Overview
The NE5550279A-T1A-A is a high-performance Silicon Power LDMOS FET (Laterally Diffused Metal Oxide Semiconductor Field-Effect Transistor) produced by Renesas Electronics America Inc. This device is designed for use in high-power radio frequency (RF) applications, particularly in the VHF to UHF frequency bands. It is known for its high output power, high power added efficiency, and high linear gain, making it suitable for various radio system applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Typical Value | Unit |
|---|---|---|---|---|
| Drain to Source Voltage | VDS | - | 7.5 | V |
| Gate to Source Voltage | VGS | - | 2.20 | V |
| Drain Current | IDS | - | 0.4 | A |
| Output Power | Pout | f = 460 MHz, VDS = 7.5 V, IDset = 40 mA, Pin = 15 dBm | 33.0 | dBm |
| Power Added Efficiency | ηadd | f = 460 MHz, VDS = 7.5 V, IDset = 40 mA, Pin = 15 dBm | 68% | % |
| Linear Gain | GL | f = 460 MHz, VDS = 7.5 V, IDset = 40 mA, Pin = 0 dBm | 22.5 | dB |
| Gate Threshold Voltage | Vth | VDS = 7.5 V, IDS = 1.0 mA | 1.65 | V |
| Drain to Source Breakdown Voltage | BVDSS | IDS = 10 μA | 38 | V |
| Transconductance | Gm | VDS = 7.5 V, IDS = 140±20 mA | 0.44 | S |
Key Features
- High Output Power: The NE5550279A-T1A-A offers high output power of 33.0 dBm typical at 460 MHz with VDS = 7.5 V and IDset = 40 mA.
- High Power Added Efficiency: It achieves a high power added efficiency of 68% typical under the same conditions.
- High Linear Gain: The device provides a high linear gain of 22.5 dB typical at 460 MHz with VDS = 7.5 V and IDset = 40 mA.
- High ESD Tolerance: It has high electrostatic discharge (ESD) tolerance, enhancing its reliability in various applications.
- Suitable for VHF to UHF-Band Class-AB Power Amplifier: The NE5550279A-T1A-A is specifically designed for use in VHF to UHF-band Class-AB power amplifier applications.
Applications
- 150 MHz Band Radio System: Suitable for radio systems operating in the 150 MHz frequency band.
- 460 MHz Band Radio System: Ideal for radio systems operating in the 460 MHz frequency band.
- 900 MHz Band Radio System: Also suitable for radio systems operating in the 900 MHz frequency band.
Q & A
- What is the typical output power of the NE5550279A-T1A-A at 460 MHz?
The typical output power is 33.0 dBm at 460 MHz with VDS = 7.5 V and IDset = 40 mA.
- What is the power added efficiency of the NE5550279A-T1A-A?
The power added efficiency is 68% typical at 460 MHz with VDS = 7.5 V and IDset = 40 mA.
- What is the linear gain of the NE5550279A-T1A-A?
The linear gain is 22.5 dB typical at 460 MHz with VDS = 7.5 V and IDset = 40 mA.
- What is the maximum drain to source voltage (VDS) for the NE5550279A-T1A-A?
The maximum drain to source voltage (VDS) is 30 V.
- What is the maximum gate to source voltage (VGS) for the NE5550279A-T1A-A?
The maximum gate to source voltage (VGS) is 6.0 V.
- What are the recommended operating conditions for the NE5550279A-T1A-A?
The recommended operating conditions include VDS = 7.5 V, VGS = 1.65 to 2.85 V, and IDS = 0.4 A.
- What are the typical applications of the NE5550279A-T1A-A?
The device is suitable for 150 MHz, 460 MHz, and 900 MHz band radio systems.
- What is the package type for the NE5550279A-T1A-A?
The device is available in a 79A package with 12 mm wide embossed taping.
- How should the NE5550279A-T1A-A be soldered?
The device should be soldered under recommended conditions, including infrared reflow, wave soldering, and partial heating, with specific temperature and time limits.
- What precautions should be taken when handling the NE5550279A-T1A-A?
The device is sensitive to electrostatic discharge (ESD), so proper precautions should be observed when handling it.
