BSS84WAHZGT106
  • Share:

Rohm Semiconductor BSS84WAHZGT106

Manufacturer No:
BSS84WAHZGT106
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
PCH -60V -0.21A, SOT-323, SMALL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84WAHZGT106 is a high-reliability, automotive-grade Power MOSFET produced by Rohm Semiconductor. This single P-channel MOSFET is housed in the industry-favorite SOT-323 package and includes an ESD protection diode. It is designed for use in switching circuits and high-side load switch, relay driver applications. The device is qualified to the AEC-Q101 standard, ensuring its suitability for demanding automotive environments.

Key Specifications

ParameterValue
Package CodeSOT-323 (JEITA Package: SC-70)
Number of Terminals3
PolarityP-channel
Drain-Source Voltage (VDSS)-60 V
Drain Current (ID)-0.21 A
RDS(on) @ VGS=4.5V (Typ.)3.5 Ω
RDS(on) @ VGS=10V (Typ.)2.8 Ω
Power Dissipation (PD)0.3 W
Mounting StyleSurface Mount
Storage Temperature Range-55°C to 150°C
Package Size2.0x2.1 mm (t=1.1 mm)
Common StandardAEC-Q101 (Automotive Grade)

Key Features

  • Trench MOSFET technology for enhanced performance
  • Very fast switching capabilities
  • 4.5V drive voltage for low power consumption
  • AEC-Q101 qualified, ensuring high reliability in automotive applications

Applications

The BSS84WAHZGT106 is ideal for various automotive and industrial applications, including:

  • Switching circuits
  • High-side load switches
  • Relay drivers

Q & A

  1. What is the package type of the BSS84WAHZGT106? The BSS84WAHZGT106 is packaged in a SOT-323 (JEITA Package: SC-70) package.
  2. What is the drain-source voltage rating of the BSS84WAHZGT106? The drain-source voltage rating is -60 V.
  3. What is the maximum drain current of the BSS84WAHZGT106? The maximum drain current is -0.21 A.
  4. What is the typical RDS(on) at VGS=4.5V? The typical RDS(on) at VGS=4.5V is 3.5 Ω.
  5. Is the BSS84WAHZGT106 AEC-Q101 qualified? Yes, the BSS84WAHZGT106 is AEC-Q101 qualified.
  6. What are the storage temperature limits for the BSS84WAHZGT106? The storage temperature range is -55°C to 150°C.
  7. What are some common applications for the BSS84WAHZGT106? Common applications include switching circuits, high-side load switches, and relay drivers.
  8. What is the power dissipation rating of the BSS84WAHZGT106? The power dissipation rating is 0.3 W.
  9. What is the mounting style of the BSS84WAHZGT106? The mounting style is surface mount.
  10. Does the BSS84WAHZGT106 include ESD protection? Yes, the BSS84WAHZGT106 includes an ESD protection diode.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:UMT3
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.51
1,157

Please send RFQ , we will respond immediately.

Same Series
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAT54AHMT116
BAT54AHMT116
Rohm Semiconductor
BAT54AHM IS SCHOTTKY BARRIER DIO
BAS21HYT116
BAS21HYT116
Rohm Semiconductor
200V, 200MA, SOT-23, SINGLE, SWI
RB751CS-40T2R
RB751CS-40T2R
Rohm Semiconductor
DIODE SCHOTTKY 30V 30MA VMN2
RB751S-40T9TE61
RB751S-40T9TE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
BZX84C8V2LYT116
BZX84C8V2LYT116
Rohm Semiconductor
250MW, 8.2V, SOT-23, ZENER DIODE
BZX84B7V5LYT116
BZX84B7V5LYT116
Rohm Semiconductor
250MW, 7.5V, SOT-23, ZENER DIODE
BZX84C3V3LYT116
BZX84C3V3LYT116
Rohm Semiconductor
250MW, 3.3V, SOT-23, ZENER DIODE
BZX84B16VLYT116
BZX84B16VLYT116
Rohm Semiconductor
250MW, 16V, SOT-23, ZENER DIODE
BZX84C27VLYFHT116
BZX84C27VLYFHT116
Rohm Semiconductor
250MW, 27V, SOT-23, AUTOMOTIVE Z
BZX84C2V4LFHT116
BZX84C2V4LFHT116
Rohm Semiconductor
DIODE ZENER 2.4V 250MW SSD3
BZX84C36VLFHT116
BZX84C36VLFHT116
Rohm Semiconductor
DIODE ZENER 2.7V 250MW SSD3
BC857BT116
BC857BT116
Rohm Semiconductor
TRANS PNP 45V 0.1A SST3