BSS84T116
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Rohm Semiconductor BSS84T116

Manufacturer No:
BSS84T116
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 230MA SST3
Delivery:
Payment:
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Product Introduction

Overview

The BSS84T116 is a P-channel enhancement mode field-effect transistor (MOSFET) produced by ROHM Semiconductor. This device is part of the industry's favorite SOT-23 package and is designed for low-voltage applications requiring high-side switching. It incorporates advanced trench MOSFET technology, ensuring fast switching and reliable performance.

Key Specifications

ParameterValueUnit
Package CodeTO-236AB (SOT-23-3)
Number of Terminals3
PolarityPch
Drain-Source Voltage (VDSS)-60V
Drain Current (ID) - Continuous-0.23A
Drain Current (ID) - Pulsed-0.52A
On-State Resistance (RDS(on)) at VGS = 4.5V3.5Ω
On-State Resistance (RDS(on)) at VGS = 10V2.8Ω
Power Dissipation (PD)0.35W
Gate Threshold Voltage (VGS(th))-0.8 to -2V
Storage Temperature Range-55 to 150°C
Package Size2.9x2.4 (t=1.2) mm

Key Features

  • Trench MOSFET technology for high cell density and low on-state resistance.
  • Very fast switching capabilities.
  • Low drive voltage of 4.5V.
  • ESD protection diode integrated into the package.
  • Rugged and reliable performance.

Applications

The BSS84T116 is particularly suited for low-voltage applications requiring a high-side switch. It is ideal for use in switching circuits, high-side load switches, and relay driver applications.

Q & A

  1. What is the drain-source voltage rating of the BSS84T116?
    The drain-source voltage rating is -60V.
  2. What is the continuous drain current rating of the BSS84T116?
    The continuous drain current rating is -0.23A.
  3. What is the typical on-state resistance at VGS = 4.5V?
    The typical on-state resistance at VGS = 4.5V is 3.5Ω.
  4. What is the power dissipation rating of the BSS84T116?
    The power dissipation rating is 0.35W.
  5. What is the gate threshold voltage range of the BSS84T116?
    The gate threshold voltage range is -0.8 to -2V.
  6. What is the storage temperature range for the BSS84T116?
    The storage temperature range is -55 to 150°C.
  7. What type of technology is used in the BSS84T116?
    The BSS84T116 uses trench MOSFET technology.
  8. Is the BSS84T116 suitable for automotive applications?
    For automotive usage, please contact the sales department.
  9. What is the package type of the BSS84T116?
    The package type is TO-236AB (SOT-23-3).
  10. What are some typical applications of the BSS84T116?
    Typical applications include switching circuits, high-side load switches, and relay driver applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:34 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SST3
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.44
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