.0x2.1 mm (t=1.1 mm)
Common StandardAEC-Q101 (Automotive Grade)

Key Features

  • Trench MOSFET technology for enhanced performance
  • Very fast switching capabilities
  • 4.5V drive voltage for low power consumption
  • AEC-Q101 qualified, ensuring high reliability in automotive applications

Applications

The BSS84WAHZGT106 is ideal for various automotive and industrial applications, including:

  • Switching circuits
  • High-side load switches
  • Relay drivers

Q & A

  1. What is the package type of the BSS84WAHZGT106? The BSS84WAHZGT106 is packaged in a SOT-323 (JEITA Package: SC-70) package.
  2. What is the drain-source voltage rating of the BSS84WAHZGT106? The drain-source voltage rating is -60 V.
  3. What is the maximum drain current of the BSS84WAHZGT106? The maximum drain current is -0.21 A.
  4. What is the typical RDS(on) at VGS=4.5V? The typical RDS(on) at VGS=4.5V is 3.5 Ω.
  5. Is the BSS84WAHZGT106 AEC-Q101 qualified? Yes, the BSS84WAHZGT106 is AEC-Q101 qualified.
  6. What are the storage temperature limits for the BSS84WAHZGT106? The storage temperature range is -55°C to 150°C.
  7. What are some common applications for the BSS84WAHZGT106? Common applications include switching circuits, high-side load switches, and relay drivers.
  8. What is the power dissipation rating of the BSS84WAHZGT106? The power dissipation rating is 0.3 W.
  9. What is the mounting style of the BSS84WAHZGT106? The mounting style is surface mount.
  10. Does the BSS84WAHZGT106 include ESD protection? Yes, the BSS84WAHZGT106 includes an ESD protection diode.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:UMT3
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.51
1,157

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

BAW56HMT116
BAW56HMT116
Rohm Semiconductor
BAW56HM IS HIGH RELIABILITY AND
BAS40-04HMFHT116
BAS40-04HMFHT116
Rohm Semiconductor
DIODE ARRAY SCHOT 40V 120MA SSD3
BAS16HMFHT116
BAS16HMFHT116
Rohm Semiconductor
HIGH RELIABILITY AND SMALL MOLD
BZX84C7V5LYT116
BZX84C7V5LYT116
Rohm Semiconductor
250MW, 7.5V, SOT-23, ZENER DIODE
BZX84C3V9LT116
BZX84C3V9LT116
Rohm Semiconductor
DIODE ZENER 3.9V 250MW SSD3
BZX84C3V6LT116
BZX84C3V6LT116
Rohm Semiconductor
DIODE ZENER 3.6V 250MW SSD3
BZX84B5V6LYFHT116
BZX84B5V6LYFHT116
Rohm Semiconductor
250MW, 5.6V, SOT-23, AUTOMOTIVE
BC846BT116
BC846BT116
Rohm Semiconductor
TRANS NPN 65V 0.12A SST3
BCX56-16T100
BCX56-16T100
Rohm Semiconductor
TRANS NPN 80V 1A MPT3
LM324FV-GE2
LM324FV-GE2
Rohm Semiconductor
GROUND SENSE OPERATIONAL AMPLIFI
LM2901F-E2
LM2901F-E2
Rohm Semiconductor
GROUND SENSE COMPARATOR : LM2901
BD14000EFV-CE2
BD14000EFV-CE2
Rohm Semiconductor
IC LSI CELL BALANCE 30HTSSOP