BSS84WAHZGT106
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Rohm Semiconductor BSS84WAHZGT106

Manufacturer No:
BSS84WAHZGT106
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
PCH -60V -0.21A, SOT-323, SMALL
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BSS84WAHZGT106 is a high-reliability, automotive-grade Power MOSFET produced by Rohm Semiconductor. This single P-channel MOSFET is housed in the industry-favorite SOT-323 package and includes an ESD protection diode. It is designed for use in switching circuits and high-side load switch, relay driver applications. The device is qualified to the AEC-Q101 standard, ensuring its suitability for demanding automotive environments.

Key Specifications

ParameterValue
Package CodeSOT-323 (JEITA Package: SC-70)
Number of Terminals3
PolarityP-channel
Drain-Source Voltage (VDSS)-60 V
Drain Current (ID)-0.21 A
RDS(on) @ VGS=4.5V (Typ.)3.5 Ω
RDS(on) @ VGS=10V (Typ.)2.8 Ω
Power Dissipation (PD)0.3 W
Mounting StyleSurface Mount
Storage Temperature Range-55°C to 150°C
Package Size2.0x2.1 mm (t=1.1 mm)
Common StandardAEC-Q101 (Automotive Grade)

Key Features

  • Trench MOSFET technology for enhanced performance
  • Very fast switching capabilities
  • 4.5V drive voltage for low power consumption
  • AEC-Q101 qualified, ensuring high reliability in automotive applications

Applications

The BSS84WAHZGT106 is ideal for various automotive and industrial applications, including:

  • Switching circuits
  • High-side load switches
  • Relay drivers

Q & A

  1. What is the package type of the BSS84WAHZGT106? The BSS84WAHZGT106 is packaged in a SOT-323 (JEITA Package: SC-70) package.
  2. What is the drain-source voltage rating of the BSS84WAHZGT106? The drain-source voltage rating is -60 V.
  3. What is the maximum drain current of the BSS84WAHZGT106? The maximum drain current is -0.21 A.
  4. What is the typical RDS(on) at VGS=4.5V? The typical RDS(on) at VGS=4.5V is 3.5 Ω.
  5. Is the BSS84WAHZGT106 AEC-Q101 qualified? Yes, the BSS84WAHZGT106 is AEC-Q101 qualified.
  6. What are the storage temperature limits for the BSS84WAHZGT106? The storage temperature range is -55°C to 150°C.
  7. What are some common applications for the BSS84WAHZGT106? Common applications include switching circuits, high-side load switches, and relay drivers.
  8. What is the power dissipation rating of the BSS84WAHZGT106? The power dissipation rating is 0.3 W.
  9. What is the mounting style of the BSS84WAHZGT106? The mounting style is surface mount.
  10. Does the BSS84WAHZGT106 include ESD protection? Yes, the BSS84WAHZGT106 includes an ESD protection diode.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:UMT3
Package / Case:SC-70, SOT-323
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