BSS84T116
  • Share:

Rohm Semiconductor BSS84T116

Manufacturer No:
BSS84T116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 230MA SST3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84T116 is a P-channel enhancement mode field-effect transistor (MOSFET) produced by ROHM Semiconductor. This device is part of the industry's favorite SOT-23 package and is designed for low-voltage applications requiring high-side switching. It incorporates advanced trench MOSFET technology, ensuring fast switching and reliable performance.

Key Specifications

ParameterValueUnit
Package CodeTO-236AB (SOT-23-3)
Number of Terminals3
PolarityPch
Drain-Source Voltage (VDSS)-60V
Drain Current (ID) - Continuous-0.23A
Drain Current (ID) - Pulsed-0.52A
On-State Resistance (RDS(on)) at VGS = 4.5V3.5Ω
On-State Resistance (RDS(on)) at VGS = 10V2.8Ω
Power Dissipation (PD)0.35W
Gate Threshold Voltage (VGS(th))-0.8 to -2V
Storage Temperature Range-55 to 150°C
Package Size2.9x2.4 (t=1.2) mm

Key Features

  • Trench MOSFET technology for high cell density and low on-state resistance.
  • Very fast switching capabilities.
  • Low drive voltage of 4.5V.
  • ESD protection diode integrated into the package.
  • Rugged and reliable performance.

Applications

The BSS84T116 is particularly suited for low-voltage applications requiring a high-side switch. It is ideal for use in switching circuits, high-side load switches, and relay driver applications.

Q & A

  1. What is the drain-source voltage rating of the BSS84T116?
    The drain-source voltage rating is -60V.
  2. What is the continuous drain current rating of the BSS84T116?
    The continuous drain current rating is -0.23A.
  3. What is the typical on-state resistance at VGS = 4.5V?
    The typical on-state resistance at VGS = 4.5V is 3.5Ω.
  4. What is the power dissipation rating of the BSS84T116?
    The power dissipation rating is 0.35W.
  5. What is the gate threshold voltage range of the BSS84T116?
    The gate threshold voltage range is -0.8 to -2V.
  6. What is the storage temperature range for the BSS84T116?
    The storage temperature range is -55 to 150°C.
  7. What type of technology is used in the BSS84T116?
    The BSS84T116 uses trench MOSFET technology.
  8. Is the BSS84T116 suitable for automotive applications?
    For automotive usage, please contact the sales department.
  9. What is the package type of the BSS84T116?
    The package type is TO-236AB (SOT-23-3).
  10. What are some typical applications of the BSS84T116?
    Typical applications include switching circuits, high-side load switches, and relay driver applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SST3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
395

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK

Related Product By Brand

MMBZ5V6ALT116
MMBZ5V6ALT116
Rohm Semiconductor
TVS DIODE 3VWM 8VC SSD3
BAT54CHYT116
BAT54CHYT116
Rohm Semiconductor
30V, 200MA, SOT-23, CATHODE COMM
BAV199HYFHT116
BAV199HYFHT116
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,
BAS40-06HMFHT116
BAS40-06HMFHT116
Rohm Semiconductor
DIODE ARRAY SCHOT 40V 120MA SSD3
BAV99HMT116
BAV99HMT116
Rohm Semiconductor
PMDU RECTIFYING DIODE
BZX84B30VLYT116
BZX84B30VLYT116
Rohm Semiconductor
250MW, 30V, SOT-23, ZENER DIODE
BZX84C3V6LT116
BZX84C3V6LT116
Rohm Semiconductor
DIODE ZENER 3.6V 250MW SSD3
BZX84B16VLFHT116
BZX84B16VLFHT116
Rohm Semiconductor
DIODE ZENER 16V 250MW SSD3
BZX84B13VLFHT116
BZX84B13VLFHT116
Rohm Semiconductor
DIODE ZENER 13V 250MW SSD3
BZX84C33VLYFHT116
BZX84C33VLYFHT116
Rohm Semiconductor
250MW, 33V, SOT-23, AUTOMOTIVE Z
BZX84B6V8LFHT116
BZX84B6V8LFHT116
Rohm Semiconductor
DIODE ZENER 6.8V 250MW SSD3
BD14000EFV-CH2
BD14000EFV-CH2
Rohm Semiconductor
CELL BALANCE LSI OF 4 TO 6 SERIE