BSS84T116
  • Share:

Rohm Semiconductor BSS84T116

Manufacturer No:
BSS84T116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 230MA SST3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84T116 is a P-channel enhancement mode field-effect transistor (MOSFET) produced by ROHM Semiconductor. This device is part of the industry's favorite SOT-23 package and is designed for low-voltage applications requiring high-side switching. It incorporates advanced trench MOSFET technology, ensuring fast switching and reliable performance.

Key Specifications

ParameterValueUnit
Package CodeTO-236AB (SOT-23-3)
Number of Terminals3
PolarityPch
Drain-Source Voltage (VDSS)-60V
Drain Current (ID) - Continuous-0.23A
Drain Current (ID) - Pulsed-0.52A
On-State Resistance (RDS(on)) at VGS = 4.5V3.5Ω
On-State Resistance (RDS(on)) at VGS = 10V2.8Ω
Power Dissipation (PD)0.35W
Gate Threshold Voltage (VGS(th))-0.8 to -2V
Storage Temperature Range-55 to 150°C
Package Size2.9x2.4 (t=1.2) mm

Key Features

  • Trench MOSFET technology for high cell density and low on-state resistance.
  • Very fast switching capabilities.
  • Low drive voltage of 4.5V.
  • ESD protection diode integrated into the package.
  • Rugged and reliable performance.

Applications

The BSS84T116 is particularly suited for low-voltage applications requiring a high-side switch. It is ideal for use in switching circuits, high-side load switches, and relay driver applications.

Q & A

  1. What is the drain-source voltage rating of the BSS84T116?
    The drain-source voltage rating is -60V.
  2. What is the continuous drain current rating of the BSS84T116?
    The continuous drain current rating is -0.23A.
  3. What is the typical on-state resistance at VGS = 4.5V?
    The typical on-state resistance at VGS = 4.5V is 3.5Ω.
  4. What is the power dissipation rating of the BSS84T116?
    The power dissipation rating is 0.35W.
  5. What is the gate threshold voltage range of the BSS84T116?
    The gate threshold voltage range is -0.8 to -2V.
  6. What is the storage temperature range for the BSS84T116?
    The storage temperature range is -55 to 150°C.
  7. What type of technology is used in the BSS84T116?
    The BSS84T116 uses trench MOSFET technology.
  8. Is the BSS84T116 suitable for automotive applications?
    For automotive usage, please contact the sales department.
  9. What is the package type of the BSS84T116?
    The package type is TO-236AB (SOT-23-3).
  10. What are some typical applications of the BSS84T116?
    Typical applications include switching circuits, high-side load switches, and relay driver applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SST3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
395

Please send RFQ , we will respond immediately.

Same Series
DD15S10LVLS
DD15S10LVLS
CONN D-SUB HD RCPT 15POS CRIMP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAT54CHMT116
BAT54CHMT116
Rohm Semiconductor
BAT54CHM IS SCHOTTKY BARRIER DIO
BAV99T116
BAV99T116
Rohm Semiconductor
DIODE ARRAY GP 75V 215MA SSD3
RB751S-409HKTE61
RB751S-409HKTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
BZX84C3V9LYFHT116
BZX84C3V9LYFHT116
Rohm Semiconductor
250MW, 3.6V, SOT-23, AUTOMOTIVE
BZX84C20VLYFHT116
BZX84C20VLYFHT116
Rohm Semiconductor
250MW, 20V, SOT-23, AUTOMOTIVE Z
BZX84B15VLFHT116
BZX84B15VLFHT116
Rohm Semiconductor
DIODE ZENER 15V 250MW SSD3
BZX84B10VLFHT116
BZX84B10VLFHT116
Rohm Semiconductor
DIODE ZENER 10V 250MW SSD3
BCX53-16T100
BCX53-16T100
Rohm Semiconductor
TRANS PNP MPT3
BSS138BKAHZGT116
BSS138BKAHZGT116
Rohm Semiconductor
NCH 60V 400MA, SOT-23, SMALL SIG
LM358FVT-GE2
LM358FVT-GE2
Rohm Semiconductor
GROUND SENSE OPERATIONAL AMPLIFI
BD6794EFV-E2
BD6794EFV-E2
Rohm Semiconductor
IC MOTOR DRIVER 18V-32V 40HTSSOP
BD14000EFV-CE2
BD14000EFV-CE2
Rohm Semiconductor
IC LSI CELL BALANCE 30HTSSOP