BSS84T116
  • Share:

Rohm Semiconductor BSS84T116

Manufacturer No:
BSS84T116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 230MA SST3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84T116 is a P-channel enhancement mode field-effect transistor (MOSFET) produced by ROHM Semiconductor. This device is part of the industry's favorite SOT-23 package and is designed for low-voltage applications requiring high-side switching. It incorporates advanced trench MOSFET technology, ensuring fast switching and reliable performance.

Key Specifications

ParameterValueUnit
Package CodeTO-236AB (SOT-23-3)
Number of Terminals3
PolarityPch
Drain-Source Voltage (VDSS)-60V
Drain Current (ID) - Continuous-0.23A
Drain Current (ID) - Pulsed-0.52A
On-State Resistance (RDS(on)) at VGS = 4.5V3.5Ω
On-State Resistance (RDS(on)) at VGS = 10V2.8Ω
Power Dissipation (PD)0.35W
Gate Threshold Voltage (VGS(th))-0.8 to -2V
Storage Temperature Range-55 to 150°C
Package Size2.9x2.4 (t=1.2) mm

Key Features

  • Trench MOSFET technology for high cell density and low on-state resistance.
  • Very fast switching capabilities.
  • Low drive voltage of 4.5V.
  • ESD protection diode integrated into the package.
  • Rugged and reliable performance.

Applications

The BSS84T116 is particularly suited for low-voltage applications requiring a high-side switch. It is ideal for use in switching circuits, high-side load switches, and relay driver applications.

Q & A

  1. What is the drain-source voltage rating of the BSS84T116?
    The drain-source voltage rating is -60V.
  2. What is the continuous drain current rating of the BSS84T116?
    The continuous drain current rating is -0.23A.
  3. What is the typical on-state resistance at VGS = 4.5V?
    The typical on-state resistance at VGS = 4.5V is 3.5Ω.
  4. What is the power dissipation rating of the BSS84T116?
    The power dissipation rating is 0.35W.
  5. What is the gate threshold voltage range of the BSS84T116?
    The gate threshold voltage range is -0.8 to -2V.
  6. What is the storage temperature range for the BSS84T116?
    The storage temperature range is -55 to 150°C.
  7. What type of technology is used in the BSS84T116?
    The BSS84T116 uses trench MOSFET technology.
  8. Is the BSS84T116 suitable for automotive applications?
    For automotive usage, please contact the sales department.
  9. What is the package type of the BSS84T116?
    The package type is TO-236AB (SOT-23-3).
  10. What are some typical applications of the BSS84T116?
    Typical applications include switching circuits, high-side load switches, and relay driver applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SST3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
395

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

RB751V-40TE-17
RB751V-40TE-17
Rohm Semiconductor
DIODE SCHOTTKY 30V 30MA UMD2
BZX84C6V8LT116
BZX84C6V8LT116
Rohm Semiconductor
DIODE ZENER 6.8V 250MW SSD3
BZX84C24VLT116
BZX84C24VLT116
Rohm Semiconductor
DIODE ZENER 24V 250MW SSD3
BZX84B11VLT116
BZX84B11VLT116
Rohm Semiconductor
DIODE ZENER 11V 250MW SSD3
BZX84B6V2LT116
BZX84B6V2LT116
Rohm Semiconductor
DIODE ZENER 6.2V 250MW SSD3
BZX84B6V2LFHT116
BZX84B6V2LFHT116
Rohm Semiconductor
DIODE ZENER 6.2V 250MW SSD3
BCX17T116
BCX17T116
Rohm Semiconductor
TRANS PNP 45V 0.5A SST3
BSS138BKWT106
BSS138BKWT106
Rohm Semiconductor
NCH 60V 380MA, SOT-323, SMALL SI
LM324FV-GE2
LM324FV-GE2
Rohm Semiconductor
GROUND SENSE OPERATIONAL AMPLIFI
LM339FV-E2
LM339FV-E2
Rohm Semiconductor
LM339FV IS QUAD-CHANNEL GROUND S
LM2901F-E2
LM2901F-E2
Rohm Semiconductor
GROUND SENSE COMPARATOR : LM2901
BD6775EFV-E2
BD6775EFV-E2
Rohm Semiconductor
IC MTR DRV BIPLR 4.5-6V 24HTSSOP